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A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

2010 International Electron Devices Meeting, 2010, p.27.5.1-27.5.4

2010

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IEEE_Xplore

A 0.05pJ/p-mV 5th-derivative pulse generator for full-band IR-UWB transceiver in 0.18µm CMOS

2011 IEEE Radio and Wireless Symposium, 2011, p.70-73

2011

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IEEE_Xplore

0.07 um InP HEMT MMIC Technology for G-band Power Amplifiers

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, 2006, p.39-41

2006

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IEEE_Xplore

A 0.1 /spl mu/m W-band HEMT production process for high yield and high performance low noise and power MMICs

Proceedings of 1994 IEEE GaAs IC Symposium, 1994, p.325-328

1994

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IEEE_Xplore

A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

GaAs IC Symposium Technical Digest 1992, 1992, p.71-74

1992

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IEEE_Xplore

0.1 μm InGaAs/InAlAs/InP HEMT MMICs: a flight qualified technology

Technical digest - IEEE Gallium Arsenide Integrated Circuit Symposium, 2002, p.77-80

2002

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0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax

IEEE electron device letters, 1994-11, Vol.15 (11), p.477-479

1994

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IEEE_Xplore

0.10 mu m graded InGaAs channel InP HEMT with 305 GHzf(T) and 340 GHz f(max)

IEEE electron device letters, 1994-11, Vol.15 (11), p.477-479

1994

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A 0.13µm CMOS ΔΣ PLL FM transmitter

2011 NORCHIP, 2011, p.1-4

2011

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IEEE_Xplore

A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 2001, p.143-146

2001

Link zum Volltext
IEEE_Xplore

A 0.18μm CMOS Fully Differential RF Demodulator for FM-UWB Based P-PAN Receivers

APCCAS 2006 - 2006 IEEE Asia Pacific Conference on Circuits and Systems, 2006, p.359-362

2006

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IEEE_Xplore

(In 0.2 Ga 0.8 As)/GaAs quantum well laser with C doped cladding and ohmic contact layers

Journal of electronic materials, 1998-09, Vol.27 (9), p.L61

1998

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0.2-μm n-channel and p-channel MOSFETs integrated on oxidation-planarized twin-tubs

IEEE electron device letters, 1996-11, Vol.17 (11), p.500-502

1996

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IEEE_Xplore

0.2-mu m n-channel and p-channel MOSFETs integrated onoxidation-planarized twin-tubs

IEEE electron device letters, 1996-11, Vol.17 (11), p.500-502

1996

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A 0.2 V, 480 kb Subthreshold SRAM With 1 k Cells Per Bitline for Ultra-Low-Voltage Computing

IEEE journal of solid-state circuits, 2008-02, Vol.43 (2), p.518-529

2008

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IEEE_Xplore

0.25/spl mu/m In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InAs/sub 0.3/P/sub 0.7/ composite channel HEMTs with an f/sub T/ of 115GHz

2005 Asia-Pacific Microwave Conference Proceedings, 2005, Vol.2, p.3 pp.

2005

Link zum Volltext
IEEE_Xplore

Al(0.3)Ga(0.7)As / Al(0.05)Ga(0.95)As light-emitting diodes on GaAs-coated Si substrates grown by liquid phase epitaxy

Applied physics letters, 1988-09, Vol.53, p.1201-1203

1988

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A 0.3 MJ SMES magnet of a voltage sag compensation system

IEEE transactions on applied superconductivity, 2004-06, Vol.14 (2), p.717-720

2004

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IEEE_Xplore

A 0.5-14-GHz 10.6-dB CMOS cascode distributed amplifier

2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408), 2003, p.139-140

2003

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IEEE_Xplore

A 0.5 V 68 nW ECG Monitoring Analog Front-End for Arrhythmia Diagnosis

Journal of low power electronics and applications, 2018-09, Vol.8 (3), p.27

2018

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0.5 V ultra-low power wideband LNA with forward body bias technique

Electronics letters, 2009-03, Vol.45 (6), p.1-1

2009

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0.5 V ultra-low power wideband LNA with forward body bias technique

Electronics letters, 2009-03, Vol.45 (6), p.289-290

2009

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0.5 μ SWAMI/NMOS process technology with electron beam lithography

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1985-01, Vol.3 (1), p.295-298

1985

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In(0.53)Ga(0.47)As/InP floating guard ring avalanche photodiodes fabricated by double diffusion

IEEE photonics technology letters, 1990-08, Vol.2 (8), p.571-573

1990

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0.5V FinFET SRAM with dynamic threshold control of pass gates for salvaging malfunctioned bits

2010 Proceedings of ESSCIRC, 2010, p.474-477

2010

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IEEE_Xplore

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A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

A 0.05pJ/p-mV 5th-derivative pulse generator for full-band IR-UWB transceiver in 0.18µm CMOS

0.07 um InP HEMT MMIC Technology for G-band Power Amplifiers

A 0.1 /spl mu/m W-band HEMT production process for high yield and high performance low noise and power MMICs

A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

0.1 μm InGaAs/InAlAs/InP HEMT MMICs: a flight qualified technology

0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax

0.10 mu m graded InGaAs channel InP HEMT with 305 GHzf(T) and 340 GHz f(max)

A 0.13µm CMOS ΔΣ PLL FM transmitter

A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

A 0.18μm CMOS Fully Differential RF Demodulator for FM-UWB Based P-PAN Receivers

(In 0.2 Ga 0.8 As)/GaAs quantum well laser with C doped cladding and ohmic contact layers

0.2-μm n-channel and p-channel MOSFETs integrated on oxidation-planarized twin-tubs

0.2-mu m n-channel and p-channel MOSFETs integrated onoxidation-planarized twin-tubs

A 0.2 V, 480 kb Subthreshold SRAM With 1 k Cells Per Bitline for Ultra-Low-Voltage Computing

0.25/spl mu/m In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InAs/sub 0.3/P/sub 0.7/ composite channel HEMTs with an f/sub T/ of 115GHz

Al(0.3)Ga(0.7)As / Al(0.05)Ga(0.95)As light-emitting diodes on GaAs-coated Si substrates grown by liquid phase epitaxy

A 0.3 MJ SMES magnet of a voltage sag compensation system

A 0.5-14-GHz 10.6-dB CMOS cascode distributed amplifier

A 0.5 V 68 nW ECG Monitoring Analog Front-End for Arrhythmia Diagnosis

0.5 V ultra-low power wideband LNA with forward body bias technique

0.5 V ultra-low power wideband LNA with forward body bias technique

0.5 μ SWAMI/NMOS process technology with electron beam lithography

In(0.53)Ga(0.47)As/InP floating guard ring avalanche photodiodes fabricated by double diffusion

0.5V FinFET SRAM with dynamic threshold control of pass gates for salvaging malfunctioned bits

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