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Fabrication and Characterization of a High-Power Assembly With a 20-Junction Monolithically Stacked Laser Power Converter

IEEE journal of photovoltaics, 2018-09, Vol.8 (5), p.1355-1362

2018

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2004-nm Ridge-Waveguide Distributed Feedback Lasers With InGaAs Multi-Quantum Wells

IEEE photonics technology letters, 2016-10, Vol.28 (20), p.2257-2260

2016

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Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots

Chinese physics B, 2021-11, Vol.30 (11), p.110201-169

2021

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Theoretical study of the effects of InAs/GaAs quantum dot layer’s position in i-region on current-voltage characteristic in intermediate band solar cells

Applied physics letters, 2012-08, Vol.101 (8), p.81118

2012

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Single-section mode-locked 1.55-μm InAs/InP quantum dot lasers grown by MOVPE

Optics communications, 2016-07, Vol.370, p.18-21

2016

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Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates

Chinese physics B, 2021-01, Vol.30 (1), p.16102

2021

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The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy

Journal of crystal growth, 2014-06, Vol.396, p.33-37

2014

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Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 μm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design

Chinese physics letters, 2011-04, Vol.28 (4), p.044201

2011

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Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots

Chinese physics letters, 2011-03, Vol.28 (3), p.038401

2011

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A 10 Gb/s Directly-Modulated 1.3 μm InAs/GaAs Quantum-Dot Laser

Chinese physics letters, 2010-03, Vol.27 (3), p.034209, Article 034209

2010

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Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model

Chinese physics B, 2011-07, Vol.20 (7), p.380-386, Article 077301

汪明谷永先季海铭杨涛王占国

2011

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Theoretical analysis of modal gain in p-doped 1.3 μm InAs/GaAs quantum dot lasers

Physica status solidi. C, 2009-04, Vol.6 (4), p.948-951

2009

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High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

Chinese physics letters, 2010-02, Vol.27 (2), p.285-287

季海铭杨涛曹玉莲徐鹏飞谷永先马文全王占国

2010

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Temperature-dependent modulation characteristics for 1.3 μ m InAs/GaAs quantum dot lasers

Journal of applied physics, 2010-01, Vol.107 (1), p.013102-013102-5

2010

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Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers

Chinese physics letters, 2016-12, Vol.33 (12), p.63-67

吕尊仁季海铭杨晓光罗帅高凤许锋杨涛

2016

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Measurement of Linewidth Enhancement Factor for 1.3- \mu InAs/GaAs Quantum Dot Lasers

IEEE photonics technology letters, 2013-03, Vol.25 (5), p.488-491

2013

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Two-state-lasing in InAs/InGaAsP/InP quantum dot microcylinder lasers

2016 International Semiconductor Laser Conference (ISLC), 2016, p.1-2

2016

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Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating

Applied physics letters, 2010-04, Vol.96 (17), p.171101-171101-3

2010

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Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-µm InAs–GaAs Quantum-Dot Lasers

Japanese Journal of Applied Physics, 2010-07, Vol.49 (7R), p.72103

2010

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Impact of photoneutrons on reactivity measurements for TMSR-SF1

Nuclear science and techniques, 2017-06, Vol.28 (6), p.101-107, Article 76

2017

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First case of cross-auxiliary double domino donor liver transplantation

World journal of gastroenterology : WJG, 2017-11, Vol.23 (44), p.7939-7944

2017

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Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substratesProject supported by the National Natural Science Foundation of China (Grant Nos. 61874148, 61974141, and 61674020), the Beijing Natural Science Foundation, China (Grant No. 4192043), the State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Grant No. IPOC2018ZT01), and the 111 Project of China (Grant No. B07005)

Chinese physics B, 2021-01, Vol.30 (1)

2021

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Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots Project supported by the National Natural Science Foundation of China (Grant Nos. 61874148, 61974141, and 61674020), the Beijing Natural Science Foundation, China (Grant No. 4192043), the National Key Research and Development Program of China (Grant No. 2018YFB2200104), the Fund from the Beijing Municipal Science & Technology Commission, China (Grant No. Z191100004819012), the Project of the State Key Laboratory

Chinese physics B, 2021-11, Vol.30 (11)

2021

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Contentious-wave lasing near 1.55 μm in microcylinder with quantum dot active regions

2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2017, p.1-2

2017

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Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot LasersSupported by the National Key Research and Development Program of China under Grant No 2016YFB0402302, and the National Natural Science Foundation of China under Grant No 91433206

Chinese physics letters, 2016-12, Vol.33 (12)

2016

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Fabrication and Characterization of a High-Power Assembly With a 20-Junction Monolithically Stacked Laser Power Converter

2004-nm Ridge-Waveguide Distributed Feedback Lasers With InGaAs Multi-Quantum Wells

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots

Theoretical study of the effects of InAs/GaAs quantum dot layer’s position in i-region on current-voltage characteristic in intermediate band solar cells

Single-section mode-locked 1.55-μm InAs/InP quantum dot lasers grown by MOVPE

Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates

The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy

Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 μm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design

Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots

A 10 Gb/s Directly-Modulated 1.3 μm InAs/GaAs Quantum-Dot Laser

Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model

Theoretical analysis of modal gain in p-doped 1.3 μm InAs/GaAs quantum dot lasers

High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

Temperature-dependent modulation characteristics for 1.3 μ m InAs/GaAs quantum dot lasers

Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers

Measurement of Linewidth Enhancement Factor for 1.3- \mu InAs/GaAs Quantum Dot Lasers

Two-state-lasing in InAs/InGaAsP/InP quantum dot microcylinder lasers

Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating

Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-µm InAs–GaAs Quantum-Dot Lasers

Impact of photoneutrons on reactivity measurements for TMSR-SF1

First case of cross-auxiliary double domino donor liver transplantation

Contentious-wave lasing near 1.55 μm in microcylinder with quantum dot active regions

Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot LasersSupported by the National Key Research and Development Program of China under Grant No 2016YFB0402302, and the National Natural Science Foundation of China under Grant No 91433206

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