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A comparative study of the interaction of nickel, titanium, palladium, and gold metals with single-walled carbon nanotubes: A DFT approach

Results in physics, 2019-03, Vol.12, p.2100-2106

2019

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The effect of NaOH catalyst concentration and extraction time on the yield and properties of Citrullus vulgaris seed oil as a potential biodiesel feed stock

South African journal of chemical engineering, 2018-06, Vol.25 (1), p.98-102

2018

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Single-Walled boron nitride nanotubes interaction with nickel, titanium, palladium, and gold metal atoms- A first-principles study

Results in materials, 2019-09, Vol.2, p.100029, Article 100029

2019

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A study of polybromide chain formation using carbon nanomaterials via density functional theory approach

Cogent engineering, 2016-12, Vol.3 (1), p.1261509

2016

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Nickel-silicide process for ultra-thin-body SOI-MOSFETs

Microelectronic engineering, 2005-12, Vol.82 (3), p.497-502

2005

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Structural and Electronic properties of PVK/C60 Nanoheterostructure interfaces- A DFT Approach

Surfaces and interfaces, 2020-09, Vol.20, p.100556, Article 100556

2020

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Industrial Applications of Clay Materials from Ghana (A Review)

Oriental journal of chemistry, 2018-01, Vol.34 (4), p.1719-1734

2018

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Industrial Applications of Clay Materials from Ghana - A Review

Oriental journal of chemistry, 2018-08, Vol.34 (4), p.1719-1734

2018

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Nanoscale TiN metal gate technology for CMOS integration

Microelectronic engineering, 2006-04, Vol.83 (4), p.1551-1554

2006

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Ghana's quest for oil and gas: ecological risks and management frameworks

West African journal of applied ecology, 2012-01, Vol.20 (1), p.57

2012

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CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

Solid-state electronics, 2006-06, Vol.50 (6), p.979-985

2006

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Highly selective etch process for silicon-on-insulator nano-devices

Microelectronic engineering, 2005-03, Vol.78 (SI), p.212-217

2005

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Processing and evaluation of metal gate/high-κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-κ dielectric

Microelectronic engineering, 2007-05, Vol.84 (5-8), p.1635-1638

2007

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Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd 2O 3) and titanium nitride (TiN) electrodes

Solid-state electronics, 2007, Vol.51 (4), p.617-621

2007

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Introduction of crystalline high- k gate dielectrics in a CMOS process

Journal of non-crystalline solids, 2005-07, Vol.351 (21), p.1885-1889

2005

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Processing and evaluation of metal gate/high- κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO 2 and HfO 2 as high- κ dielectric

Microelectronic engineering, 2007, Vol.84 (5), p.1635-1638

2007

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Low-temperature conductance measurements of surface states in HfO2-Si structures with different gate materials

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.980-984

2006

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0.86-nm CET Gate Stacks With Epitaxial High- Dielectrics and FUSI NiSi Metal Electrodes

IEEE electron device letters, 2006-10, Vol.27 (10), p.814

2006

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0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes

IEEE electron device letters, 2006-10, Vol.27 (10), p.814-816

2006

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0.86-nm CET Gate Stacks With Epitaxial hboxGd2hboxO3High- kDielectrics and FUSI NiSi Metal Electrodes

IEEE electron device letters, 2006-10, Vol.27 (10), p.814-816

2006

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Comparison of metal gate electrodes on MOCVD HfO2

Microelectronics and reliability, 2005-05, Vol.45 (5-6), p.953-956

2005

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Investigation of high-K gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET = 0.86 nm

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.904-908

2006

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Investigation of NiAlN as gate-material for submicron CMOS technology

Microelectronic engineering, 2004-10, Vol.76 (1-4), p.354-359

2004

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Comparison of metal gate electrodes on MOCVD HfO 2

Microelectronics and reliability, 2005, Vol.45 (5), p.953-956

2005

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Low-temperature conductance measurements of surface states in HfO 2–Si structures with different gate materials

Materials science in semiconductor processing, 2006, Vol.9 (6), p.980-984

2006

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A comparative study of the interaction of nickel, titanium, palladium, and gold metals with single-walled carbon nanotubes: A DFT approach

The effect of NaOH catalyst concentration and extraction time on the yield and properties of Citrullus vulgaris seed oil as a potential biodiesel feed stock

Single-Walled boron nitride nanotubes interaction with nickel, titanium, palladium, and gold metal atoms- A first-principles study

A study of polybromide chain formation using carbon nanomaterials via density functional theory approach

Nickel-silicide process for ultra-thin-body SOI-MOSFETs

Structural and Electronic properties of PVK/C60 Nanoheterostructure interfaces- A DFT Approach

Industrial Applications of Clay Materials from Ghana (A Review)

Industrial Applications of Clay Materials from Ghana - A Review

Nanoscale TiN metal gate technology for CMOS integration

Ghana's quest for oil and gas: ecological risks and management frameworks

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

Highly selective etch process for silicon-on-insulator nano-devices

Processing and evaluation of metal gate/high-κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-κ dielectric

Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd 2O 3) and titanium nitride (TiN) electrodes

Introduction of crystalline high- k gate dielectrics in a CMOS process

Processing and evaluation of metal gate/high- κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO 2 and HfO 2 as high- κ dielectric

Low-temperature conductance measurements of surface states in HfO2-Si structures with different gate materials

0.86-nm CET Gate Stacks With Epitaxial High- Dielectrics and FUSI NiSi Metal Electrodes

0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes

0.86-nm CET Gate Stacks With Epitaxial hboxGd2hboxO3High- kDielectrics and FUSI NiSi Metal Electrodes

Comparison of metal gate electrodes on MOCVD HfO2

Investigation of high-K gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET = 0.86 nm

Investigation of NiAlN as gate-material for submicron CMOS technology

Comparison of metal gate electrodes on MOCVD HfO 2

Low-temperature conductance measurements of surface states in HfO 2–Si structures with different gate materials

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