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Enhancing the sensitivity of the reference electrode free AlGaN/GaN HEMT based pH sensors by controlling the threshold voltage

Sensors and actuators. B, Chemical, 2020-03, Vol.306, p.127609, Article 127609

2020

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Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

Sensors and actuators. B, Chemical, 2020-04, Vol.309, p.127832, Article 127832

2020

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Carbon monoxide detection down to ppb-level realized by O2 plasma treated TiO2-gated AlGaN/GaN HEMT sensor

Sensors and actuators. B, Chemical, 2022-05, Vol.359, p.131556, Article 131556

2022

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Hydrogen sensitive Schottky diode using semipolar (1 1 2¯ 2) AlGaN/GaN heterostructures

Sensors and actuators. B, Chemical, 2016-01, Vol.222, p.43-47

2016

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AlGaN/GaN heterostructure pH sensor with multi-sensing segments

Sensors and actuators. B, Chemical, 2018-05, Vol.260, p.134-139

2018

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AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer

Sensors and actuators. B, Chemical, 2020-08, Vol.317, p.128234, Article 128234

2020

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Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers

Optics and laser technology, 2022-08, Vol.152, p.108156, Article 108156

2022

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Hydrogen sensing properties of a novel GaN/AlGaN Schottky diode decorated with palladium nanoparticles and a platinum thin film

Sensors and actuators. B, Chemical, 2021-03, Vol.330, p.129339, Article 129339

2021

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AlGaN/GaN heterojunction hydrogen sensor using ZnO-nanoparticles/Pd dual catalyst layer

Sensors and actuators. B, Chemical, 2020-12, Vol.325, p.128946, Article 128946

2020

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Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer

Journal of crystal growth, 2020-04, Vol.536, p.125575, Article 125575

2020

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Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3

Physica. B, Condensed matter, 2020-02, Vol.579, p.411810, Article 411810

2020

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Hydrogen sensing properties of a GaN/AlGaN-based Schottky diode with a catalytic platinum (Pt) hybrid structure

Sensors and actuators. B, Chemical, 2021-03, Vol.331, p.129320, Article 129320

2021

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Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors

Sensors and actuators. B, Chemical, 2019-05, Vol.287, p.250-257

2019

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All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors

Solid-state electronics, 2020-02, Vol.164, p.107696, Article 107696

2020

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Application of a gateless AlGaN/GaN HEMT sensor for diesel soot particulate detection

Sensors and actuators. B, Chemical, 2021-12, Vol.349, p.130811, Article 130811

2021

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pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption

Journal of colloid and interface science, 2021-02, Vol.583, p.331-339

2021

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Strain relaxation process of undoped and Si-doped semipolar AlxGa1−xN grown on (202¯1) bulk GaN substrate

Journal of crystal growth, 2020-03, Vol.533, p.125467, Article 125467

2020

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Effect of V/III ratio on the growth of (112¯2) AlGaN by metalorganic vapour phase epitaxy

Journal of crystal growth, 2016-02, Vol.435, p.12-18

2016

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Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Sensors and actuators. B, Chemical, 2018-11, Vol.274, p.636-644

2018

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Al^sub 2^O^sub 3^/AlN/Al-based backside diffuse reflector for high-brightness 370-nm AlGaN ultraviolet light-emitting diodes

Journal of alloys and compounds, 2019-03, Vol.776, p.1009

2019

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Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition

Physica. B, Condensed matter, 2019-10, Vol.571, p.210-212

2019

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Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation

Journal of crystal growth, 2017-06, Vol.468, p.536-540

2017

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Self-rectifying resistive switching behavior observed in Al^sub 2^O^sub 3^-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode

Journal of alloys and compounds, 2018-04, Vol.742, p.822

2018

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High mobility AlGaN/GaN devices for beta super(-)-dosimetry

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2016-05, Vol.819, p.14-19

2016

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Optical anisotropy modulation in nonpolar a-plane AlGaN by manipulating the anisotropic in-plane strains through SiN^sub x^ interlayers engineering

Journal of alloys and compounds, 2018-04, Vol.743, p.294

2018

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Enhancing the sensitivity of the reference electrode free AlGaN/GaN HEMT based pH sensors by controlling the threshold voltage

Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

Carbon monoxide detection down to ppb-level realized by O2 plasma treated TiO2-gated AlGaN/GaN HEMT sensor

Hydrogen sensitive Schottky diode using semipolar (1 1 2¯ 2) AlGaN/GaN heterostructures

AlGaN/GaN heterostructure pH sensor with multi-sensing segments

AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer

Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers

Hydrogen sensing properties of a novel GaN/AlGaN Schottky diode decorated with palladium nanoparticles and a platinum thin film

AlGaN/GaN heterojunction hydrogen sensor using ZnO-nanoparticles/Pd dual catalyst layer

Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer

Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3

Hydrogen sensing properties of a GaN/AlGaN-based Schottky diode with a catalytic platinum (Pt) hybrid structure

Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors

All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors

Application of a gateless AlGaN/GaN HEMT sensor for diesel soot particulate detection

pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption

Strain relaxation process of undoped and Si-doped semipolar AlxGa1−xN grown on (202¯1) bulk GaN substrate

Effect of V/III ratio on the growth of (112¯2) AlGaN by metalorganic vapour phase epitaxy

Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Al^sub 2^O^sub 3^/AlN/Al-based backside diffuse reflector for high-brightness 370-nm AlGaN ultraviolet light-emitting diodes

Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition

Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation

Self-rectifying resistive switching behavior observed in Al^sub 2^O^sub 3^-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode

High mobility AlGaN/GaN devices for beta super(-)-dosimetry

Optical anisotropy modulation in nonpolar a-plane AlGaN by manipulating the anisotropic in-plane strains through SiN^sub x^ interlayers engineering

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