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Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst

Advanced functional materials, 2019-08, Vol.29 (32), p.n/a

2019

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454-n/a

2022

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A review on photoelectrochemical cathodic protection semiconductor thin films for metals

Green energy & environment, 2017-10, Vol.2 (4), p.331-362

2017

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Photogenerated-carrier separation along edge dislocation of WO3 single-crystal nanoflower photoanode

Journal of materials chemistry. A, Materials for energy and sustainability, 2018, Vol.6 (18), p.8604-8611

2018

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Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

IEEE sensors journal, 2022-02, Vol.22 (3), p.1933-1938

2022

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Development of a bi-compound heterogeneous cocatalyst modified p-Si photocathode for boosting the photoelectrochemical water splitting performance

Journal of materials chemistry. A, Materials for energy and sustainability, 2021-04, Vol.9 (14), p.9157-9164

2021

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Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1171-1175

2020

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Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

Journal of materials chemistry. A, Materials for energy and sustainability, 2018, Vol.6 (27), p.12956-12961

2018

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Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

IEEE sensors journal, 2021-01, Vol.21 (2), p.1273-1278

2021

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Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

IEEE electron device letters, 2020-04, Vol.41 (4), p.601-604

2020

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Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5162-5166

2021

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Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

IEEE electron device letters, 2019-02, Vol.40 (2), p.185-188

2019

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Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

Applied physics letters, 2016-10, Vol.109 (15)

2016

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Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Advanced functional materials, 2017-04, Vol.27 (13), p.n/a

2017

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p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

IEEE sensors journal, 2020-01, Vol.20 (1), p.62-66

2020

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Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2310-2317

2024

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High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4859-4863

2022

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High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

IEEE transactions on microwave theory and techniques, 2023-02, Vol.71 (2), p.898-906

2023

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Terahertz Monolithic Integrated Cavity Filter Based on Cyclic Etched SiC Via-Holes

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.311-317

2021

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MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1860-1864

2023

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Regulation of the photogenerated carrier transfer process during photoelectrochemical water splitting: A review

Green energy & environment, 2021-08, Vol.6 (4), p.479-495

2021

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Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

Journal of alloys and compounds, 2019-04, Vol.780, p.476-481

2019

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GaN Schottky Barrier Diode-Based Wideband and Medium-Power Microwave Rectifier for Wireless Power Transmission

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4123-4129

2020

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Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2867-2871

2021

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Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet

Advanced materials interfaces, 2017-05, Vol.4 (10), p.n/a

2017

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Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

A review on photoelectrochemical cathodic protection semiconductor thin films for metals

Photogenerated-carrier separation along edge dislocation of WO3 single-crystal nanoflower photoanode

Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

Development of a bi-compound heterogeneous cocatalyst modified p-Si photocathode for boosting the photoelectrochemical water splitting performance

Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

Terahertz Monolithic Integrated Cavity Filter Based on Cyclic Etched SiC Via-Holes

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

Regulation of the photogenerated carrier transfer process during photoelectrochemical water splitting: A review

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

GaN Schottky Barrier Diode-Based Wideband and Medium-Power Microwave Rectifier for Wireless Power Transmission

Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet

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