UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 33

Sortiert nach

Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

Link zum Volltext

Verfügbarkeit prüfen

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

Link zum Volltext

Verfügbarkeit prüfen

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Applied physics letters, 2013-11, Vol.103 (20)

2013

Link zum Volltext

Verfügbarkeit prüfen

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Journal of applied physics, 2017-01, Vol.121 (4)

2017

Link zum Volltext

Verfügbarkeit prüfen

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Microelectronic engineering, 2018-02, Vol.187-188, p.66-77

2018

Link zum Volltext

Verfügbarkeit prüfen

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Applied physics letters, 2015-04, Vol.106 (14)

2015

Link zum Volltext

Verfügbarkeit prüfen

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Materials, 2022-01, Vol.15 (3), p.830

2022

Link zum Volltext

Verfügbarkeit prüfen

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2893-2899

2017

Link zum Volltext
IEEE_Xplore

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Nanoscale, 2014-08, Vol.6 (15), p.8671-8680

2014

Link zum Volltext

Verfügbarkeit prüfen

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Applied physics letters, 2022-12, Vol.121 (23)

2022

Link zum Volltext

Verfügbarkeit prüfen

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

Materials, 2021-10, Vol.14 (19), p.5831

2021

Link zum Volltext

Verfügbarkeit prüfen

Challenges for energy efficient wide band gap semiconductor power devices

Physica status solidi. A, Applications and materials science, 2014-09, Vol.211 (9), p.2063-2071

2014

Link zum Volltext

Verfügbarkeit prüfen

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

AIP advances, 2020-12, Vol.10 (12), p.125017-125017-7

2020

Link zum Volltext

Verfügbarkeit prüfen

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied physics letters, 2012-10, Vol.101 (17)

2012

Link zum Volltext

Verfügbarkeit prüfen

Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Crystals (Basel), 2023-09, Vol.13 (9), p.1309

2023

Link zum Volltext

Verfügbarkeit prüfen

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Energies (Basel), 2019, Vol.12 (14), p.2655

2019

Link zum Volltext

Verfügbarkeit prüfen

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Applied physics letters, 2012-02, Vol.100 (6), p.063511-063511-4

2012

Link zum Volltext

Verfügbarkeit prüfen

Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Nanotechnology, 2014-01, Vol.25 (2), p.025201-8

2014

Link zum Volltext

Verfügbarkeit prüfen

Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

Thin solid films, 2014-07, Vol.563, p.50-55

2014

Link zum Volltext

Verfügbarkeit prüfen

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

Nanomaterials (Basel, Switzerland), 2023-11, Vol.13 (21), p.2837

2023

Link zum Volltext

Verfügbarkeit prüfen

Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

Applied surface science, 2014-09, Vol.314, p.546-551

2014

Link zum Volltext

Verfügbarkeit prüfen

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Nanomaterials (Basel, Switzerland), 2021-12, Vol.11 (12), p.3316

2021

Link zum Volltext

Verfügbarkeit prüfen

Microstructure and Temperature Dependent Electrical Characteristics of Ohmic Contacts to AlGaN/GaN Heterostructures

Materials science forum, 2015-06, Vol.821-823, p.999-1002

2015

Link zum Volltext

Verfügbarkeit prüfen

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.n/a

2017

Link zum Volltext

Verfügbarkeit prüfen

Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 33

Suche als RSS-Feed

Aktive Filter

KollektioneBooks on EBSCOhost

ThemaEngineering, Multidisciplinary

SpracheEnglisch

ThemaGallium Nitrides

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(33)
Mit Volltextzugriff
(33)

Publikationsform

Artikel
(33)

Sprache

Japanisch
(8)

Erscheinungsjahr

n.n

Thema

Science & Technology
(28)
Physical Sciences
(27)
Physics
(25)
Physics, Applied
(24)
Aluminum Gallium Nitrides
(23)
Technology
(21)
Heterostructures
(19)
Materials Science
(19)
Materials Science, Multidisciplinary
(16)
Physics, Condensed Matter
(12)
Contact Resistance
(9)
Electrical Properties
(9)
Gan
(9)
Transistors
(9)
Chemistry
(8)
Semiconductor Devices
(8)
Temperature Dependence
(8)
Annealing
(7)
Aluminum
(6)

14 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Ohmic contacts to Gallium Nitride materials

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

Challenges for energy efficient wide band gap semiconductor power devices

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Microstructure and Temperature Dependent Electrical Characteristics of Ohmic Contacts to AlGaN/GaN Heterostructures

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

Aktive Filter

Suchergebnisse filtern