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Corrections to "Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs"

IEEE access, 2024, Vol.12, p.150485-150485

2024

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

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AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.981-987

2024

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A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

Journal of the Korean Physical Society, 2019, 74(4), , pp.349-357

2019

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Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.931-935

2019

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Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.716-716

2020

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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines (Basel), 2024-01, Vol.15 (1), p.81

2024

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High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.481-484

2020

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High Figure-of-Merit ( }^} / } ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.1179-1186

2018

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Effect of gamma irradiation on GaN lateral Schottky barrier diodes

Journal of physics. Conference series, 2022-11, Vol.2370 (1), p.12014

2022

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Strain-controlled power devices as inspired by human reflex

Nature communications, 2020-01, Vol.11 (1), p.326-326, Article 326

2020

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The modulation of characteristics in AlGaN/GaN High electron mobility transistors (HEMTs) using multiple field plate technology

Journal of physics. Conference series, 2024-08, Vol.2819 (1), p.012014

2024

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Stepped ohmic structure of AlGaN/GaN HEMT with lower off-state leakage current

Journal of physics. Conference series, 2024-07, Vol.2807 (1), p.12015

2024

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Evaluation of p-GaN HEMTs degradation under high temperatures forward and reverse gate bias stress

Journal of physics. Conference series, 2023-11, Vol.2645 (1), p.12016

2023

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Alloying enhanced negative Poisson's ratio in two-dimensional aluminum gallium nitride (AlGaN)

Physical chemistry chemical physics : PCCP, 2024-02, Vol.26 (8), p.71-719

2024

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Retracted: Improvement and Reduction of Self-Heating Effect in AlGaN/GaN HEMT Devices

Journal of sensors, 2024-01, Vol.2024, p.1-1

Sensors, Journal of

2024

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Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

RSC advances, 2024-07, Vol.14 (31), p.22238-22243

2024

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Broadband ultraviolet plasmonic enhanced AlGaN/GaN heterojunction photodetectors with close-packed Al nanoparticle arrays

Physical chemistry chemical physics : PCCP, 2023-08, Vol.25 (34), p.22794-2283

2023

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Optoelectronic synapses with chemical-electric behaviors in gallium nitride semiconductors for biorealistic neuromorphic functionality

Nature communications, 2024-09, Vol.15 (1), p.7671-12, Article 7671

2024

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Investigation of AlGaN/GaN HEMT trap barrier height variation under mechanical stress and voltage stress

Journal of physics. Conference series, 2024-07, Vol.2810 (1), p.12006

2024

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k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

Nature communications, 2018-07, Vol.9 (1), p.2653-9, Article 2653

2018

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Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters

Nature communications, 2024-10, Vol.15 (1), p.9398-9, Article 9398

2024

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Publisher’s Note: “3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond” [AIP Adv. 9, 125106 (2019)]

AIP advances, 2020-02, Vol.10 (2), p.029902-029902-1

2020

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AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer

CrystEngComm, 2024-07, Vol.26 (26), p.3475-3482

2024

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Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3

RSC advances, 2017-01, Vol.7 (19), p.11745-11751

2017

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Corrections to "Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs"

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

High Figure-of-Merit ( }^} / } ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

Effect of gamma irradiation on GaN lateral Schottky barrier diodes

Strain-controlled power devices as inspired by human reflex

The modulation of characteristics in AlGaN/GaN High electron mobility transistors (HEMTs) using multiple field plate technology

Stepped ohmic structure of AlGaN/GaN HEMT with lower off-state leakage current

Evaluation of p-GaN HEMTs degradation under high temperatures forward and reverse gate bias stress

Alloying enhanced negative Poisson's ratio in two-dimensional aluminum gallium nitride (AlGaN)

Retracted: Improvement and Reduction of Self-Heating Effect in AlGaN/GaN HEMT Devices

Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

Broadband ultraviolet plasmonic enhanced AlGaN/GaN heterojunction photodetectors with close-packed Al nanoparticle arrays

Optoelectronic synapses with chemical-electric behaviors in gallium nitride semiconductors for biorealistic neuromorphic functionality

Investigation of AlGaN/GaN HEMT trap barrier height variation under mechanical stress and voltage stress

k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters

Publisher’s Note: “3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond” [AIP Adv. 9, 125106 (2019)]

AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer

Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3

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