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Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm

IEEE journal of quantum electronics, 2021-04, Vol.57 (2), p.1-6

2021

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Simulation of AlGaN/GaN MISFET With 3.6-GW/cm2 High FOM by SIPOS Field Plates Electric Field Modulation

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.429-434

2023

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Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

physica status solidi (b), 2020-12, Vol.257 (12), p.n/a

2020

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0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

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A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

Journal of the Korean Physical Society, 2019, 74(4), , pp.349-357

2019

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Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.71-74

2016

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AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

IEEE journal of quantum electronics, 2017-02, Vol.53 (1), p.1-6

2017

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AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

Japanese Journal of Applied Physics, 2023-08, Vol.62 (SK), p.SK1013

2023

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Progress on pure AlGaN based UVB LEDs and Our Approach Toward Deep-Ultraviolet (DUV) LDs

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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Comparison for 1/ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3634-3638

2017

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The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Nature photonics, 2019-04, Vol.13 (4), p.233-244

2019

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AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.455-458

2016

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Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)]

Applied physics letters, 2022-05, Vol.120 (19)

2022

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Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

Nature photonics, 2016-09, Vol.10 (9), p.595-599

2016

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GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015, p.1-4

2015

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150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

Applied physics letters, 2017-04, Vol.110 (14)

2017

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Synthesis and Applications of III–V Nanowires

Chemical reviews, 2019-08, Vol.119 (15), p.9170-9220

2019

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GaN/NbN epitaxial semiconductor/superconductor heterostructures

Nature (London), 2018-03, Vol.555 (7695), p.183-189

2018

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Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.103-106

2016

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Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation

Journal of applied physics, 2013-10, Vol.114 (14)

2013

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High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

2015 73rd Annual Device Research Conference (DRC), 2015, p.31-32

2015

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Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100209-1-100209-10

2014

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Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm

Simulation of AlGaN/GaN MISFET With 3.6-GW/cm2 High FOM by SIPOS Field Plates Electric Field Modulation

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer

A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

Progress on pure AlGaN based UVB LEDs and Our Approach Toward Deep-Ultraviolet (DUV) LDs

Comparison for 1/ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)]

Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

GaN-based power devices: Physics, reliability, and perspectives

Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy

150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

Synthesis and Applications of III–V Nanowires

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation

High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

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