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0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

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Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.71-74

2016

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IEEE_Xplore

AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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IEEE_Xplore

Progress on pure AlGaN based UVB LEDs and Our Approach Toward Deep-Ultraviolet (DUV) LDs

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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IEEE_Xplore

Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.23-26

2016

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IEEE_Xplore

AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.455-458

2016

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IEEE_Xplore

Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015, p.1-4

2015

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IEEE_Xplore

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.103-106

2016

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IEEE_Xplore

High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

2015 73rd Annual Device Research Conference (DRC), 2015, p.31-32

2015

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IEEE_Xplore

Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184), 2020, p.137-142

2020

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Hexagonal boron nitride for deep UV photonics

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.133-134

2015

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IEEE_Xplore

AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.91-94

2016

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IEEE_Xplore

Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics

2016 74th Annual Device Research Conference (DRC), 2016, p.1-2

2016

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DC and RF characterizations of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric

2016 74th Annual Device Research Conference (DRC), 2016, p.1-2

2016

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Advantages and limitations of UV optoelectronics on AlN substrates

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.135-136

2015

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IEEE_Xplore

350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.121-122

2015

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IEEE_Xplore

Recent progress of AlGaN Deep-UV LED by improving light-extraction efficiency

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.11-12

2015

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IEEE_Xplore

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

Proceedings of the 2015 International Conference on Microelectronic Test Structures, 2015, p.163-168

2015

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IEEE_Xplore

Quasi-pseudomorphic AlGaN based deep ultraviolet LEDs over sapphire substrates

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.5-6

2015

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IEEE_Xplore

UV LED performance and applications

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.8-8

Shatalov, Max

2015

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IEEE_Xplore

MP8 (contributed) 5:30 PM-5:30 PM

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.108-108

2015

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IEEE_Xplore

Impact of integrated photonic-ohmic drain on static and dynamic characteristics of GaN-on-Si heterojunction power transistors

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.31-34

2016

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IEEE_Xplore

AlGaN nanowire ultraviolet lasers on Si

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.127-128

2015

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IEEE_Xplore

Optimum design of 60WAlGaN/GaN Broadband RF Amplifier for S-Band Operation

2022 International Symposium on Electronics and Smart Devices (ISESD), 2022, p.1-4

2022

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Enhancement of thermionic emission and conversion characteristics using polarization- and band-engineered n-type AlGaN cathodes

2021 34th International Vacuum Nanoelectronics Conference (IVNC), 2021, p.1-2

2021

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0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer

Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

Progress on pure AlGaN based UVB LEDs and Our Approach Toward Deep-Ultraviolet (DUV) LDs

Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

Hexagonal boron nitride for deep UV photonics

AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics

DC and RF characterizations of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric

Advantages and limitations of UV optoelectronics on AlN substrates

350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates

Recent progress of AlGaN Deep-UV LED by improving light-extraction efficiency

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

Quasi-pseudomorphic AlGaN based deep ultraviolet LEDs over sapphire substrates

UV LED performance and applications

MP8 (contributed) 5:30 PM-5:30 PM

Impact of integrated photonic-ohmic drain on static and dynamic characteristics of GaN-on-Si heterojunction power transistors

AlGaN nanowire ultraviolet lasers on Si

Optimum design of 60WAlGaN/GaN Broadband RF Amplifier for S-Band Operation

Enhancement of thermionic emission and conversion characteristics using polarization- and band-engineered n-type AlGaN cathodes

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