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Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide

Physical review letters, 2012-11, Vol.109 (22), p.226402-226402, Article 226402

2012

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Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)

Semiconductors (Woodbury, N.Y.), 2022-12, Vol.56 (13), p.472-486

2022

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Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (13), p.1055-1062

2021

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Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

Journal of applied physics, 2015-10, Vol.118 (14)

2015

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Sorting algorithms for single-particle imaging experiments at X-ray free-electron lasers

Journal of synchrotron radiation, 2015-11, Vol.22 (6), p.1345-1352

2015

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High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel

Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.122-126

2020

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Growth of AlGaN under the conditions of significant gallium evaporation: Phase separation and enhanced lateral growth

Journal of applied physics, 2017-09, Vol.122 (10)

2017

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Application of RIE-Technology to Control Responsivity of 4H-SiC Photodiodes

Semiconductors (Woodbury, N.Y.), 2023-11, Vol.57 (11), p.469-473

2023

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Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra

Technical physics letters, 2024-02, Vol.50 (2), p.171-173

2024

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The morphostructure of the South Atlantic Ridge in the Tristan da Cunha hot spot area

Doklady earth sciences, 2016-06, Vol.468 (2), p.549-552

Ilyin, A. V.

2016

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Neoproterozoic banded iron formations

Lithology and Mineral Resources, 2009, Vol.44 (1), p.78-86

Ilyin, A. V.

2009

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Study of the thermal mode of a silicon carbide field emission cathode

Journal of physics. Conference series, 2017-07, Vol.872 (1), p.12016

2017

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Study of Through-Thickness Stress Distribution in Steel Double-V Butt Weld

Surface investigation, x-ray, synchrotron and neutron techniques, 2020-10, Vol.14 (Suppl 1), p.S35-S41

2020

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Investigation of the temperature effect on the dynamic parameters of ultrafast silicon carbide current switches

Journal of physics. Conference series, 2018-06, Vol.1038 (1), p.12036

2018

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A study of 4H-SiC diode avalanche shaper

Journal of physics. Conference series, 2017-11, Vol.917 (8), p.82002

2017

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CompHEP: developments and applications

Journal of physics. Conference series, 2017-11, Vol.920 (1), p.12007

2017

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Features of the formation of non-vertical profiles on the surface of 4H-SiC by the reactive-ion etching

IOP conference series. Materials Science and Engineering, 2018-07, Vol.387 (1), p.12068

2018

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Formation of deep mesa-structures on SiC using fluoride plasma

Journal of physics. Conference series, 2016-07, Vol.729 (1), p.12008

2016

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DBAli: a database of protein structure alignments

Bioinformatics, 2001-08, Vol.17 (8), p.746-747

2001

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The Khubsugul Phosphate-Bearing Basin: New Data and Concepts

Lithology and Mineral Resources, 2004-09, Vol.39 (5), p.454-467

Ilyin, A. V.

2004

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Temperature dependence of silicon carbide drift step recovery diodes injection electroluminescence

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12175

2016

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The Extension of the Monte Carlo Method for Neutron Transfer Problems Calculating to the Problems of Quantum Mechanics

Lobachevskii journal of mathematics, 2018-05, Vol.39 (4), p.513-523

2018

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Software Platform for European XFEL: Towards Online Experimental Data Analysis

Lobachevskii journal of mathematics, 2018-11, Vol.39 (9), p.1170-1178

2018

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Comparative geochemistry of shell phosphorites and dictyonema shales of the Baltic

Geochemistry international, 2013, Vol.51 (1), p.23-32

2013

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Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Semiconductors (Woodbury, N.Y.), 2016, Vol.50 (1), p.103-105

2016

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Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide

Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)

Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics

Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

Sorting algorithms for single-particle imaging experiments at X-ray free-electron lasers

High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel

Growth of AlGaN under the conditions of significant gallium evaporation: Phase separation and enhanced lateral growth

Application of RIE-Technology to Control Responsivity of 4H-SiC Photodiodes

Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra

The morphostructure of the South Atlantic Ridge in the Tristan da Cunha hot spot area

Neoproterozoic banded iron formations

Study of the thermal mode of a silicon carbide field emission cathode

Study of Through-Thickness Stress Distribution in Steel Double-V Butt Weld

Investigation of the temperature effect on the dynamic parameters of ultrafast silicon carbide current switches

A study of 4H-SiC diode avalanche shaper

CompHEP: developments and applications

Features of the formation of non-vertical profiles on the surface of 4H-SiC by the reactive-ion etching

Formation of deep mesa-structures on SiC using fluoride plasma

DBAli: a database of protein structure alignments

The Khubsugul Phosphate-Bearing Basin: New Data and Concepts

Temperature dependence of silicon carbide drift step recovery diodes injection electroluminescence

The Extension of the Monte Carlo Method for Neutron Transfer Problems Calculating to the Problems of Quantum Mechanics

Software Platform for European XFEL: Towards Online Experimental Data Analysis

Comparative geochemistry of shell phosphorites and dictyonema shales of the Baltic

Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

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