UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 217.457

Sortiert nach

0.026µm2 high performance Embedded DRAM in 22nm technology for server and SOC applications

2014 IEEE International Electron Devices Meeting, 2014, p.19.4.1-19.4.4

2014

Link zum Volltext
IEEE_Xplore

A 0.1-micron gate Al(0.5)In(0.5)As/Ga(0.5)In(0.5)As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35, p.818-823

1988

Link zum Volltext

Verfügbarkeit prüfen

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

IEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218

2007

Link zum Volltext

Verfügbarkeit prüfen

A 0.1-[mu]m 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

IEEE journal of solid-state circuits, 2007-01, Vol.42 (1), p.210-218

2007

Link zum Volltext

Verfügbarkeit prüfen

A 0.1- mu m gate Al sub(0.5)As/Ga sub(0.5)In sub(0.5)As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-01, Vol.35 (7), p.818-823

1988

Link zum Volltext

Verfügbarkeit prüfen

A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.818-823

1988

Link zum Volltext
IEEE_Xplore

A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

GaAs IC Symposium Technical Digest 1992, 1992, p.71-74

1992

Link zum Volltext
IEEE_Xplore

A 0.1-μm gate Al0.5In0.5As/Ga0.5In0.5As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.818-823

1988

Link zum Volltext

Verfügbarkeit prüfen

0-100. Preliminary in vitro studies of electrical impedance mammography (EIM): a future technique for non-invasive breast tissue imaging?

Breast (Edinburgh), 1997-08, Vol.6 (4), p.253-253, Article 253

1997

Link zum Volltext

Verfügbarkeit prüfen

A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications

2006 International Electron Devices Meeting, 2006, p.1-4

2006

Link zum Volltext
IEEE_Xplore

A 0.15 /spl mu/m CMOS foundry technology with 0.1 /spl mu/m devices for high performance applications

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104), 2000, p.146-147

2000

Link zum Volltext
IEEE_Xplore

0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.401-404

2012

Link zum Volltext
IEEE_Xplore

0.18-μm CMOS push-pull power amplifier with antenna in IC package

IEEE microwave and wireless components letters, 2004-01, Vol.14 (1), p.13-15

2004

Link zum Volltext
IEEE_Xplore

0.25-micron gate millimeter-wave ion-implanted GaAs MESFET's

IEEE electron device letters, 1989-05, Vol.10, p.186-188

1989

Link zum Volltext

Verfügbarkeit prüfen

0.25- mu m pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technology

IEEE transactions on electron devices, 1992-12, Vol.39 (12), p.2701-2706

1992

Link zum Volltext
IEEE_Xplore

0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

IEEE electron device letters, 1989-05, Vol.10 (5), p.186-188

1989

Link zum Volltext
IEEE_Xplore

0.35% absolute efficiency gain of bifacial N-type Si solar cells by industrial Metal Wrap Through Technology

2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.002289-002291

2012

Link zum Volltext
IEEE_Xplore

A 0.35 μm SiGe BiCMOS technology for power amplifier applications

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2007, p.198-201

2007

Link zum Volltext
IEEE_Xplore

In(0.5)(Al(x)Ga(1-x))(0.5) HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1404-1412

1999

Link zum Volltext

Verfügbarkeit prüfen

A 0.5 km concurrent testable chip of a fifth-order g sub m-C filter

Analog integrated circuits and signal processing, 2002-09, Vol.32 (3), p.231-247

2002

Link zum Volltext

Verfügbarkeit prüfen

0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

Link zum Volltext
IEEE_Xplore

A 0.65V, 1.9mW CMOS low-noise amplifier at 5GHz

Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05), 2005, p.247-251

2005

Link zum Volltext
IEEE_Xplore

A 0.7-1.4 GHz Variable Band Low Noise Amplifier for Multi-band Applications

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.1547-1549

2006

Link zum Volltext
IEEE_Xplore

0.7 W X-Ku-band high-gain, high-efficiency common base power HBT

IEEE microwave and guided wave letters, 1991-09, Vol.1 (9), p.258-260

1991

Link zum Volltext
IEEE_Xplore

0.7 WX-Ku-band high-gain, high-efficiency common base power HBT

IEEE microwave and guided wave letters, 1991-01, Vol.1 (9), p.258-260

1991

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 217.457

Suche als RSS-Feed

Aktive Filter

KollektionWiley Online Library All Journals

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(176.674)
Mit Volltextzugriff
(197.483)

Publikationsform

8 weitere anzeigen...

Weniger anzeigen...

Sprache

Englisch
(208.117)
Japanisch
(22.400)
Chinesisch
(9.438)
Portugiesisch
(172)
Russisch
(146)
Koreanisch
(112)
Deutsch
(105)
Französisch
(101)
Norwegisch
(90)
Spanisch
(27)
Tschechisch
(20)
Slowakisch
(20)
Polnisch
(14)
Niederländisch
(9)
Italienisch
(6)
Croatian
(4)
Persisch
(2)
Estnisch
(1)
Latein
(1)
Lettisch
(1)

15 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(154.143)
Life Sciences & Biomedicine
(65.646)
Technology
(62.089)
Physical Sciences
(50.126)
Humans
(41.199)
Physics
(30.731)
Engineering
(27.964)
Exact Sciences And Technology
(26.113)
Male
(23.403)
Animals
(23.254)
Materials Science
(23.235)
Female
(22.328)
Biological And Medical Sciences
(20.942)
Materials Science, Multidisciplinary
(18.019)
Computer Science
(17.345)
Chemistry
(16.841)
Engineering, Electrical & Electronic
(13.818)
Medical Sciences
(13.202)
Applied Sciences
(13.005)
Physics, Applied
(12.855)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

IngentaConnect
(97.135)
EZB Free E-Journals
(73.090)
MEDLINE
(63.875)
Elsevier ScienceDirect Journals Complete
(52.679)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(33.061)
IngentaConnect Journals
(32.483)
Publisher's website
(30.078)
Journals@Ovid Complete
(29.717)
IEL
(19.279)
Springer Nature - Complete Springer Journals
(18.654)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(11.761)
American Physical Society Journals
(8.052)
PROLA
(6.814)
Nature International Weekly Journal of Science
(5.910)
Springer Book Series
(5.730)
Taylor & Francis
(5.688)
Ebook Central Perpetual and DDA
(5.637)
Taylor & Francis Journals Complete
(5.603)
eBooks on EBSCOhost
(5.563)
AIP Journals Complete
(5.315)
Wiley Online Library - AutoHoldings Journals
(0)

16 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Physical Review Letters
(3.133)
Applied Physics Letters
(2.361)
Journal Of Applied Physics
(1.702)
Journal Of Alloys And Compounds
(1.235)
The Journal Of Biological Chemistry
(1.176)
Proceedings Of The National Academy Of Sciences - Pnas
(1.128)
Physics Letters. B
(1.103)
Cancer Research
(1.067)
Plos One
(1.054)
Chinese Medical Journal
(1.024)

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

0.026µm2 high performance Embedded DRAM in 22nm technology for server and SOC applications

A 0.1-micron gate Al(0.5)In(0.5)As/Ga(0.5)In(0.5)As MODFET fabricated on GaAs substrates

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

A 0.1-[mu]m 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

A 0.1- mu m gate Al sub(0.5)As/Ga sub(0.5)In sub(0.5)As MODFET fabricated on GaAs substrates

A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

A 0.1-μm gate Al0.5In0.5As/Ga0.5In0.5As MODFET fabricated on GaAs substrates

0-100. Preliminary in vitro studies of electrical impedance mammography (EIM): a future technique for non-invasive breast tissue imaging?

A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications

A 0.15 /spl mu/m CMOS foundry technology with 0.1 /spl mu/m devices for high performance applications

0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

0.18-μm CMOS push-pull power amplifier with antenna in IC package

0.25-micron gate millimeter-wave ion-implanted GaAs MESFET's

0.25- mu m pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technology

0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

0.35% absolute efficiency gain of bifacial N-type Si solar cells by industrial Metal Wrap Through Technology

A 0.35 μm SiGe BiCMOS technology for power amplifier applications

In(0.5)(Al(x)Ga(1-x))(0.5) HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

A 0.5 km concurrent testable chip of a fifth-order g sub m-C filter

0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

A 0.65V, 1.9mW CMOS low-noise amplifier at 5GHz

A 0.7-1.4 GHz Variable Band Low Noise Amplifier for Multi-band Applications

0.7 W X-Ku-band high-gain, high-efficiency common base power HBT

0.7 WX-Ku-band high-gain, high-efficiency common base power HBT

Aktive Filter

Suchergebnisse filtern