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Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

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Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Applied physics letters, 2013-11, Vol.103 (20)

2013

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Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Journal of applied physics, 2017-01, Vol.121 (4)

2017

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Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Vertical Transistors Based on 2D Materials: Status and Prospects

Crystals (Basel), 2018-02, Vol.8 (2), p.70

2018

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Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Nanoscale, 2014-08, Vol.6 (15), p.8671-8680

2014

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Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

Nanomaterials (Basel, Switzerland), 2020-04, Vol.10 (4), p.803

2020

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Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

AIP advances, 2020-12, Vol.10 (12), p.125017-125017-7

2020

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Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Energies (Basel), 2019, Vol.12 (14), p.2655

2019

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Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied physics letters, 2012-10, Vol.101 (17)

2012

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High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

ACS applied electronic materials, 2019-11, Vol.1 (11), p.2342-2354

2019

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Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Applied physics letters, 2012-02, Vol.100 (6), p.063511-063511-4

2012

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Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Nanotechnology, 2014-01, Vol.25 (2), p.025201-8

2014

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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Nanomaterials (Basel, Switzerland), 2021-12, Vol.11 (12), p.3316

2021

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Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

Materials Science Forum, 2016-05, Vol.858, p.1170-1173

2016

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Microstructure and Temperature Dependent Electrical Characteristics of Ohmic Contacts to AlGaN/GaN Heterostructures

Materials science forum, 2015-06, Vol.821-823, p.999-1002

2015

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Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

Materials science forum, 2020-07, Vol.1004, p.725-730

2020

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Determining oxide trapped charges in Al^sub 2^O^sub 3^ insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

Japanese Journal of Applied Physics, 2018-05, Vol.57 (5), p.050307

2018

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Electrical Properties of Graphene Contacts to AlGaN/GaN Heterostructures

Materials science forum, 2015-06, Vol.821-823, p.986-989

2015

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Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

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Extensive Fermi‐Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides

Physica status solidi. PSS-RRL. Rapid research letters, 2020-02, Vol.14 (2), p.n/a

2020

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Trapping States in SiO sub(2)/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

Materials Science Forum, 2016-05, Vol.858, p.1178-1181

2016

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Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures

Materials Science Forum, 2016-05, Vol.858, p.1137-1140

2016

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Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1091-1098

2015

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SpracheEnglisch

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Physics, Applied
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Transistors
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Atomic Force Microscopy
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Contact Resistance
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Ohmic contacts to Gallium Nitride materials

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Vertical Transistors Based on 2D Materials: Status and Prospects

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

Microstructure and Temperature Dependent Electrical Characteristics of Ohmic Contacts to AlGaN/GaN Heterostructures

Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

Determining oxide trapped charges in Al^sub 2^O^sub 3^ insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

Electrical Properties of Graphene Contacts to AlGaN/GaN Heterostructures

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

Extensive Fermi‐Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides

Trapping States in SiO sub(2)/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures

Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality

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