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Cerebral infarction after high-dose intravenous immunoglobulin therapy for Kawasaki disease

The Journal of pediatrics, 2006-03, Vol.148 (3), p.399-400

2006

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CSF hypocretin‐1 (orexin‐A) concentrations in narcolepsy with and without cataplexy and idiopathic hypersomnia

Journal of sleep research, 2002-03, Vol.11 (1), p.91-93

2002

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A six year-old case of narcolepsy

No to hattatsu, 2003-11, Vol.35 (6), p.505

2003

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Bromide Therapy for Epilepsy with Myoclonic Absences

Tenkan kenkyū, 2005, Vol.23 (2), p.137-142

2005

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Improved Thermoelectric Power Factor of InGaZnO/SiO₂ Thin Film Transistor via Gate-Tunable Energy Filtering

IEEE electron device letters, 2021-08, Vol.42 (8), p.1236-1239

2021

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Guideline for Gynecological Practice in Japan: Japan Society of Obstetrics and Gynecology and Japan Association of Obstetricians and Gynecologists 2020 edition

The journal of obstetrics and gynaecology research, 2021-01, Vol.47 (1), p.5-25

2021

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Atomic Imaging of Interface Defects in an Insulating Film on Diamond

Nano letters, 2023-02, Vol.23 (4), p.1189-1194

2023

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Improvement in Bias Stress Stability of Solution-Processed Amorphous InZnO Thin-Film Transistors via Low-Temperature Photosensitive Passivation

IEEE electron device letters, 2020-09, Vol.41 (9), p.1372-1375

2020

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A preliminary examination of the association between locomotive syndrome and circulating miRNA-199 in community-dwelling people: The Yakumo study

Journal of orthopaedic science : official journal of the Japanese Orthopaedic Association, 2022-05, Vol.27 (3), p.696-700

2022

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Rapid photo-assisted activation and enhancement of solution-processed InZnO thin-film transistors

Journal of physics. D, Applied physics, 2020-01, Vol.53 (4), p.45102

2020

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Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression

Japanese Journal of Applied Physics, 2019-09, Vol.58 (9), p.90502

2019

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Hot carrier effects in InGaZnO thin-film transistor

Applied physics express, 2019-09, Vol.12 (9), p.94007

2019

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Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a‑InGaZnO at 45 °C

ACS applied materials & interfaces, 2018-07, Vol.10 (29), p.24590-24597

2018

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Guidelines for office gynecology in Japan: Japan Society of Obstetrics and Gynecology (JSOG) and Japan Association of Obstetricians and Gynecologists (JAOG) 2017 edition

The journal of obstetrics and gynaecology research, 2019-04, Vol.45 (4), p.766-786

2019

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High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator

AIP advances, 2018-09, Vol.8 (9), p.095001-095001-8

2018

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Self-Heating Suppressed Structure of a-IGZO Thin-Film Transistor

IEEE electron device letters, 2018-09, Vol.39 (9), p.1322-1325

2018

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Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa2O6 as Gate Insulator Deposited by Sputtering Method

Physica status solidi. A, Applications and materials science, 2019-03, Vol.216 (5), p.n/a

2019

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Association between Low Muscle Mass and Inflammatory Cytokines

BioMed research international, 2021, Vol.2021, p.5572742-7

2021

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SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors

Thin solid films, 2018-11, Vol.665, p.173-178

2018

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High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

Scientific reports, 2015-12, Vol.5 (1), p.18168-18168, Article 18168

2015

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Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors

Applied physics express, 2020-05, Vol.13 (5), p.54003

2020

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Properties of TlZnSnO film fabricated via sputtering from TlZnSnO target

Journal of physics. D, Applied physics, 2018-10, Vol.51 (41), p.415103

2018

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Highly reliable low-temperature (180 °C) solution-processed passivation for amorphous In–Zn–O thin-film transistors

Applied physics express, 2019-06, Vol.12 (6), p.64002

2019

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Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al 2 O 3 passivation using dimethylaluminum hydride at 200 °C

Journal of physics. D, Applied physics, 2020-04, Vol.53 (16), p.165103

2020

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High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO

ACS applied electronic materials, 2020-08, Vol.2 (8), p.2398-2407

2020

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Cerebral infarction after high-dose intravenous immunoglobulin therapy for Kawasaki disease

CSF hypocretin‐1 (orexin‐A) concentrations in narcolepsy with and without cataplexy and idiopathic hypersomnia

A six year-old case of narcolepsy

Bromide Therapy for Epilepsy with Myoclonic Absences

Improved Thermoelectric Power Factor of InGaZnO/SiO₂ Thin Film Transistor via Gate-Tunable Energy Filtering

Guideline for Gynecological Practice in Japan: Japan Society of Obstetrics and Gynecology and Japan Association of Obstetricians and Gynecologists 2020 edition

Atomic Imaging of Interface Defects in an Insulating Film on Diamond

Improvement in Bias Stress Stability of Solution-Processed Amorphous InZnO Thin-Film Transistors via Low-Temperature Photosensitive Passivation

A preliminary examination of the association between locomotive syndrome and circulating miRNA-199 in community-dwelling people: The Yakumo study

Rapid photo-assisted activation and enhancement of solution-processed InZnO thin-film transistors

Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression

Hot carrier effects in InGaZnO thin-film transistor

Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a‑InGaZnO at 45 °C

Guidelines for office gynecology in Japan: Japan Society of Obstetrics and Gynecology (JSOG) and Japan Association of Obstetricians and Gynecologists (JAOG) 2017 edition

High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator

Self-Heating Suppressed Structure of a-IGZO Thin-Film Transistor

Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa2O6 as Gate Insulator Deposited by Sputtering Method

Association between Low Muscle Mass and Inflammatory Cytokines

SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors

Properties of TlZnSnO film fabricated via sputtering from TlZnSnO target

Highly reliable low-temperature (180 °C) solution-processed passivation for amorphous In–Zn–O thin-film transistors

Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al 2 O 3 passivation using dimethylaluminum hydride at 200 °C

High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO

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