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Incorporation of hemp flour to obtain gluten-free noodles of higher nutritional quality

Agriscientia (Córdoba), 2024-01, Vol.40 (2), p.1-6

2024

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Etching of InP-based MQW laser structure in a MOCVD reactor by chlorinated compounds

Journal of crystal growth, 1998-12, Vol.195 (1), p.624-629

1998

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Atomic layer epitaxy of InP

Journal of electronic materials, 1992-03, Vol.21 (3), p.265-268

BERTONE, D

1992

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Low-cost 1.55-μm InGaAsP-InP spot size converted (SSC) laser with conventional active layers

IEEE photonics technology letters, 1997-08, Vol.9 (8), p.1084-1086

1997

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Selective Growth of Semi‐insulating InP around Masked Nonplanar Structures Using Low‐Pressure Pulsed Metallorganic Epitaxy

Journal of the Electrochemical Society, 1999-03, Vol.146 (3), p.1167-1171

1999

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Eaves Structures on (100) InP and InP/InGaAsP/InP Heterostructures

Journal of the Electrochemical Society, 1997-11, Vol.144 (11), p.3940-3945

1997

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Repetition rate, using a mode-locked hybrid distributed Bragg reflector (ML-HDBR) laser source

IEEE photonics technology letters, 2000-03, Vol.12 (3), p.245-247

2000

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1.55-μm InGaAsP-InP spot-size-converted (SSC) laser with simple technological process

IEEE photonics technology letters, 1998-06, Vol.10 (6), p.775-777

1998

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MOCVD regrowth of semi-insulating InP and p-n junction blocking layers around laser active stripes

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.715-718

1997

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Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-pérot lasers, operating at 10-Gb/s, up to 110 °C, with constant current swing

Journal of lightwave technology, 2006, Vol.24 (1), p.143-149

2006

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Transition from island to continuous InP layer growth on (001) GaAs by MOCVD

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.214-218

1994

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Electron Microscopy and X‐Ray Diffraction Characterization of InP / GaAs Grown by Atomic Layer Epitaxy

Journal of the Electrochemical Society, 1993-06, Vol.140 (6), p.1776-1779

1993

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Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge Fabry-Perot lasers, operating at 10-gb/s, up to 110 deg C, with constant current swing

Journal of lightwave technology, 2006-01, Vol.24 (1), p.143-149

2006

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Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-Perot lasers, operating at 10-gb/s, up to 110/spl deg/C, with constant current swing

Journal of lightwave technology, 2006-01, Vol.24 (1), p.143-149

2006

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Percutaneous reactions and tuberculin allergometry

Bollettino dell'Istituto sieroterapico milanese, 1952-03, Vol.31 (3-4), p.140

BERTONE, D

1952

Volltextzugriff (PDF)

MOCVD regrowth of InP:Fe, Zn and Si doped on patterned surface by pulsed metalorganic epitaxy (PME)

Seventh International Conference on Indium Phosphide and Related Materials, 1995, p.279-282

1995

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Home Care for Patients With Chronic Obstructive Pulmonary Disease

Archives of physical medicine and rehabilitation, 2010-04, Vol.91 (4), p.664-665

2010

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Faire famille aujourd’hui: Normes, résistances et inventions

Berton, Fabienne

2021

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Low-cost 1.55-mum InGaAsP-InP spot size converted (SSC) laser with conventional active layers

IEEE photonics technology letters, 1997-08, Vol.9 (8), p.1084-1086

1997

Volltextzugriff (PDF)

1.55-mu m InGaAsP-InP spot-size-converted (SSC) laser with simpletechnological process

IEEE photonics technology letters, 1998-06, Vol.10 (6), p.775-777

1998

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Spectrally Resolved Cathodoluminescence Determination of Dopant Diffusion In InP/InGaAsP Based Multi Quantum Well Fabry-Perot Lasers

MRS proceedings, 1999, Vol.588, Article 93

1999

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Le crime, le châtiment et les écossais: Crime, Punishment and the Scots

2019

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Structural characterization techniques for the analysis of semiconductor strained heterostructures

Mikrochimica acta (1966), 1994-12, Vol.114-115 (1), p.431-440

1994

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Uncooled 20 Gb/s direct modulation of high yield, highly reliable 1300 nm InGaAlAs ridge DFB lasers

2009 Conference on Optical Fiber Communication - incudes post deadline papers, 2009, p.1-3

2009

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A New Technological Process to Realize InGaAsP/InP Semi-Insulating Buried Heterostructure Lasers Emitting at 1.55 μm

ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference, 1996, p.533-536

1996

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Incorporation of hemp flour to obtain gluten-free noodles of higher nutritional quality

Etching of InP-based MQW laser structure in a MOCVD reactor by chlorinated compounds

Atomic layer epitaxy of InP

Low-cost 1.55-μm InGaAsP-InP spot size converted (SSC) laser with conventional active layers

Selective Growth of Semi‐insulating InP around Masked Nonplanar Structures Using Low‐Pressure Pulsed Metallorganic Epitaxy

Eaves Structures on (100) InP and InP/InGaAsP/InP Heterostructures

Repetition rate, using a mode-locked hybrid distributed Bragg reflector (ML-HDBR) laser source

1.55-μm InGaAsP-InP spot-size-converted (SSC) laser with simple technological process

MOCVD regrowth of semi-insulating InP and p-n junction blocking layers around laser active stripes

Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-pérot lasers, operating at 10-Gb/s, up to 110 °C, with constant current swing

Transition from island to continuous InP layer growth on (001) GaAs by MOCVD

Electron Microscopy and X‐Ray Diffraction Characterization of InP / GaAs Grown by Atomic Layer Epitaxy

Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge Fabry-Perot lasers, operating at 10-gb/s, up to 110 deg C, with constant current swing

Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-Perot lasers, operating at 10-gb/s, up to 110/spl deg/C, with constant current swing

Percutaneous reactions and tuberculin allergometry

MOCVD regrowth of InP:Fe, Zn and Si doped on patterned surface by pulsed metalorganic epitaxy (PME)

Home Care for Patients With Chronic Obstructive Pulmonary Disease

Faire famille aujourd’hui: Normes, résistances et inventions

Low-cost 1.55-mum InGaAsP-InP spot size converted (SSC) laser with conventional active layers

1.55-mu m InGaAsP-InP spot-size-converted (SSC) laser with simpletechnological process

Spectrally Resolved Cathodoluminescence Determination of Dopant Diffusion In InP/InGaAsP Based Multi Quantum Well Fabry-Perot Lasers

Le crime, le châtiment et les écossais: Crime, Punishment and the Scots

Structural characterization techniques for the analysis of semiconductor strained heterostructures

Uncooled 20 Gb/s direct modulation of high yield, highly reliable 1300 nm InGaAlAs ridge DFB lasers

A New Technological Process to Realize InGaAsP/InP Semi-Insulating Buried Heterostructure Lasers Emitting at 1.55 μm

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