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(0 0 l)-oriented Bi 2Sr 2Co 2O y and Ca 3Co 4O 9 films: Self-assembly orientation and growth mechanism by chemical solution deposition

Acta materialia, 2010, Vol.58 (12), p.4281-4291

2010

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0.0012 mm 2 , 8 mW, single‐to‐differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

Electronics letters, 2013-05, Vol.49 (11), p.692-694

2013

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0.0012 mm^sup 2^, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

Electronics letters, 2013-05, Vol.49 (11), p.1

2013

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0.0012 mm super( 2), 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

Electronics letters, 2013-05, Vol.49 (11), p.1-1

2013

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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

Electronics letters, 2013-05, Vol.49 (11), p.692-694

2013

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A 0.002-mm ^ 6.4-mW 10-Gb/s Full-Rate Direct DFE Receiver With 59.6% Horizontal Eye Opening Under 23.3-dB Channel Loss at Nyquist Frequency

IEEE transactions on microwave theory and techniques, 2014-12, Vol.62 (12), p.3107-3117

2014

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A 0.003 mm ^ 10 b 240 MS/s 0.7 mW SAR ADC in 28 nm CMOS With Digital Error Correction and Correlated-Reversed Switching

IEEE journal of solid-state circuits, 2015-06, Vol.50 (6), p.1382-1398

2015

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A 0.0035-mm2 0.42-pJ/bit 8-32-Gb/s Reference-Less CDR Incorporating Adaptively-Biased ChargeSharing Integrator, Alexander PFD, and 1-Tap DFE

ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC), 2023, p.177-180

2023

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0.013 mm 2 , kHz‐to‐GHz‐bandwidth, third‐order all‐pole lowpass filter with 0.52‐to‐1.11 pW/pole/Hz efficiency

Electronics letters, 2013-10, Vol.49 (21), p.1340-1342

2013

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0.013 mm^sup 2^, kHz-to-GHz-bandwidth, third-order all-pole lowpass filter with 0.52-to-1.11 pW/pole/Hz efficiency

Electronics letters, 2013-10, Vol.49 (21), p.1340

2013

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0.013 mm super( 2), kHz-to-GHz-bandwidth, third-order all-pole lowpass filter with 0.52-to-1.11 pW/pole/Hz efficiency

Electronics letters, 2013-10, Vol.49 (21), p.1340-1340

2013

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0.013 mm2, kHz-to-GHz-bandwidth, third-order all-pole lowpass filter with 0.52-to-1.11 pW/pole/Hz efficiency

Electronics letters, 2013-10, Vol.49 (21), p.1340-1342

2013

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0.026µm2 high performance Embedded DRAM in 22nm technology for server and SOC applications

2014 IEEE International Electron Devices Meeting, 2014, p.19.4.1-19.4.4

2014

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0.03 V Electrolysis Voltage Driven Hydrazine Assisted Hydrogen Generation on NiCo phosphide Nanowires Supported NiCoHydroxide Nanosheets

ChemElectroChem, 2020-07, Vol.7 (14), p.3089-3097

2020

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0.07 mm^sup 2^, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

Electronics letters, 2012-05, Vol.48 (10), p.1

2012

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0.07 mm super( 2), 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

Electronics letters, 2012-05, Vol.48 (10), p.1-1

2012

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0.07 mm2, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

Electronics letters, 2012, Vol.48 (10), p.552-554

2012

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A 0.1-10GHz Ultra-Wideband High-Gain Low-Noise Amplifier for UWB receiver

2021 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2021, p.1-3

2021

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A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

Microelectronics, 2018-02, Vol.72, p.58-73

2018

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Al 0.1 Ga 0.9 N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 10 6

IEEE electron device letters, 2022-09, Vol.43 (9), p.1479-1482

2022

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Al 0.1 Ga 0.9 N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown

Optics express, 2023-11, Vol.31 (23), p.37516

2023

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A 0-1 LP Model for the Integration and Consolidation of Air Cargo Shipments

Operations research, 2009-03, Vol.57 (2), p.402-412

2009

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A 0.1-micron gate Al(0.5)In(0.5)As/Ga(0.5)In(0.5)As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35, p.818-823

1988

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A 0.1- mu m gate Al sub(0.5)As/Ga sub(0.5)In sub(0.5)As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-01, Vol.35 (7), p.818-823

1988

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A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.818-823

1988

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