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Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers

Journal of modern optics, 2020-05, Vol.67 (9), p.837-842

2020

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Atomic simulation of AlGaN film deposition on AlN template

Molecular physics, 2020-07, Vol.118 (14), p.e1702728

2020

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Large Kerr coefficient induced by THz driven to intersubband of a GaN/AlGaN asymmetric quantum well nanostructure

Journal of modern optics, 2015-04, Vol.62 (7), p.569-575

2015

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Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

Radiation effects and defects in solids, 2015-05, Vol.170 (5), p.377-385

2015

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Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors

Radiation effects and defects in solids, 2017-04, Vol.172 (3-4), p.250-256

2017

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Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron-mobility transistors

Radiation effects and defects in solids, 2016-03, Vol.171 (3-4), p.223-230

2016

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Ion-beam-treated strained AlGaN/GaN multi-quantum wells: HAADF-STEM, HRTEM, Raman and HRXRD characterizations

Radiation effects and defects in solids, 2012-08, Vol.167 (8), p.612-620

2012

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Strain modification of AlGaN layers using swift heavy ions

Radiation effects and defects in solids, 2011-11, Vol.166 (11), p.843-850

2011

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Molecular dynamics simulations of AlN deposition on GaN substrate

Molecular physics, 2019-07, Vol.117 (13), p.1758-1767

2019

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The interaction between ethionamide and pristine, Si-, Ga-, and Al-doped boron nitride nanoflakes: A computational study

Journal of sulfur chemistry, 2022-01, Vol.43 (1), p.78-94

2022

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Modulation of electronic structure properties of C/B/Al-doped armchair GaN nanoribbons

Molecular physics, 2020-04, Vol.118 (7), p.e1656833

2020

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Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications

International journal of electronics letters, 2020-10, Vol.8 (4), p.472-482

2020

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Pressure-induced non-linear optical properties in a wurtzite GaN/Al sub(x)Ga sub(1-x)N strained quantum dot

Phase transitions, 2013-08, Vol.86 (8), p.824-837

2013

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On the interface states and series resistance profiles of (Ni/Au)-Al0.22Ga0.78N/AlN/GaN heterostructures before and after 60Co (γ-ray) irradiation

Radiation effects and defects in solids, 2010-12, Vol.165 (12), p.920-929

2010

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Single Source Precursors to Group III (13) Metal Nitrides

Comments on modern chemistry. Part A, Comments on inorganic chemistry, 1995-03, Vol.17 (2), p.79-94

1995

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Self-Nucleated Thin Films of GaN and Al x Ga1−x N for Optoelectronic Devices: Structure and Morphology

Comments on modern chemistry. Part A, Comments on inorganic chemistry, 1996-07, Vol.18 (5-6), p.325-341

1996

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Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers

Atomic simulation of AlGaN film deposition on AlN template

Large Kerr coefficient induced by THz driven to intersubband of a GaN/AlGaN asymmetric quantum well nanostructure

Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors

Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron-mobility transistors

Ion-beam-treated strained AlGaN/GaN multi-quantum wells: HAADF-STEM, HRTEM, Raman and HRXRD characterizations

Strain modification of AlGaN layers using swift heavy ions

Molecular dynamics simulations of AlN deposition on GaN substrate

The interaction between ethionamide and pristine, Si-, Ga-, and Al-doped boron nitride nanoflakes: A computational study

Modulation of electronic structure properties of C/B/Al-doped armchair GaN nanoribbons

Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications

Pressure-induced non-linear optical properties in a wurtzite GaN/Al sub(x)Ga sub(1-x)N strained quantum dot

On the interface states and series resistance profiles of (Ni/Au)-Al0.22Ga0.78N/AlN/GaN heterostructures before and after 60Co (γ-ray) irradiation

Single Source Precursors to Group III (13) Metal Nitrides

Self-Nucleated Thin Films of GaN and Al x Ga1−x N for Optoelectronic Devices: Structure and Morphology

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