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Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2021-02, Vol.129 (8)

2021

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Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-01, Vol.35 (1)

2017

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Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method

Applied physics letters, 2024-03, Vol.124 (10)

2024

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First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments

Japanese Journal of Applied Physics, 2021-08, Vol.60 (8), p.85503

2021

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Band offset of Al1−xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S)

2017

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Goniometric and topographic characterization of synthetic IIa diamonds

Journal of physics. D, Applied physics, 2005-05, Vol.38 (10A), p.A61-A66

2005

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Valence transition of YbInCu4 observed in hard X-ray photoemission spectra

Physical review letters, 2004-12, Vol.93 (24), p.246404.1-246404.4

2004

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Reduction of peak electric field strength in GaN-HEMT with carbon doping layer

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.915-918

2012

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Topography simulation of BiCS memory hole etching modeled by elementary experiments of SiO2 and Si etching

2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.45-48

2010

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Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy

Japanese Journal of Applied Physics, 2004-08, Vol.43 (8A), p.L1029

2004

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Nearly perfect large-area quartz: 4 meV resolution for 10 keV photons over 10 cm2

Journal of synchrotron radiation, 2006-05, Vol.13 (3), p.278-280

2006

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Progress of Design and R&D of Water Cooled Solid Breeder Test Blanket Module

Fusion science and technology, 2009-08, Vol.56 (2), p.875-882

2009

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Nearly perfect large-area quartz: 4 meV resolution for 10 keV photons over 10 cm(2)

Journal of synchrotron radiation, 2006-05, Vol.13 (Pt 3), p.278-280

2006

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Visualization of Strain-Induced Phase Breakdown in Austenite Stainless Steel Using a Scanning Hall-Sensor Microscope

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 8), p.5463-5466

2002

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Optical Characteristics of Ultrathin Oligosilane Films Prepared by Molecular Beam Deposition Method

Japanese Journal of Applied Physics, 1998-08, Vol.37 (Part 2, No. 8A), p.L953-L955

1998

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Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors

Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device

Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method

First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments

Band offset of Al1−xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy

Goniometric and topographic characterization of synthetic IIa diamonds

Valence transition of YbInCu4 observed in hard X-ray photoemission spectra

Reduction of peak electric field strength in GaN-HEMT with carbon doping layer

Topography simulation of BiCS memory hole etching modeled by elementary experiments of SiO2 and Si etching

Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy

Nearly perfect large-area quartz: 4 meV resolution for 10 keV photons over 10 cm2

Progress of Design and R&D of Water Cooled Solid Breeder Test Blanket Module

Nearly perfect large-area quartz: 4 meV resolution for 10 keV photons over 10 cm(2)

Visualization of Strain-Induced Phase Breakdown in Austenite Stainless Steel Using a Scanning Hall-Sensor Microscope

Optical Characteristics of Ultrathin Oligosilane Films Prepared by Molecular Beam Deposition Method

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