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Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Journal of applied physics, 2013-01, Vol.113 (3)

2013

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Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices

Applied physics express, 2013-04, Vol.6 (4), p.44001

2013

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Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

Applied physics express, 2011-12, Vol.4 (12), p.124101

2011

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High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure

Applied physics express, 2015-10, Vol.8 (10), p.101001

2015

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Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

Applied physics letters, 2009-06, Vol.94 (23), p.233506-233506-3

2009

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A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Applied physics letters, 2023-01, Vol.122 (3)

2023

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Searching for THz Gunn oscillations in GaN planar nanodiodes

Journal of applied physics, 2012-06, Vol.111 (11), p.113705-113705-9

2012

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Gallium nitride MEMS resonators: how residual stress impacts design and performances

Microsystem technologies : sensors, actuators, systems integration, 2018, Vol.24 (1), p.371-377

2018

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Nonlinear nanochannels for room temperature terahertz heterodyne detection

Semiconductor science and technology, 2013-12, Vol.28 (12), p.125024

2013

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Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

Solid-state electronics, 2012-06, Vol.72, p.15-21

2012

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Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

Applied physics express, 2012-03, Vol.5 (3), p.34103

2012

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Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas

Applied physics express, 2012-06, Vol.5 (6), p.67201

2012

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In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Journal of crystal growth, 2007, Vol.298, p.826-830

2007

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Zero-bias GaN implanted Self-Switching Diode coupled with bow-tie antenna for THz applications

2014 44th European Microwave Conference, 2014, p.806-809

2014

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First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications

IEEE transactions on device and materials reliability, 2013-12, Vol.13 (4), p.480-488

2013

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GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

2011 Joint Conference of the IEEE International Frequency Control and the European Frequency and Time Forum (FCS) Proceedings, 2011, p.1-5

2011

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Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices

Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure

Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Searching for THz Gunn oscillations in GaN planar nanodiodes

Gallium nitride MEMS resonators: how residual stress impacts design and performances

Nonlinear nanochannels for room temperature terahertz heterodyne detection

Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Zero-bias GaN implanted Self-Switching Diode coupled with bow-tie antenna for THz applications

First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications

GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

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