UB Paderborn / Katalog / Suche / in CDI

Strategy of Solution-Processed All-Inorganic Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes

ACS nano, 2018-02, Vol.12 (2), p.1462-1472

2018

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Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Synergetic Effect of the Surfactant and Silica Coating on the Enhanced Emission and Stability of Perovskite Quantum Dots for Anticounterfeiting

ACS applied materials & interfaces, 2019-08, Vol.11 (31), p.28013-28022

2019

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Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Applied physics letters, 2018-04, Vol.112 (15)

2018

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Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

Applied physics letters, 2014-03, Vol.104 (13)

2014

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Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

Applied physics letters, 2016-02, Vol.108 (6)

2016

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Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE

Journal of luminescence, 2017-06, Vol.186, p.243-246

2017

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A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging

Symmetry (Basel), 2022-08, Vol.14 (8), p.1721

2022

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Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Journal of materials science. Materials in electronics, 2017-10, Vol.28 (19), p.14341-14347

2017

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Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Journal of alloys and compounds, 2018-01, Vol.731, p.243-247

2018

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Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

Journal of physics. D, Applied physics, 2016-03, Vol.49 (14), p.145104-145108

2016

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Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

Applied physics letters, 2014-08, Vol.105 (6)

2014

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High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction

Applied physics letters, 2013-07, Vol.103 (2), p.21109

2013

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UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure

Journal of luminescence, 2017-07, Vol.187, p.428-432

2017

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Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

Optics communications, 2015-02, Vol.336, p.1-4

2015

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A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Materials science in semiconductor processing, 2015-11, Vol.39, p.582-586

2015

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Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Applied surface science, 2016-01, Vol.360, p.772-776

2016

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Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

Applied physics letters, 2013-04, Vol.102 (16)

2013

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p-Type NiZnO thin films grown by photo-assist metal–organic chemical vapor deposition

Journal of alloys and compounds, 2013-12, Vol.579, p.160-164

2013

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Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

Applied surface science, 2014-03, Vol.295, p.26-30

2014

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High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1423-1429

2012

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High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure

Nano letters, 2017-01, Vol.17 (1), p.313-321

2017

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Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

Journal of luminescence, 2014-10, Vol.154, p.587-592

2014

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Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Applied physics. A, Materials science & processing, 2014-09, Vol.116 (4), p.1561-1566

2014

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Strategy of Solution-Processed All-Inorganic Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes

Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

Synergetic Effect of the Surfactant and Silica Coating on the Enhanced Emission and Stability of Perovskite Quantum Dots for Anticounterfeiting

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE

A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging

Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction

UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure

Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

p-Type NiZnO thin films grown by photo-assist metal–organic chemical vapor deposition

Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure

Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

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