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Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells

Physical review. B, Condensed matter and materials physics, 2015-05, Vol.91 (20), Article 205424

2015

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Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

Journal of applied physics, 2021-02, Vol.129 (5)

2021

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Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots

Physical review. B, Condensed matter and materials physics, 2006-03, Vol.73 (11)

2006

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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Applied physics letters, 2001-02, Vol.78 (9), p.1252-1254

2001

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Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

Nanomaterials (Basel, Switzerland), 2023-09, Vol.13 (18), p.2569

2023

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Exciton localization on basal stacking faults in a -plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Journal of applied physics, 2009-02, Vol.105 (4), p.043102-043102-7

2009

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Room-Temperature Transport of Indirect Excitons in ( Al , Ga ) N / GaN Quantum Wells

Physical review applied, 2016-07, Vol.6 (1), Article 014011

2016

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Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation

Physical review. B, Condensed matter and materials physics, 2004-01, Vol.69 (3)

2004

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Synthesis and fading of eighteenth-century Prussian blue pigments: a combined study by spectroscopic and diffractive techniques using laboratory and synchrotron radiation sources

Journal of synchrotron radiation, 2013-05, Vol.20 (3), p.460-473

2013

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Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

Journal of applied physics, 2004-07, Vol.96 (1), p.180-185

2004

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Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on $a$-Plane GaN Substrates

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JC01-08JC01-4

2013

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Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN

Journal of applied physics, 2012-02, Vol.111 (3), p.033517-033517-10

2012

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Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes

Applied physics letters, 2002-01, Vol.80 (3), p.428-430

2002

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Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation

Physical review. B, Condensed matter, 2003-11, Vol.68 (20), Article 205301

2003

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High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Japanese Journal of Applied Physics, 2010-06, Vol.49 (6), p.061001-061001-4

2010

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Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density $m$-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate

Jpn J Appl Phys, 2011-11, Vol.50 (11), p.111002-111002-5

2011

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Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes

Applied physics letters, 2001-03, Vol.78 (11), p.1538-1540

2001

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Exciton recombination dynamics in a -plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence

Journal of applied physics, 2010-02, Vol.107 (4), p.043524-043524-5

2010

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Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells

Physical review. B, Condensed matter, 1998-11, Vol.58 (20), p.R13371-R13374

1998

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Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate

Journal of applied physics, 2000-07, Vol.88 (1), p.183-187

2000

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Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Applied physics letters, 1999-05, Vol.74 (22), p.3353-3355

1999

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Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Physica status solidi. C, 2011-04, Vol.8 (4), p.1394-1397

2011

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Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures

Physical review. B, Condensed matter and materials physics, 2011-06, Vol.83 (24), Article 245326

2011

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Barrier-width dependence of group-III nitrides quantum-well transition energies

Physical review. B, Condensed matter, 1999-07, Vol.60 (3), p.1496-1499

1999

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Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime

Physical review. B, Condensed matter and materials physics, 2008-02, Vol.77 (8), Article 085310

2008

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Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

Exciton localization on basal stacking faults in a -plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Room-Temperature Transport of Indirect Excitons in ( Al , Ga ) N / GaN Quantum Wells

Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation

Synthesis and fading of eighteenth-century Prussian blue pigments: a combined study by spectroscopic and diffractive techniques using laboratory and synchrotron radiation sources

Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on $a$-Plane GaN Substrates

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN

Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes

Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density $m$-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate

Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes

Exciton recombination dynamics in a -plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence

Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells

Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures

Barrier-width dependence of group-III nitrides quantum-well transition energies

Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime

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