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Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

physica status solidi (b), 2020-12, Vol.257 (12), p.n/a

2020

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Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5GHz

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16)

2023

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Control of Metal‐Rich Growth for GaN/AlN Superlattice Fabrication on Face‐to‐Face‐Annealed Sputter‐Deposited AlN Templates

physica status solidi (b), 2023-09, Vol.260 (9)

2023

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A millimeter‐wave scalable small‐signal modeling approach based on FW‐EM for AlGaN/GaN HEMT up to 110GHz

Microwave and optical technology letters, 2021-08, Vol.63 (8), p.2145-2152

2021

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Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

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Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5GHz

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16)

2023

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High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing

Small (Weinheim an der Bergstrasse, Germany), 2022-09, Vol.18 (37), p.e2107301-n/a

2022

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High‐Power AlGaN‐Based Ultrathin Tunneling Junction Deep Ultraviolet Light‐Emitting Diodes

Laser & photonics reviews, 2024-01, Vol.18 (1), p.n/a

2024

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Demonstration of Weak Polarization Electric Field III‐N LEDs based on Polar Plane

Laser & photonics reviews, 2023-10, Vol.17 (10)

2023

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Electrothermal Performance of AlGaN/GaN Lateral Transistors with >10μm Thick GaN Buffer on 200mm Diameter‐Engineered Substrates

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16)

2023

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Measurements of Solar Ultraviolet Radiation Exposure at Work and at Leisure in Danish Workers

Photochemistry and photobiology, 2018-07, Vol.94 (4), p.807-814

2018

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AlGaN‐Based Solar‐Blind Ultraviolet Detector with a Response Wavelength of 217nm

Physica status solidi. A, Applications and materials science, 2023-10, Vol.220 (20)

2023

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Influence of Mg Out‐Diffusion Effect on the Threshold Voltage of GaN‐Based p‐Channel Heterostructure Field‐Effect Transistors

physica status solidi (b), 2023-05, Vol.260 (5), p.n/a

2023

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LG 55nm T‐gate InGaN/GaN channel based high electron mobility transistors for stable transconductance operation

International journal of RF and microwave computer-aided engineering, 2022-10, Vol.32 (10)

2022

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Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells

physica status solidi (b), 2022-06, Vol.259 (6), p.n/a

2022

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A Modeling Study of Electron Transport in GaN/AlGaN Superlattices Using Monte Carlo Simulation

physica status solidi (b), 2024-02, Vol.261 (2), p.n/a

2024

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Design and optimization of GaN‐based betavoltaic cell for enhanced output power density

International journal of energy research, 2021-01, Vol.45 (1), p.799-806

2021

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Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH>5V and On‐Current >0.5Amm−1

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7)

2020

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About 335nm Ultraviolet Emissions Obtained from Simple Metal–Insulator–Semiconductor Light‐Emitting Tunnel Diodes

Physica status solidi. A, Applications and materials science, 2021-01, Vol.218 (2)

2021

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P‐11.7: Optimizing Chip Sidewall Inclined Angle and Thickness for Enhanced Light Extraction Efficiency in AlGaN‐based Deep Ultraviolet Micro‐LEDs

SID International Symposium Digest of technical papers, 2024-04, Vol.55 (S1), p.1309-1311

2024

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Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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Surface Morphology Evolution of AlGaN Microhoneycomb Structures during Epitaxial Overgrowth

physica status solidi (b), 2024-03, Vol.261 (3), p.n/a

2024

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Suppression of Iron Memory Effect in GaN Epitaxial Layers

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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An ambient temperature dependent small signal model of GaN HEMT using method of curve fitting

International journal of RF and microwave computer-aided engineering, 2020-12, Vol.30 (12), p.n/a

2020

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Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5GHz

Control of Metal‐Rich Growth for GaN/AlN Superlattice Fabrication on Face‐to‐Face‐Annealed Sputter‐Deposited AlN Templates

A millimeter‐wave scalable small‐signal modeling approach based on FW‐EM for AlGaN/GaN HEMT up to 110GHz

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5GHz

High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing

High‐Power AlGaN‐Based Ultrathin Tunneling Junction Deep Ultraviolet Light‐Emitting Diodes

Demonstration of Weak Polarization Electric Field III‐N LEDs based on Polar Plane

Electrothermal Performance of AlGaN/GaN Lateral Transistors with >10μm Thick GaN Buffer on 200mm Diameter‐Engineered Substrates

Measurements of Solar Ultraviolet Radiation Exposure at Work and at Leisure in Danish Workers

AlGaN‐Based Solar‐Blind Ultraviolet Detector with a Response Wavelength of 217nm

Influence of Mg Out‐Diffusion Effect on the Threshold Voltage of GaN‐Based p‐Channel Heterostructure Field‐Effect Transistors

LG 55nm T‐gate InGaN/GaN channel based high electron mobility transistors for stable transconductance operation

Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells

A Modeling Study of Electron Transport in GaN/AlGaN Superlattices Using Monte Carlo Simulation

Design and optimization of GaN‐based betavoltaic cell for enhanced output power density

Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH>5V and On‐Current >0.5Amm−1

About 335nm Ultraviolet Emissions Obtained from Simple Metal–Insulator–Semiconductor Light‐Emitting Tunnel Diodes

P‐11.7: Optimizing Chip Sidewall Inclined Angle and Thickness for Enhanced Light Extraction Efficiency in AlGaN‐based Deep Ultraviolet Micro‐LEDs

Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing

Surface Morphology Evolution of AlGaN Microhoneycomb Structures during Epitaxial Overgrowth

Suppression of Iron Memory Effect in GaN Epitaxial Layers

An ambient temperature dependent small signal model of GaN HEMT using method of curve fitting

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