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A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode

Applied physics letters, 2020-07, Vol.117 (2)

2020

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β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

Applied physics letters, 2021-05, Vol.118 (20)

2021

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In situ heteroepitaxial construction and transport properties of lattice-matched α-Ir2O3/α-Ga2O3 p-n heterojunction

Applied physics letters, 2021-06, Vol.118 (26)

2021

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Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga2O3 p+–n heterojunction diodes

Applied physics letters, 2023-04, Vol.122 (15)

2023

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A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction

Applied physics letters, 2021-10, Vol.119 (14)

2021

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A self-aligned Ga2O3 heterojunction barrier Schottky power diode

Applied physics letters, 2023-07, Vol.123 (1)

2023

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Dislocation dynamics in α-Ga2O3 micropillars from selective-area epitaxy to epitaxial lateral overgrowth

Applied physics letters, 2022-03, Vol.120 (12)

2022

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Interface structure and work function of W-Cu interfaces

Applied physics letters, 2013-11, Vol.103 (21)

2013

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Effects of strain and interface on work function of a Nb-W metal gate system

Applied physics letters, 2007-12, Vol.91 (24), p.242105-242105-3

2007

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Experimental and theoretical investigation on the high frequency dielectric properties of Ag/Al2O3 composites

Applied physics letters, 2011-07, Vol.99 (3)

2011

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Role of edge dislocations in enhancing the yellow luminescence of n-type GaN

Applied physics letters, 2006-06, Vol.88 (24)

2006

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Bond strength and interface energy between Pd membranes and TiAl supports

Applied physics letters, 2008-09, Vol.93 (10), p.101907-101907-3

2008

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Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

Applied physics letters, 2002-11, Vol.81 (22), p.4218-4220

2002

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Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition

Applied physics letters, 2011-03, Vol.98 (12), p.121903-121903-3

2011

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Electronic structure and work function of metal gate Mo-W system

Applied physics letters, 2007-08, Vol.91 (9), p.092106-092106-3

2007

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Room temperature ferromagnetism of ZnO nanocrystals in amorphous ZnO–Al2O3 matrix

Applied physics letters, 2009-08, Vol.95 (7)

2009

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Structural and transport properties of epitaxial niobium-doped BaTiO3 films

Applied physics letters, 2008-11, Vol.93 (19)

2008

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Calculation of phonon spectra to predict the high-pressure metastable phase in an equilibrium immiscible Cu–Ta system

Applied physics letters, 2004-08, Vol.85 (9), p.1517-1519

2004

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Interface stability and solid-state amorphization in an immiscible Cu–Ta system

Applied physics letters, 2003-12, Vol.83 (22), p.4515-4517

2003

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Effect of lightly Si doping on the minority carrier diffusion length in n -type GaN films

Applied physics letters, 2006-06, Vol.88 (25), p.252101-252101-3

2006

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Band alignment of 2D WS2/HfO2 interfaces from x-ray photoelectron spectroscopy and first-principles calculations

Applied physics letters, 2018-04, Vol.112 (17)

2018

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Influence of defects in n−-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors

Applied physics letters, 2007-02, Vol.90 (6)

2007

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Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

Applied physics letters, 2021-12, Vol.119 (26)

2021

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Life signal detection using an on-chip split-ring based solid state microwave sensor

Applied physics letters, 2014-09, Vol.105 (13)

2014

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Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxide

Applied physics letters, 2006-03, Vol.88 (10), p.101901-101901-3

2006

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A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode

β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

In situ heteroepitaxial construction and transport properties of lattice-matched α-Ir2O3/α-Ga2O3 p-n heterojunction

Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga2O3 p+–n heterojunction diodes

A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction

A self-aligned Ga2O3 heterojunction barrier Schottky power diode

Dislocation dynamics in α-Ga2O3 micropillars from selective-area epitaxy to epitaxial lateral overgrowth

Interface structure and work function of W-Cu interfaces

Effects of strain and interface on work function of a Nb-W metal gate system

Experimental and theoretical investigation on the high frequency dielectric properties of Ag/Al2O3 composites

Role of edge dislocations in enhancing the yellow luminescence of n-type GaN

Bond strength and interface energy between Pd membranes and TiAl supports

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition

Electronic structure and work function of metal gate Mo-W system

Room temperature ferromagnetism of ZnO nanocrystals in amorphous ZnO–Al2O3 matrix

Structural and transport properties of epitaxial niobium-doped BaTiO3 films

Calculation of phonon spectra to predict the high-pressure metastable phase in an equilibrium immiscible Cu–Ta system

Interface stability and solid-state amorphization in an immiscible Cu–Ta system

Effect of lightly Si doping on the minority carrier diffusion length in n -type GaN films

Band alignment of 2D WS2/HfO2 interfaces from x-ray photoelectron spectroscopy and first-principles calculations

Influence of defects in n−-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors

Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

Life signal detection using an on-chip split-ring based solid state microwave sensor

Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxide

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