UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 5.518

Sortiert nach

Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3989-3993

2024

Link zum Volltext

Verfügbarkeit prüfen

P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V

IEEE electron device letters, 2024-06, Vol.45 (6), p.972-975

2024

Link zum Volltext
IEEE_Xplore

1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

IEEE electron device letters, 2024-06, Vol.45 (6), p.1048-1051

2024

Link zum Volltext
IEEE_Xplore

Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD-Compact Model Approach

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3582-3589

2024

Link zum Volltext
IEEE_Xplore

High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs With N₂O Oxidation Treatment

IEEE electron device letters, 2024-06, Vol.45 (6), p.960-963

2024

Link zum Volltext
IEEE_Xplore

A Physics-Based 1-D Equivalent Circuit Model for an AlGaN/GaN HEMT

IEEE transactions on microwave theory and techniques, 2024-05, p.1-9

2024

Link zum Volltext
IEEE_Xplore

2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs

IEEE electron device letters, 2024-05, p.1-1

2024

Link zum Volltext
IEEE_Xplore

Performance Assessment of AlGaN/GaN HEMT for Human Serum Albumin Detection Using Charge Deduction Methodology

IEEE sensors journal, 2024-05, Vol.24 (10), p.15784-15792

2024

Link zum Volltext
IEEE_Xplore

Minimizing Output Capacitance Loss in GaN Power HEMT

IEEE transactions on power electronics, 2024-05, p.1-7

2024

Link zum Volltext
IEEE_Xplore

Virtual-Body p-GaN Gate HEMT With Enhanced Ruggedness Against Hot-Electron-Induced Degradation

IEEE electron device letters, 2024-05, Vol.45 (5), p.770-773

2024

Link zum Volltext
IEEE_Xplore

High On/Off Current Ratio and High Vth/Ron Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.2920-2924

2024

Link zum Volltext
IEEE_Xplore

Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3175-3182

2024

Link zum Volltext
IEEE_Xplore

Assessment and Comparison of Measurement-Based Large-Signal FET Models for GaN HEMTs

IEEE transactions on microwave theory and techniques, 2024-05, Vol.72 (5), p.2692-2703

2024

Link zum Volltext
IEEE_Xplore

Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3096-3101

2024

Link zum Volltext
IEEE_Xplore

Gate Driver Design for SiC Power MOSFETs With a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

IEEE transactions on power electronics, 2024-05, Vol.39 (5), p.5558-5566

2024

Link zum Volltext
IEEE_Xplore

GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection

IEEE electron device letters, 2024-05, Vol.45 (5), p.853-856

2024

Link zum Volltext
IEEE_Xplore

A Two-Stage High-Gain 10-W Capacitively Coupled Distributed Amplifier Using a New Design Method

IEEE microwave and wireless technology letters (Print), 2024-05, Vol.34 (5), p.520-523

2024

Link zum Volltext
IEEE_Xplore

Broadband GaN-Based Power Amplifier MMIC for V-Band With Saturated Output Power Over 2 W

IEEE microwave and wireless technology letters (Print), 2024-05, Vol.34 (5), p.532-535

2024

Link zum Volltext
IEEE_Xplore

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.2943-2949

2024

Link zum Volltext
IEEE_Xplore

Double-Sided Cooling Half-Bridge Power Module of 650 V/150 A Gallium Nitride High-Electron-Mobility Transistor

IEEE transactions on industrial electronics (1982), 2024-04, p.1-9

2024

Link zum Volltext
IEEE_Xplore

Hybrid Double-Side Cooled Package for Multichip GaN Power Module with Optimal Current Sharing at High Switching Speed

IEEE journal of emerging and selected topics in power electronics, 2024-04, p.1-1

2024

Link zum Volltext
IEEE_Xplore

Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs

Micromachines (Basel), 2024-04, Vol.15 (5), p.571

2024

Link zum Volltext

Verfügbarkeit prüfen

A > 120-GHz Bandwidth, > 20-dBm Pout, $ 6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology

IEEE transactions on microwave theory and techniques, 2024-04, p.1-9

2024

Link zum Volltext

Verfügbarkeit prüfen

Analysis of the Influence of Temperature on Stress Waves of Cascode GaN HEMT

IEEE sensors journal, 2024-04, Vol.24 (8), p.1-1

2024

Link zum Volltext
IEEE_Xplore

Advancements in 300 mm GaN-on-Si Technology With Industry's First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors

IEEE microwave and wireless technology letters (Print), 2024-04, p.1-4

2024

Link zum Volltext
IEEE_Xplore

1 – 25 von 5.518

Suche als RSS-Feed

Aktive Filter

KollektionWorld Scientific eBooks

ThemaHemts

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(2.025)
Mit Volltextzugriff
(4.473)

Publikationsform

Sprache

Englisch
(5.518)
Japanisch
(531)
Russisch
(4)
Türkisch
(2)
Chinesisch
(1)

Erscheinungsjahr

n.n

Thema

Gallium Nitride
(4.510)
Science & Technology
(3.091)
Technology
(3.075)
Modfets
(3.063)
Engineering
(3.027)
Engineering, Electrical & Electronic
(3.019)
Aluminum Gallium Nitride
(2.448)
Logic Gates
(2.155)
Gallium Nitrides
(1.530)
High Electron Mobility Transistors
(1.325)
Semiconductor Devices
(1.130)
Physical Sciences
(1.064)
Physics
(1.037)
Wide Band Gap Semiconductors
(983)
Physics, Applied
(922)
Aluminum Gallium Nitrides
(856)
Gan
(797)
Transistors
(728)
Power Amplifiers
(719)

14 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications

P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V

1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD-Compact Model Approach

High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs With N₂O Oxidation Treatment

A Physics-Based 1-D Equivalent Circuit Model for an AlGaN/GaN HEMT

2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs

Performance Assessment of AlGaN/GaN HEMT for Human Serum Albumin Detection Using Charge Deduction Methodology

Minimizing Output Capacitance Loss in GaN Power HEMT

Virtual-Body p-GaN Gate HEMT With Enhanced Ruggedness Against Hot-Electron-Induced Degradation

High On/Off Current Ratio and High Vth/Ron Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor

Assessment and Comparison of Measurement-Based Large-Signal FET Models for GaN HEMTs

Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy

Gate Driver Design for SiC Power MOSFETs With a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection

A Two-Stage High-Gain 10-W Capacitively Coupled Distributed Amplifier Using a New Design Method

Broadband GaN-Based Power Amplifier MMIC for V-Band With Saturated Output Power Over 2 W

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

Double-Sided Cooling Half-Bridge Power Module of 650 V/150 A Gallium Nitride High-Electron-Mobility Transistor

Hybrid Double-Side Cooled Package for Multichip GaN Power Module with Optimal Current Sharing at High Switching Speed

Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs

A > 120-GHz Bandwidth, > 20-dBm Pout, $ 6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology

Analysis of the Influence of Temperature on Stress Waves of Cascode GaN HEMT

Advancements in 300 mm GaN-on-Si Technology With Industry's First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors

Aktive Filter

Suchergebnisse filtern