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Enhanced performance of tunable external-cavity 15 μm InAs/InP quantum dot lasers using facet coating

Applied optics (2004), 2015-01, Vol.54 (3), p.472

2015

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Imaging features of retinal hemangioblastoma: A case report

World journal of clinical cases, 2023-01, Vol.11 (3), p.692-699

2023

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Single-section mode-locked 1.55-μm InAs/InP quantum dot lasers grown by MOVPE

Optics communications, 2016-07, Vol.370, p.18-21

2016

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Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers

Optics letters, 2012-04, Vol.37 (8), p.1298

2012

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Measurement of Linewidth Enhancement Factor for 1.3- \mu InAs/GaAs Quantum Dot Lasers

IEEE photonics technology letters, 2013-03, Vol.25 (5), p.488-491

2013

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Two-state-lasing in InAs/InGaAsP/InP quantum dot microcylinder lasers

2016 International Semiconductor Laser Conference (ISLC), 2016, p.1-2

2016

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Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-µm InAs–GaAs Quantum-Dot Lasers

Japanese Journal of Applied Physics, 2010-07, Vol.49 (7R), p.72103

2010

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First case of cross-auxiliary double domino donor liver transplantation

World journal of gastroenterology : WJG, 2017-11, Vol.23 (44), p.7939-7944

2017

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Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substratesProject supported by the National Natural Science Foundation of China (Grant Nos. 61874148, 61974141, and 61674020), the Beijing Natural Science Foundation, China (Grant No. 4192043), the State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Grant No. IPOC2018ZT01), and the 111 Project of China (Grant No. B07005)

Chinese physics B, 2021-01, Vol.30 (1)

2021

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Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots Project supported by the National Natural Science Foundation of China (Grant Nos. 61874148, 61974141, and 61674020), the Beijing Natural Science Foundation, China (Grant No. 4192043), the National Key Research and Development Program of China (Grant No. 2018YFB2200104), the Fund from the Beijing Municipal Science & Technology Commission, China (Grant No. Z191100004819012), the Project of the State Key Laboratory

Chinese physics B, 2021-11, Vol.30 (11)

2021

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Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot LasersSupported by the National Key Research and Development Program of China under Grant No 2016YFB0402302, and the National Natural Science Foundation of China under Grant No 91433206

Chinese physics letters, 2016-12, Vol.33 (12)

2016

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Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-\mbox{$\mu$m} InAs--GaAs Quantum-Dot Lasers

Jpn J Appl Phys, 2010-07, Vol.49 (7), p.072103-072103-4

2010

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High Characteristic Temperature 1.3 Delta mm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

Chinese physics letters, 2010-02, Vol.27 (2), p.027801-027801

2010

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Theoretical analysis of modal gain in p-doped 1.3 mum InAs/GaAs quantum dot lasers

Physica status solidi. C, 2009-04, Vol.6 (4), p.948-951

2009

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Bpr-based countermeasures to enhance patient satisfaction--s hospital located in guangzhou case study

Ji, Hai Ming

2011

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A 10 Gb/s Directly-Modulated 1.3 Delta mm InAs/GaAs Quantum-Dot Laser

Chinese physics letters, 2010-03, Vol.27 (3), p.034209-034209

2010

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Characteristic study of maximum modal gain of p-doped 1.3 μm InAs/GaAs quantum dot lasers

Wuli xuebao, 2009, Vol.58 (3), p.1896

2009

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Imaging features of retinal hemangioblastoma: A case report

World journal of clinical cases, 2023, Vol.11 (3), p.692-699

2023

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1.55-µm ultrashort pulse InAs/InP quantum dot mode-locked lasers with high output power

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016, p.1-1

2016

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KIAA1429 regulates cell proliferation by targeting c‐Jun messenger RNA directly in gastric cancer

Journal of cellular physiology, 2020-10, Vol.235 (10), p.7420-7432

2020

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Synthesis and in vitro antitumor activity of 1,3,4-thiadiazole derivatives based on benzisoselenazolone

Chinese chemical letters, 2012-07, Vol.23 (7), p.817-819

2012

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Study on Red Coat Color Gene and Prediction of the Secondary Structure in Chinese Holstein

Agricultural sciences in China, 2008-08, Vol.7 (8), p.1016-1021

2008

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Response of Lettuce to the Coupling Electrical Conductivity and Circulation Rate of the Nutrient Solution in Hydroponics

Journal of life sciences (Libertyville, Ill.), 2017-04, Vol.11 (4)

2017

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Precursors in Short Gamma-Ray Bursts as a Possible Probe of Progenitors

The Astrophysical journal, 2019-10, Vol.884 (1), p.25

2019

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Use of nerve elongator to repair short-distance peripheral nerve defects： a prospective randomized study

Neural regeneration research, 2015, Vol.10 (1), p.79-83

2015

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Enhanced performance of tunable external-cavity 15 μm InAs/InP quantum dot lasers using facet coating

Imaging features of retinal hemangioblastoma: A case report

Single-section mode-locked 1.55-μm InAs/InP quantum dot lasers grown by MOVPE

Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers

Measurement of Linewidth Enhancement Factor for 1.3- \mu InAs/GaAs Quantum Dot Lasers

Two-state-lasing in InAs/InGaAsP/InP quantum dot microcylinder lasers

Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-µm InAs–GaAs Quantum-Dot Lasers

First case of cross-auxiliary double domino donor liver transplantation

Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot LasersSupported by the National Key Research and Development Program of China under Grant No 2016YFB0402302, and the National Natural Science Foundation of China under Grant No 91433206

Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-\mbox{$\mu$m} InAs--GaAs Quantum-Dot Lasers

High Characteristic Temperature 1.3 Delta mm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

Theoretical analysis of modal gain in p-doped 1.3 mum InAs/GaAs quantum dot lasers

Bpr-based countermeasures to enhance patient satisfaction--s hospital located in guangzhou case study

A 10 Gb/s Directly-Modulated 1.3 Delta mm InAs/GaAs Quantum-Dot Laser

Characteristic study of maximum modal gain of p-doped 1.3 μm InAs/GaAs quantum dot lasers

Imaging features of retinal hemangioblastoma: A case report

1.55-µm ultrashort pulse InAs/InP quantum dot mode-locked lasers with high output power

KIAA1429 regulates cell proliferation by targeting c‐Jun messenger RNA directly in gastric cancer

Synthesis and in vitro antitumor activity of 1,3,4-thiadiazole derivatives based on benzisoselenazolone

Study on Red Coat Color Gene and Prediction of the Secondary Structure in Chinese Holstein

Response of Lettuce to the Coupling Electrical Conductivity and Circulation Rate of the Nutrient Solution in Hydroponics

Precursors in Short Gamma-Ray Bursts as a Possible Probe of Progenitors

Use of nerve elongator to repair short-distance peripheral nerve defects： a prospective randomized study

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