UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 130

Sortiert nach

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

Materials, 2022-05, Vol.15 (11), p.3818

2022

Link zum Volltext

Verfügbarkeit prüfen

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Energies (Basel), 2023-04, Vol.16 (7), p.2978

2023

Link zum Volltext

Verfügbarkeit prüfen

Thermal Characterization and Modelling of AlGaN-GaN Multilayer Structures for HEMT Applications

Energies (Basel), 2020-05, Vol.13 (9), p.2363

2020

Link zum Volltext

Verfügbarkeit prüfen

Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Micromachines (Basel), 2019-07, Vol.10 (8), p.492

2019

Link zum Volltext

Verfügbarkeit prüfen

Unipolar Arc Ignited Partial Discharge for 650-V AlGaN/GaN HEMTs during the DC Breakdown Voltage Measurement

Energies (Basel), 2022-10, Vol.15 (20), p.7608

2022

Link zum Volltext

Verfügbarkeit prüfen

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Micromachines (Basel), 2022-12, Vol.13 (12), p.2133

2022

Link zum Volltext

Verfügbarkeit prüfen

Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers

Journal of modern optics, 2020-05, Vol.67 (9), p.837-842

2020

Link zum Volltext

Verfügbarkeit prüfen

High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Energies (Basel), 2021-10, Vol.14 (19), p.6098

2021

Link zum Volltext

Verfügbarkeit prüfen

Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

Materials, 2019-08, Vol.12 (17), p.2760

2019

Link zum Volltext

Verfügbarkeit prüfen

Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps

CrystEngComm, 2019, Vol.21 (33), p.4864-4873

2019

Link zum Volltext

Verfügbarkeit prüfen

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Micromachines (Basel), 2022-07, Vol.13 (7), p.1096

2022

Link zum Volltext

Verfügbarkeit prüfen

A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability

Micromachines (Basel), 2022-02, Vol.13 (2), p.299

2022

Link zum Volltext

Verfügbarkeit prüfen

Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs

Micromachines (Basel), 2019-05, Vol.10 (5), p.322

2019

Link zum Volltext

Verfügbarkeit prüfen

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

Micromachines (Basel), 2023-01, Vol.14 (2), p.291

2023

Link zum Volltext

Verfügbarkeit prüfen

Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

Micromachines (Basel), 2023-05, Vol.14 (6), p.1101

2023

Link zum Volltext

Verfügbarkeit prüfen

Optimization AlGaN/GaN HEMT with Field Plate Structures

Micromachines (Basel), 2022-04, Vol.13 (5), p.702

2022

Link zum Volltext

Verfügbarkeit prüfen

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

Micromachines (Basel), 2022-09, Vol.13 (9), p.1486

2022

Link zum Volltext

Verfügbarkeit prüfen

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs

Micromachines (Basel), 2022-12, Vol.14 (1), p.79

2022

Link zum Volltext

Verfügbarkeit prüfen

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

Electronics (Basel), 2021-12, Vol.10 (24), p.3096

2021

Link zum Volltext

Verfügbarkeit prüfen

Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

Micromachines (Basel), 2022-05, Vol.13 (5), p.807

2022

Link zum Volltext

Verfügbarkeit prüfen

Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

Micromachines (Basel), 2022-01, Vol.13 (1), p.84

2022

Link zum Volltext

Verfügbarkeit prüfen

Simulation Optimization of AlGaN/GaN SBD with Field Plate Structures and Recessed Anode

Micromachines (Basel), 2023-05, Vol.14 (6), p.1121

2023

Link zum Volltext

Verfügbarkeit prüfen

Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma

Coatings (Basel), 2021-03, Vol.11 (3), p.268

2021

Link zum Volltext

Verfügbarkeit prüfen

Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature

Micromachines (Basel), 2021-05, Vol.12 (5), p.537

2021

Link zum Volltext

Verfügbarkeit prüfen

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

Micromachines (Basel), 2022-05, Vol.13 (5), p.748

2022

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 130

Suche als RSS-Feed

Aktive Filter

Zeitschrift / SerieIeee Electron Device Letters

ThemaEngineering

ThemaMaterials Science

KollektionIngentaConnect Journals

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(129)
Mit Volltextzugriff
(130)

Publikationsform

Artikel
(130)

Sprache

Erscheinungsjahr

n.n

Thema

Aluminum Gallium Nitrides
(102)
Gallium Nitrides
(102)
Science & Technology
(87)
Physical Sciences
(76)
Technology
(69)
High Electron Mobility Transistors
(67)
Physics
(67)
Chemistry
(66)
Science & Technology - Other Topics
(61)
Chemistry, Analytical
(58)
Instruments & Instrumentation
(58)
Nanoscience & Nanotechnology
(57)
Physics, Applied
(55)
Semiconductor Devices
(50)
Transistors
(44)
Simulation
(35)
Organic Chemicals
(31)
Electric Fields
(26)
Voltage
(21)
Chemical Vapor Deposition
(20)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Micromachines
(68)
Energies
(6)
Radiation Effects And Defects In Solids
(6)
Aip Advances
(4)
Materials
(4)
Coatings
(3)
Advances In Electrical And Electronic Engineering
(2)
Biosensors
(2)
Electronics
(2)
Journal Of Modern Optics
(2)

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Thermal Characterization and Modelling of AlGaN-GaN Multilayer Structures for HEMT Applications

Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Unipolar Arc Ignited Partial Discharge for 650-V AlGaN/GaN HEMTs during the DC Breakdown Voltage Measurement

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers

High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability

Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

Optimization AlGaN/GaN HEMT with Field Plate Structures

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

Simulation Optimization of AlGaN/GaN SBD with Field Plate Structures and Recessed Anode

Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma

Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

Aktive Filter

Suchergebnisse filtern