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Flexible High- \kappa/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric
IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3305-3309
2013
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Carrier Transport and Gain Mechanisms in \beta -Ga2O3-Based Metal-Semiconductor-Metal Solar-Blind Schottky Photodetectors
IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2276-2281
2019
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Two-Transistor Metal-Ferroelectric-Metal Field-Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory-Part II: Experiment
IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6268-6272
2023
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Two-Transistor Metal-Ferroelectric-Metal Field- Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory-Part I: Compact Modeling
IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6262-6267
2023
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Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High- \kappa /Metal-Gate Work-Function Variation
IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4780-4785
2018
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Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal- Semiconductor-Metal Photodetectors, Based on Epitaxial GaN/Si(111)
IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.1-7
2023
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An Empirical Investigation on the Effect of Oxygen Vacancy in ZrO2 Thin Film on the Frequency-Dependent Capacitance Degradation in the Metal-Insulator-Metal Capacitor
IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5753-5757
2021
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On the Switching Parameter Variation of Metal-Oxide RRAM-Part I: Physical Modeling and Simulation Methodology
IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1172-1182
2012
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Systematic Study on Aluminum Composition Nonuniformity in Aluminum Gallium Nitride Metal-Semiconductor-Metal Photodetectors
IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4441-4447
2018
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TiO2-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors Deposited by Ultrasonic Spray Pyrolysis Technique
IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.79-85
2016
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Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal-Ferroelectric-Metal Capacitors
IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4744-4749
2022
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High Detectivity of Metal-Semiconductor-Metal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain
IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4362-4365
2022
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Enhanced Charge Extraction in Metal-Perovskite-Metal Back-Contact Solar Cell Structure Through Electrostatic Doping: A Numerical Study
IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1757-1763
2021
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Demonstration of Spectral Selectivity of Efficient and Ultrafast GaN/AlGaN-Based Metal-Semiconductor-Metal Ultraviolet Photodiodes
IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6859-6864
2022
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Electrical Study of Pentacene-Based Metal-Semiconductor-Metal Structure: Schottky Barrier and Active Layer Thickness Effects
IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.5009-5013
2018
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Coexistence of Space Charge Limited and Variable Range Hopping Conduction Mechanism in Sputter-Deposited Au/SiC Metal-Semiconductor-Metal Device
IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.1-6
2023
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Switching Dynamics in Metal-Ferroelectric HfZrO2-Metal Structures
IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.4016-4021
2022
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Atomic Defects Profiling and Reliability of Amorphous Al2O3 Metal-Insulator-Metal Stacks
IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3884-3891
2022
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Improvement in Long-Term and High-Temperature Retention Stability of Ferroelectric Field-Effect Memory Transistors With Metal-Ferroelectric-Metal-Insulator-Semiconductor Gate-Stacks Using Al-Doped HfO2 Thin Films
IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.499-504
2020
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Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors
IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.3001-3004
2020
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On the Switching Parameter Variation of Metal Oxide RRAM-Part II: Model Corroboration and Device Design Strategy
IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1183-1188
2012
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Leakage Current Minimization of TiO2-Based Metal–Insulator–Metal Capacitors Using High-Work-Function In2O3 and V2O5 Ultrathin Interlayers
IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4315
2023
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Noise Characteristics of MgZnO-Based Metal-Semiconductor-Metal Photodetector
IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.983-990
2019
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Schottky Biristor: A Metal-Semiconductor-Metal Bistable Resistor
IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2360-2363
2015
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Threshold Selector and Capacitive Coupled Assist Techniques for Write Voltage Reduction in Metal-Ferroelectric-Metal Field-Effect Transistor
IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6132-6138
2021
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