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Interface roughness evolution in sputtered WSi2∕Si multilayers

Journal of applied physics, 2007-01, Vol.101 (2)

2007

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Complex and incommensurate ordering in Al0.72Ga0.28N thin films grown by plasma-assisted molecular beam epitaxy

Applied physics letters, 2006-05, Vol.88 (18)

2006

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Real-time x-ray studies of gallium adsorption and desorption

Journal of applied physics, 2006-10, Vol.100 (8), p.084307-084307-6

2006

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Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Journal of applied physics, 2016-04, Vol.119 (15)

2016

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Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films

Applied physics letters, 2010-12, Vol.97 (25), p.252108

2010

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Optical conductivity of Ni1 − xPtx alloys (0<x<0.25) from 0.76 to 6.6 eV

AIP advances, 2014-01, Vol.4 (1), p.017102-017102-12

2014

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Real-time x-ray studies of Mo-seeded Si nanodot formation during ion bombardment

Applied physics letters, 2005-10, Vol.87 (16)

2005

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Real-time studies of gallium adsorption and desorption kinetics on sapphire (0001) by grazing incidence small-angle x-ray scattering and x-ray fluorescence

Journal of applied physics, 2008-05, Vol.103 (10), p.103538-103538-8

2008

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Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy

Journal of applied physics, 2007-10, Vol.102 (7)

2007

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GaN quantum dot superlattices grown by molecular beam epitaxy at high temperature

Journal of applied physics, 2007-10, Vol.102 (7)

2007

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Interface roughness evolution in sputtered W Si 2 ∕ Si multilayers

Journal of applied physics, 2007-01, Vol.101 (2), p.023503-023503-6

2007

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GaN quantum dot superlattices grown by molecular beam epitaxyat high temperature

Journal of applied physics, 2007-10, Vol.102 (7), p.073517-073517-7

2007

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Real-time x-ray studies of gallium nitride nanodot formationby droplet heteroepitaxy

Journal of applied physics, 2007-10, Vol.102 (7), p.073522-073522-9

2007

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Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

Applied physics letters, 2013-04, Vol.102 (17)

2013

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Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

Applied physics letters, 2013-04, Vol.102 (17)

2013

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Complex and incommensurate ordering in Al 0.72 Ga 0.28 N thin filmsgrown by plasma-assisted molecular beam epitaxy

Applied physics letters, 2006-05, Vol.88 (18), p.181915-181915-3

2006

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Real-time x-ray studies of Mo-seeded Si nanodot formation duringion bombardment

Applied physics letters, 2005-10, Vol.87 (16), p.163104-163104-3

2005

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Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Journal of applied physics, 2016-04, Vol.119 (15)

2016

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Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Journal of applied physics, 2016-04, Vol.119 (15)

2016

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Optical conductivity of Ni1− x Pt x Si monosilicides (0 < x < 0.3) from spectroscopic ellipsometry

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2014-09, Vol.32 (5)

2014

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Axiotaxy of CoSi2 thin films on Si(100) substrates and the effects of Ti alloying

Journal of applied physics, 2004-06, Vol.95 (12), p.8376-8381

2004

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Exploitation of a self-limiting process for reproducible formationof ultrathin Ni 1 − x Pt x silicide films

Applied physics letters, 2010-12, Vol.97 (25), p.252108-252108-3

2010

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Optical conductivity of Ni{sub 1−x}Pt{sub x} alloys (0<x<0.25) from 0.76 to 6.6 eV

AIP advances, 2014-01, Vol.4 (1)

2014

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Optical conductivity of Ni1 − x Pt x alloys (0<x<0.25) from 0.76 to 6.6 eV

AIP advances, 2014-01, Vol.4 (1)

2014

Volltextzugriff (PDF)

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni 1−x Pt x silicide films

Applied physics letters, 2010, Vol.97 (25), p.252108

2010

Volltextzugriff (PDF)

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Interface roughness evolution in sputtered WSi2∕Si multilayers

Complex and incommensurate ordering in Al0.72Ga0.28N thin films grown by plasma-assisted molecular beam epitaxy

Real-time x-ray studies of gallium adsorption and desorption

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films

Optical conductivity of Ni1 − xPtx alloys (0<x<0.25) from 0.76 to 6.6 eV

Real-time x-ray studies of Mo-seeded Si nanodot formation during ion bombardment

Real-time studies of gallium adsorption and desorption kinetics on sapphire (0001) by grazing incidence small-angle x-ray scattering and x-ray fluorescence

Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy

GaN quantum dot superlattices grown by molecular beam epitaxy at high temperature

Interface roughness evolution in sputtered W Si 2 ∕ Si multilayers

GaN quantum dot superlattices grown by molecular beam epitaxyat high temperature

Real-time x-ray studies of gallium nitride nanodot formationby droplet heteroepitaxy

Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

Complex and incommensurate ordering in Al 0.72 Ga 0.28 N thin filmsgrown by plasma-assisted molecular beam epitaxy

Real-time x-ray studies of Mo-seeded Si nanodot formation duringion bombardment

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Optical conductivity of Ni1− x Pt x Si monosilicides (0 < x < 0.3) from spectroscopic ellipsometry

Axiotaxy of CoSi2 thin films on Si(100) substrates and the effects of Ti alloying

Exploitation of a self-limiting process for reproducible formationof ultrathin Ni 1 − x Pt x silicide films

Optical conductivity of Ni{sub 1−x}Pt{sub x} alloys (0<x<0.25) from 0.76 to 6.6 eV

Optical conductivity of Ni1 − x Pt x alloys (0<x<0.25) from 0.76 to 6.6 eV

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni 1−x Pt x silicide films

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