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GaN-on-Si Power Technology: Devices and Applications

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795

2017

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IEEE_Xplore

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3060-3066

2013

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IEEE_Xplore

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

IEEE electron device letters, 2020-08, Vol.41 (8), p.1177-1180

2020

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IEEE_Xplore

Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection

IEEE transactions on power electronics, 2016-01, Vol.31 (1), p.601-612

2016

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IEEE_Xplore

Characterization of Threshold Voltage Instability Under Off-State Drain Stress and Its Impact on p-GaN HEMT Performance

IEEE journal of emerging and selected topics in power electronics, 2021-08, Vol.9 (4), p.4026-4035

2021

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IEEE_Xplore

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.707-719

2016

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IEEE_Xplore

10 MHz-Switching on GaN Trench CAVET up to 300 °C Operation Enabled by High Channel Mobility

IEEE electron device letters, 2024-04, Vol.45 (4), p.653-656

2024

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IEEE_Xplore

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

IEEE electron device letters, 2011-11, Vol.32 (11), p.1525-1527

2011

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IEEE_Xplore

Design of GaN-Based MHz Totem-Pole PFC Rectifier

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.799-807

2016

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IEEE_Xplore

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

IEEE electron device letters, 2019-02, Vol.40 (2), p.275-278

2019

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IEEE_Xplore

Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3558-3563

2020

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IEEE_Xplore

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.45-50

2018

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IEEE_Xplore

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4578-4590

2019

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Evaluation and Application of 600 V GaN HEMT in Cascode Structure

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2453-2461

2014

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IEEE_Xplore

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

IEEE electron device letters, 2015-10, Vol.36 (10), p.1001-1003

2015

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IEEE_Xplore

Numerical Simulation and Analytical Modeling of Multichannel AlGaN/GaN Devices

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1710-1717

2024

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Verfügbarkeit prüfen

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.2982-2996

2013

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IEEE_Xplore

Research on Losses of PCB Parasitic Capacitance for GaN-Based Full Bridge Converters

IEEE transactions on power electronics, 2021-04, Vol.36 (4), p.4287-4299

2021

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IEEE_Xplore

Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression

IEEE transactions on power electronics, 2022-05, Vol.37 (5), p.5491-5500

2022

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IEEE_Xplore

A Monolithic GaN-IC With Integrated Control Loop for 400-V Offline Buck Operation Achieving 95.6% Peak Efficiency

IEEE journal of solid-state circuits, 2020-12, Vol.55 (12), p.3169-3178

2020

Link zum Volltext
IEEE_Xplore

Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier With Low Turn-On Voltage

IEEE electron device letters, 2020-07, Vol.41 (7), p.993-996

2020

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IEEE_Xplore

GaN Power Transistors on Si Substrates for Switching Applications

Proceedings of the IEEE, 2010-07, Vol.98 (7), p.1151-1161

2010

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IEEE_Xplore

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

IEEE transactions on power electronics, 2021-07, Vol.36 (7), p.7412-7416

2021

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IEEE_Xplore

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1798-1804

2022

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IEEE_Xplore

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-5

2023

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IEEE_Xplore

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GaN-on-Si Power Technology: Devices and Applications

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection

Characterization of Threshold Voltage Instability Under Off-State Drain Stress and Its Impact on p-GaN HEMT Performance

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

10 MHz-Switching on GaN Trench CAVET up to 300 °C Operation Enabled by High Channel Mobility

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

Design of GaN-Based MHz Totem-Pole PFC Rectifier

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Evaluation and Application of 600 V GaN HEMT in Cascode Structure

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Numerical Simulation and Analytical Modeling of Multichannel AlGaN/GaN Devices

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

Research on Losses of PCB Parasitic Capacitance for GaN-Based Full Bridge Converters

Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression

A Monolithic GaN-IC With Integrated Control Loop for 400-V Offline Buck Operation Achieving 95.6% Peak Efficiency

Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier With Low Turn-On Voltage

GaN Power Transistors on Si Substrates for Switching Applications

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

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