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Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide

Physical review letters, 2012-11, Vol.109 (22), p.226402-226402, Article 226402

2012

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Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)

Semiconductors (Woodbury, N.Y.), 2022-12, Vol.56 (13), p.472-486

2022

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Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (13), p.1055-1062

2021

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Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

Journal of applied physics, 2015-10, Vol.118 (14)

2015

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High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel

Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.122-126

2020

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Non-truncating LIFR mutation: causal for prominent congenital pain insensitivity phenotype with progressive vertebral destruction?

Clinical genetics, 2016-02, Vol.89 (2), p.210-216

2016

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Towards a Normalized Economic Mechanism Based on E-services

AGRIS on-line Papers in Economics and Informatics, 2014-09, Vol.6 (3), p.39-49

665, 2014

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Residual strength at −40 °C of a precracked cold-formed rectangular hollow section made of ultra-high-strength steel - an engineering approach

Fatigue & fracture of engineering materials & structures, 2014-03, Vol.37 (3), p.325-334

2014

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A 20-year prospective follow-up study to evaluate the development of retinopathy and nephropathy after the onset of type 1 diabetes mellitus: Contribution of glycemic control and metabolic memory

Terapevtic̆eskii arhiv, 2017-01, Vol.89 (10), p.17

2017

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Growth of AlGaN under the conditions of significant gallium evaporation: Phase separation and enhanced lateral growth

Journal of applied physics, 2017-09, Vol.122 (10)

2017

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Formation of non-vertical mesa structures on 4H-SiC RIE method using silicone-organic mask coating

Journal of physics. Conference series, 2019-09, Vol.1313 (1), p.12047

2019

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Application of RIE-Technology to Control Responsivity of 4H-SiC Photodiodes

Semiconductors (Woodbury, N.Y.), 2023-11, Vol.57 (11), p.469-473

2023

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Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra

Technical physics letters, 2024, Vol.50 (2), p.171-173

2024

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The morphostructure of the South Atlantic Ridge in the Tristan da Cunha hot spot area

Doklady earth sciences, 2016-06, Vol.468 (2), p.549-552

Ilyin, A. V.

2016

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Evaluation of markers for renal graft dysfunction in patients with type 1 diabetes mellitus after kidney transplantation and simultaneous pancreas-kidney transplantation

Terapevtic̆eskii arhiv, 2016-01, Vol.88 (10), p.25

2016

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On the Fatigue Strength Calculation of Welded Shell Structures Made of High-Strength Steels under Low-Cycle Loading: Part 2. Development of the Calculation Procedure

Inorganic materials : applied research, 2022, Vol.13 (6), p.1683-1702

2022

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Silicon-Carbide Epitaxial Structures for Betavoltaic Converters

Nanobiotechnology Reports (Online), 2022-12, Vol.17 (Suppl 1), p.S56-S60

2022

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Neoproterozoic banded iron formations

Lithology and Mineral Resources, 2009, Vol.44 (1), p.78-86

Ilyin, A. V.

2009

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Mapping of graphene layers by program identification based on Raman spectroscopy data

Journal of physics. Conference series, 2019-11, Vol.1331 (1), p.12013

2019

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Study of the thermal mode of a silicon carbide field emission cathode

Journal of physics. Conference series, 2017-07, Vol.872 (1), p.12016

2017

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Comprehensive Diagnostics of the Technical Condition of a Turbine Generator Slip Ring Current Collector

Power technology and engineering, 2022, Vol.55 (5), p.749-757

2022

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Study of Through-Thickness Stress Distribution in Steel Double-V Butt Weld

Surface investigation, x-ray, synchrotron and neutron techniques, 2020-10, Vol.14 (Suppl 1), p.S35-S41

2020

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Consolidated Taxation and Its Consequences for Regional Budgets

Ekonomika regiona, 2019-03, Vol.15 (1), p.70-83

2019

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Investigation of the temperature effect on the dynamic parameters of ultrafast silicon carbide current switches

Journal of physics. Conference series, 2018-06, Vol.1038 (1), p.12036

2018

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Study of the features of ultrafast silicon-carbide current switch for sources of soft x-ray radiation based on capillary plasma

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12237

2019

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Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide

Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)

Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics

Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel

Non-truncating LIFR mutation: causal for prominent congenital pain insensitivity phenotype with progressive vertebral destruction?

Towards a Normalized Economic Mechanism Based on E-services

Residual strength at −40 °C of a precracked cold-formed rectangular hollow section made of ultra-high-strength steel - an engineering approach

A 20-year prospective follow-up study to evaluate the development of retinopathy and nephropathy after the onset of type 1 diabetes mellitus: Contribution of glycemic control and metabolic memory

Growth of AlGaN under the conditions of significant gallium evaporation: Phase separation and enhanced lateral growth

Formation of non-vertical mesa structures on 4H-SiC RIE method using silicone-organic mask coating

Application of RIE-Technology to Control Responsivity of 4H-SiC Photodiodes

Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra

The morphostructure of the South Atlantic Ridge in the Tristan da Cunha hot spot area

Evaluation of markers for renal graft dysfunction in patients with type 1 diabetes mellitus after kidney transplantation and simultaneous pancreas-kidney transplantation

On the Fatigue Strength Calculation of Welded Shell Structures Made of High-Strength Steels under Low-Cycle Loading: Part 2. Development of the Calculation Procedure

Silicon-Carbide Epitaxial Structures for Betavoltaic Converters

Neoproterozoic banded iron formations

Mapping of graphene layers by program identification based on Raman spectroscopy data

Study of the thermal mode of a silicon carbide field emission cathode

Comprehensive Diagnostics of the Technical Condition of a Turbine Generator Slip Ring Current Collector

Study of Through-Thickness Stress Distribution in Steel Double-V Butt Weld

Consolidated Taxation and Its Consequences for Regional Budgets

Investigation of the temperature effect on the dynamic parameters of ultrafast silicon carbide current switches

Study of the features of ultrafast silicon-carbide current switch for sources of soft x-ray radiation based on capillary plasma

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