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Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Journal of applied physics, 2013-01, Vol.113 (3)

2013

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Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices

Applied physics express, 2013-04, Vol.6 (4), p.44001

2013

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Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

Applied physics express, 2011-12, Vol.4 (12), p.124101

2011

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High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure

Applied physics express, 2015-10, Vol.8 (10), p.101001

2015

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Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

Applied physics letters, 2009-06, Vol.94 (23), p.233506-233506-3

2009

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Porous Gold Films Fabricated by Wet-Chemistry Processes

Journal of nanomaterials, 2016-01, Vol.2016, p.1-9

2016

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A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Applied physics letters, 2023-01, Vol.122 (3)

2023

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Searching for THz Gunn oscillations in GaN planar nanodiodes

Journal of applied physics, 2012-06, Vol.111 (11), p.113705-113705-9

2012

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Gallium nitride MEMS resonators: how residual stress impacts design and performances

Microsystem technologies : sensors, actuators, systems integration, 2018, Vol.24 (1), p.371-377

2018

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Nonlinear nanochannels for room temperature terahertz heterodyne detection

Semiconductor science and technology, 2013-12, Vol.28 (12), p.125024

2013

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Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

Solid-state electronics, 2012-06, Vol.72, p.15-21

2012

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Characterization and analysis of electrical trap related effects on the reliability of AIGaN/GaN HEMTs

Solid-state electronics, 2012, Vol.72, p.15-21

2012

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Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

Applied physics express, 2012-03, Vol.5 (3), p.34103

2012

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Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas

Applied physics express, 2012-06, Vol.5 (6), p.67201

2012

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Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon

Applied physics express, 2011-06, Vol.4 (6), p.64106

2011

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Toward highly scaled AlN/GaN-on-Silicon devices for millimeter wave applications

International journal of microwave and wireless technologies, 2013-06, Vol.5 (3), p.335-340

2013

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Effect of passivation on microwave power performances of AlGaN/GaN/Si HEMTs

Sensors & transducers, 2014-05, Vol.27 (Special Issue), p.277-279

2014

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In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Journal of crystal growth, 2007, Vol.298, p.826-830

2007

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Gallium nitride MEMS resonators: How residual stress impacts design and performances

2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2016, p.1-4

2016

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Zero-bias GaN implanted Self-Switching Diode coupled with bow-tie antenna for THz applications

2014 44th European Microwave Conference, 2014, p.806-809

2014

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First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications

IEEE transactions on device and materials reliability, 2013-12, Vol.13 (4), p.480-488

2013

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Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, 2011, p.581-584

2011

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GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

2011 Joint Conference of the IEEE International Frequency Control and the European Frequency and Time Forum (FCS) Proceedings, 2011, p.1-5

2011

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An international cohort study of autosomal dominant tubulointerstitial kidney disease due to REN mutations identifies distinct clinical subtypes

Kidney international, 2020-12, Vol.98 (6), p.1589-1604

2020

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Value of biomarkers for predicting immunoglobulin A vasculitis nephritis outcome in an adult prospective cohort

Nephrology, dialysis, transplantation, 2018-09, Vol.33 (9), p.1579-1590

2018

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Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices

Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure

Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

Porous Gold Films Fabricated by Wet-Chemistry Processes

A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Searching for THz Gunn oscillations in GaN planar nanodiodes

Gallium nitride MEMS resonators: how residual stress impacts design and performances

Nonlinear nanochannels for room temperature terahertz heterodyne detection

Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

Characterization and analysis of electrical trap related effects on the reliability of AIGaN/GaN HEMTs

Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas

Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon

Toward highly scaled AlN/GaN-on-Silicon devices for millimeter wave applications

Effect of passivation on microwave power performances of AlGaN/GaN/Si HEMTs

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Gallium nitride MEMS resonators: How residual stress impacts design and performances

Zero-bias GaN implanted Self-Switching Diode coupled with bow-tie antenna for THz applications

First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications

Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

An international cohort study of autosomal dominant tubulointerstitial kidney disease due to REN mutations identifies distinct clinical subtypes

Value of biomarkers for predicting immunoglobulin A vasculitis nephritis outcome in an adult prospective cohort

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