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Fabrication and Characterization of a High-Power Assembly With a 20-Junction Monolithically Stacked Laser Power Converter

IEEE journal of photovoltaics, 2018-09, Vol.8 (5), p.1355-1362

2018

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Ultrashort Pulse and High Power Mode-Locked Laser With Chirped InAs/InP Quantum Dot Active Layers

IEEE photonics technology letters, 2016-07, Vol.28 (13), p.1481-1484

2016

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Flat-topped ultrabroad stimulated emission from chirped InAs/InP quantum dot laser with spectral width of 92 nm

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Three-region characteristic temperature in p-doped quantum dot lasers

Applied physics letters, 2014-01, Vol.104 (4)

2014

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2004-nm Ridge-Waveguide Distributed Feedback Lasers With InGaAs Multi-Quantum Wells

IEEE photonics technology letters, 2016-10, Vol.28 (20), p.2257-2260

2016

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Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots

Chinese physics B, 2021-11, Vol.30 (11), p.110201-169

2021

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Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation

AIP advances, 2015-10, Vol.5 (10), p.107115-107115-6

2015

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Theoretical study of the effects of InAs/GaAs quantum dot layer’s position in i-region on current-voltage characteristic in intermediate band solar cells

Applied physics letters, 2012-08, Vol.101 (8), p.81118

2012

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InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

Chinese physics letters, 2013, Vol.30 (6), p.068101-1-068101-3

2013

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Single-section mode-locked 1.55-μm InAs/InP quantum dot lasers grown by MOVPE

Optics communications, 2016-07, Vol.370, p.18-21

2016

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A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range

Chinese physics B, 2013-09, Vol.22 (9), p.446-449

魏恒金鹏罗帅季海铭杨涛李新坤吴剑安琪吴艳华陈红梅王飞飞吴巨王占国

2013

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Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

Applied physics letters, 2015-03, Vol.106 (10)

2015

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Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates

Chinese physics B, 2021-01, Vol.30 (1), p.16102

2021

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The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy

Journal of crystal growth, 2014-06, Vol.396, p.33-37

2014

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Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 μm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design

Chinese physics letters, 2011-04, Vol.28 (4), p.044201

2011

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Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots

Chinese physics letters, 2011-03, Vol.28 (3), p.038401

2011

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Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition

Journal of crystal growth, 2013-07, Vol.375, p.100-103

2013

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Optimizing the double-cap procedure for InAs/InGaAsP/InP quantum dots by metal-organic chemical vapor deposition

2013 International Conference on Indium Phosphide and Related Materials (IPRM), 2013, p.1-2

2013

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A 10 Gb/s Directly-Modulated 1.3 μm InAs/GaAs Quantum-Dot Laser

Chinese physics letters, 2010-03, Vol.27 (3), p.034209, Article 034209

2010

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Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots

Chinese physics B, 2010-08, Vol.19 (8), p.619-627

谷永先杨涛季海铭徐鹏飞王占国

2010

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Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model

Chinese physics B, 2011-07, Vol.20 (7), p.380-386, Article 077301

汪明谷永先季海铭杨涛王占国

2011

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Theoretical analysis of modal gain in p-doped 1.3 μm InAs/GaAs quantum dot lasers

Physica status solidi. C, 2009-04, Vol.6 (4), p.948-951

2009

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High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

Chinese physics letters, 2010-02, Vol.27 (2), p.285-287

季海铭杨涛曹玉莲徐鹏飞谷永先马文全王占国

2010

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Temperature-dependent modulation characteristics for 1.3 μ m InAs/GaAs quantum dot lasers

Journal of applied physics, 2010-01, Vol.107 (1), p.013102-013102-5

2010

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Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers

Chinese physics letters, 2016-12, Vol.33 (12), p.63-67

吕尊仁季海铭杨晓光罗帅高凤许锋杨涛

2016

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Fabrication and Characterization of a High-Power Assembly With a 20-Junction Monolithically Stacked Laser Power Converter

Ultrashort Pulse and High Power Mode-Locked Laser With Chirped InAs/InP Quantum Dot Active Layers

Flat-topped ultrabroad stimulated emission from chirped InAs/InP quantum dot laser with spectral width of 92 nm

Three-region characteristic temperature in p-doped quantum dot lasers

2004-nm Ridge-Waveguide Distributed Feedback Lasers With InGaAs Multi-Quantum Wells

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots

Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation

Theoretical study of the effects of InAs/GaAs quantum dot layer’s position in i-region on current-voltage characteristic in intermediate band solar cells

InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

Single-section mode-locked 1.55-μm InAs/InP quantum dot lasers grown by MOVPE

A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range

Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates

The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy

Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 μm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design

Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots

Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition

Optimizing the double-cap procedure for InAs/InGaAsP/InP quantum dots by metal-organic chemical vapor deposition

A 10 Gb/s Directly-Modulated 1.3 μm InAs/GaAs Quantum-Dot Laser

Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots

Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model

Theoretical analysis of modal gain in p-doped 1.3 μm InAs/GaAs quantum dot lasers

High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

Temperature-dependent modulation characteristics for 1.3 μ m InAs/GaAs quantum dot lasers

Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers

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