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High linearity GaN HEMT power amplifier with pre-linearization gate diode
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.223-228
2004
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GaN MOS-HEMT using atomic layer deposition Al/sub 2/O/sub 3/ as gate dielectric and surface passivation
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.167-172
2004
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Selective dry etching of GaN over AlGaN in BCl/sub 3//SF/sub 6/ mixtures
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.132-137
2004
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Unstrained InAlN/GaN HEMT structure
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.161-166
2004
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Fabrication of self-aligned T-gate AlGaN/GaN high electron mobility transistors
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.181-185
2004
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Dependence of RF performance of GaN/AlGaN HEMTs upon AlGaN barrier layer variation
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.126-131
2004
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Trap behavior in AlGaN/GaN HEMTs by post-gate-annealing
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.145-150
2004
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Analysis of high DC current gain structures for GaN/InGaN/GaN HBTs
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.201-206
2004
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Stable high power GaN-on-GaN HEMT
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.114-120
2004
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A new field-plated GaN HEMT structure with improved power and noise performance
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.186-191
2004
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MBE-grown AlGaN/GaN HEMTs on SiC
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.108-113
2004
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Temperature dependent I-V characteristics of AlGaN/GaN HBTs and GaN BJTs
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.195-200
2004
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Low frequency noise parameters in an AlGaN/GaN heterostructure with 33% and 75% Al mole fraction
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.138-144
2004
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SPICE model of AlGaN/GaN HEMTs and simulation of VCO and power amplifier
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.229-235
2004
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Lifetime of nonequilibrium carriers in AlGaN epilayers with high Al molar fraction
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.72-77
2004
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