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Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-pérot lasers, operating at 10-Gb/s, up to 110 °C, with constant current swing

Journal of lightwave technology, 2006, Vol.24 (1), p.143-149

2006

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A Study of Degradation in High Power Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers as Pump Lasers

MRS proceedings, 2009, Vol.1195 (1), p.71-77, Article 1195-B01-06

2009

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Reliability of High-Temperature Operation for GaN-Based Operational Amplifiers

MRS proceedings, 2010, Vol.1195 (1), p.196-199

2010

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Reliability and Performance of Pseudomorphic Ultraviolet Light Emitting Diodes on Bulk Aluminum Nitride Substrates

MRS proceedings, 2009, Vol.1195 (1), p.125-130, Article 1195-B03-04

2009

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Modifications of Defects Concentrations Induced by Ammonia Flow Rate and its Effects on Gallium Nitride Grown by MOCVD

MRS proceedings, 2010, Vol.1195 (1), p.131-136

2010

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The Effect of Passivation SiON layer on the Data Retention Reliability of NAND Flash Memory

MRS proceedings, 2010, Vol.1195 (1), p.182-187

2010

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Reliability in Mechatronics Systems from TEM, SEM and SE Material Analysis

MRS proceedings, 2009, Vol.1195 (1), p.188-195, Article 1195-B07-04

2009

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Catastrophic Optical-damage in High-power, Broad-area Laser-diodes

MRS proceedings, 2009, Vol.1195 (1), p.40-51, Article 1195-B01-01

2009

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Recombination-enhanced Dislocation Glides—The Current Status of Knowledge

MRS proceedings, 2009, Vol.1195 (1), p.78-89, Article 1195-B02-01

Maeda, Koji

2009

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Mechanism of Defect Reactions in Semiconductors

MRS proceedings, 2009, Vol.1195 (1), p.90-101, Article 1195-B02-02

Shinozuka, Yuzo

2009

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Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon

MRS proceedings, 2009, Vol.1195 (1), p.271-276, Article 1195-B11-02

2009

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Density-Functional Analysis on Vacancy Orbital and its Elastic Response of Silicon

MRS proceedings, 2009, Vol.1195 (1), p.216-221, Article 1195-B08-11

2009

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Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs for Fiber Optical Communication

MRS proceedings, 2009, Vol.1195 (1), p.1-12, Article 1195-B01-02

2009

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GaAs HEMT Reliability and Degradation Mechanisms after Long Term Stress Testing

MRS proceedings, 2009, Vol.1195 (1), p.161-167, Article 1195-B05-04

2009

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Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes

MRS proceedings, 2009, Vol.1195 (1), p.62-70, Article 1195-B01-05

2009

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Plasma Spray of Nano Composite Ceramics Using Solution Precursors and Combustion Synthesized Nano Powders

MRS proceedings, 2009, Vol.1195 (1), p.277-282, Article 1195-B12-03

2009

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Dependency of Indium Concentration on Structural Defects in MOVPE-grown InGaN/GaN Heterostructures

MRS proceedings, 2009, Vol.1195 (1), p.233-238, Article 1195-B08-27

2009

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Recombination-enhanced Dislocation Glides—The Current Status of Knowledge

MRS proceedings, 2009, Vol.1195 (1), p.102-113, Article 1195-B02-03

Maeda, Koji

2009

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Sub Surface Material Characterization using High Frequency Eddy Current Spectroscopy

MRS proceedings, 2009, Vol.1195 (1), p.239-244, Article 1195-B09-02

2009

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Large Batch Etching of Gallium Nitride Using Inductively Coupled Plasma Tools as a Production Solution

MRS proceedings, 2009, Vol.1195 (1), p.137-142, Article 1195-B03-06

2009

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A Comprehensive Approach to HEMT Reliability Testing

MRS proceedings, 2009, Vol.1195 (1), p.13-19, Article 1195-B05-03

2009

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Low Temperature Copper Deposition by PE-ALD

MRS proceedings, 2009, Vol.1195 (1), p.283-288, Article 1195-B12-05

2009

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Temperature Dependent Optical Band Gap Measurements of III-V Films by Low Temperature Photoluminescence Spectroscopy

MRS proceedings, 2009, Vol.1195 (1), p.20-24, Article 1195-B08-24

2009

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Gate Stack Reliability of High-Mobility 4H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric

MRS proceedings, 2009-01, Vol.1195

2009

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Microstructure Study of the Oxidation of TiN Layers During Sputtering Process

MRS proceedings, 2009, Vol.1195 (1), p.222-226, Article 1195-B08-23

Wang, Chun

2009

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Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-pérot lasers, operating at 10-Gb/s, up to 110 °C, with constant current swing

A Study of Degradation in High Power Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers as Pump Lasers

Reliability of High-Temperature Operation for GaN-Based Operational Amplifiers

Reliability and Performance of Pseudomorphic Ultraviolet Light Emitting Diodes on Bulk Aluminum Nitride Substrates

Modifications of Defects Concentrations Induced by Ammonia Flow Rate and its Effects on Gallium Nitride Grown by MOCVD

The Effect of Passivation SiON layer on the Data Retention Reliability of NAND Flash Memory

Reliability in Mechatronics Systems from TEM, SEM and SE Material Analysis

Catastrophic Optical-damage in High-power, Broad-area Laser-diodes

Recombination-enhanced Dislocation Glides—The Current Status of Knowledge

Mechanism of Defect Reactions in Semiconductors

Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon

Density-Functional Analysis on Vacancy Orbital and its Elastic Response of Silicon

Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs for Fiber Optical Communication

GaAs HEMT Reliability and Degradation Mechanisms after Long Term Stress Testing

Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes

Plasma Spray of Nano Composite Ceramics Using Solution Precursors and Combustion Synthesized Nano Powders

Dependency of Indium Concentration on Structural Defects in MOVPE-grown InGaN/GaN Heterostructures

Recombination-enhanced Dislocation Glides—The Current Status of Knowledge

Sub Surface Material Characterization using High Frequency Eddy Current Spectroscopy

Large Batch Etching of Gallium Nitride Using Inductively Coupled Plasma Tools as a Production Solution

A Comprehensive Approach to HEMT Reliability Testing

Low Temperature Copper Deposition by PE-ALD

Temperature Dependent Optical Band Gap Measurements of III-V Films by Low Temperature Photoluminescence Spectroscopy

Gate Stack Reliability of High-Mobility 4H SiC Lateral MOSFETs with Deposited Al2O3 Gate Dielectric

Microstructure Study of the Oxidation of TiN Layers During Sputtering Process

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