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Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- k CMOSFETs

IEEE electron device letters, 2009-05, Vol.30 (5), p.466-468

2009

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Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

Journal of applied physics, 2011-02, Vol.109 (3)

2011

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Capsule endoscopy findings in intestinal follicular lymphoma

Endoscopy, 2007-12, Vol.39 (S 1), p.E86-E87

2007

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Proposal of Single Metal/Dual High- k Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.85-92

2009

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A case of multiple carcinoid tumors of the small intestine

Endoscopy, 2009-11, Vol.41 Suppl 2, p.E299

2009

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Three-Dimensional Observation of Edge-Roughness on Poly-Si/TiN Stacked Gate Using Three-Dimensional STEM

Microscopy and microanalysis, 2009-07, Vol.15 (S2), p.634-635

2009

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Compact modeling of a flash memory cell including substrate-bias-dependent hot-electron gate current

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1726-1733

2004

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Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region

2010 Symposium on VLSI Technology, 2010, p.33-34

2010

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Clinical impact of genetic aberrations in gastric MALT lymphoma: a comprehensive analysis using interphase fluorescence in situ hybridisation

Gut, 2007-10, Vol.56 (10), p.1358-1363

2007

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Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing [DRAM dielectric]

IEEE electron device letters, 1996-09, Vol.17 (9), p.431-433

1996

Volltextzugriff (PDF)

Positronium formation in SiO2 films grown on Si substrates studied by monoenergetic positron beams

Journal of applied physics, 1994-04, Vol.75 (8), p.3822-3828

1994

Volltextzugriff (PDF)

Probe EUS for the diagnosis of invasion depth in superficial esophageal cancer: a comparison between a jelly-filled method and a water-filled balloon method

Gastrointestinal endoscopy, 2006-03, Vol.63 (3), p.389-395

2006

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Simulation of Drain Current Reduction Caused by Process-Induced Stress

2005 International Conference On Simulation of Semiconductor Processes and Devices, 2005, p.199-202

2005

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Hot-electron hardened Si-gate MOSFET utilizing F implantation

IEEE electron device letters, 1989-04, Vol.10 (4), p.141-143

1989

Volltextzugriff (PDF)

Proposal of Single Metal/Dual High-[Formula Omitted] Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.85-92

2009

Volltextzugriff (PDF)

Depth and lateral resolution of laser-assisted atom probe microscopyof silicon revealed by isotopic heterostructures

Journal of applied physics, 2011-02, Vol.109 (3), p.036102-036102-3

2011

Volltextzugriff (PDF)

Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- k FETs

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.1042-1049

2008

Volltextzugriff (PDF)

Stoichiometry measurement and electric characteristics of thin-film Ta2O5 insulator for ultra-large-scale integration

Journal of applied physics, 1993-07, Vol.74 (1), p.375-380

1993

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Positron annihilation in SiO2/Si structure at low temperature

Journal of applied physics, 1995-09, Vol.78 (5), p.3269-3273

1995

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Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- [Formula Omitted] CMOSFETs

IEEE electron device letters, 2009-05, Vol.30 (5), p.466

2009

Volltextzugriff (PDF)

NBT-induced hot carrier (HC) effect: positive feedback mechanism in p-MOSFET's degradation

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002, p.79-85

2002

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Positron annihilation in a metal-oxide semiconductor studied by using a pulsed monoenergetic positron beam

Journal of applied physics, 1993-12, Vol.74 (12), p.7251-7256

1993

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256-Mb DRAM circuit technologies for file applications

IEEE journal of solid-state circuits, 1993-11, Vol.28 (11), p.1105-1113

1993

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Impact of boron penetration from S/D-extension on gate-oxide reliability for 65-nm node CMOS and beyond

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.136-137

2004

Volltextzugriff (PDF)

Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- [Formula Omitted] FETs

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.1042-1049

2008

Volltextzugriff (PDF)

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Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- k CMOSFETs

Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

Capsule endoscopy findings in intestinal follicular lymphoma

Proposal of Single Metal/Dual High- k Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

A case of multiple carcinoid tumors of the small intestine

Three-Dimensional Observation of Edge-Roughness on Poly-Si/TiN Stacked Gate Using Three-Dimensional STEM

Compact modeling of a flash memory cell including substrate-bias-dependent hot-electron gate current

Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region

Clinical impact of genetic aberrations in gastric MALT lymphoma: a comprehensive analysis using interphase fluorescence in situ hybridisation

Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing [DRAM dielectric]

Positronium formation in SiO2 films grown on Si substrates studied by monoenergetic positron beams

Probe EUS for the diagnosis of invasion depth in superficial esophageal cancer: a comparison between a jelly-filled method and a water-filled balloon method

Simulation of Drain Current Reduction Caused by Process-Induced Stress

Hot-electron hardened Si-gate MOSFET utilizing F implantation

Proposal of Single Metal/Dual High-[Formula Omitted] Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

Depth and lateral resolution of laser-assisted atom probe microscopyof silicon revealed by isotopic heterostructures

Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- k FETs

Stoichiometry measurement and electric characteristics of thin-film Ta2O5 insulator for ultra-large-scale integration

Positron annihilation in SiO2/Si structure at low temperature

Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- [Formula Omitted] CMOSFETs

NBT-induced hot carrier (HC) effect: positive feedback mechanism in p-MOSFET's degradation

Positron annihilation in a metal-oxide semiconductor studied by using a pulsed monoenergetic positron beam

256-Mb DRAM circuit technologies for file applications

Impact of boron penetration from S/D-extension on gate-oxide reliability for 65-nm node CMOS and beyond

Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- [Formula Omitted] FETs

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