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The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE

Technical physics letters, 2020-12, Vol.46 (12), p.1211-1214

2020

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Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

Technical physics letters, 2021-10, Vol.47 (10), p.753-756

2021

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A Light-Emitting Diode Based on AlInGaN Heterostructures Grown on SiC/Si Substrates and Its Fabrication Technology

Technical physics letters, 2022-02, Vol.48 (2), p.31-34

2022

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Heat-Flux Measurement by Sensors Based on Anisotropic Thermoelements in a Gas-Dynamics Experiment Shock Tubes

Fluid dynamics, 2023-08, Vol.58 (4), p.779-786

2023

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Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range

Technical physics letters, 2023-12, Vol.49 (Suppl 3), p.S211-S214

2023

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Thin-Film LED based on AlInGaN Layers Grown on Hybrid SiC/Si Substrates

Technical physics letters, 2023-12, Vol.49 (Suppl 4), p.S338-S341

2023

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Insulating GaN Epilayers Co-Doped with Iron and Carbon

Technical physics letters, 2019-07, Vol.45 (7), p.723-726

2019

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A TEM Study of AlN–AlGaN–GaN Multilayer Buffer Structures on Silicon Substrates

Technical physics letters, 2020-10, Vol.46 (10), p.991-995

2020

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High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

Technical physics letters, 2018-01, Vol.44 (1), p.1-16

2018

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Study of the Effect of Electron Cooling: Overview of the Current State

Technical physics, 2019-03, Vol.64 (3), p.287-292

2019

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Double Probe Measuring Technique in an Electrode Discharge with Varying Parameters

Technical physics, 2020-02, Vol.65 (2), p.194-198

2020

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Change in the Space Potential in Glow Discharge Plasma during the Motion of the Shock Wave

Technical physics, 2019-10, Vol.64 (10), p.1441-1445

2019

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The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas

Technical physics letters, 2018-07, Vol.44 (7), p.577-580

2018

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Metamaterial for efficient second harmonic generation

Technical physics letters, 2016-10, Vol.42 (10), p.1041-1044

2016

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Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel

Technical physics letters, 2016-11, Vol.42 (11), p.1079-1082

2016

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A Method of Nonstationary Heat Flux Calculation Using the Signal of a Sensor Based on Anisotropic Bismuth Single-Crystal Thermoelements

Technical physics letters, 2018-04, Vol.44 (4), p.316-319

2018

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The influence of thermophysical substrate properties of an anisotropic thermoelement on thermopower in the nonstationary thermal regime

Technical physics letters, 2017-04, Vol.43 (4), p.334-337

2017

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Charged Particle Distribution near the Shock Front in a Glow Discharge

Technical physics, 2018-02, Vol.63 (2), p.172-174

2018

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Interaction of shock wave with free glow discharge

Technical physics letters, 2017-06, Vol.43 (6), p.511-513

2017

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An experimental study of the effect of humidity on the distribution of charged particles in a glow-discharge plasma

Technical physics letters, 2017-11, Vol.43 (11), p.1009-1011

2017

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Synthesis of an LED structure on the and (0001) faces of mesa stripes grown by selective-area epitaxy

Technical physics letters, 2014, Vol.40 (1), p.18-20

2014

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Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source

Technical physics letters, 2016-05, Vol.42 (5), p.539-542

2016

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Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions

Technical physics letters, 2014-05, Vol.40 (5), p.365-368

2014

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The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy

Technical physics letters, 2016-04, Vol.42 (4), p.431-434

2016

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MOVPE of III-N LED structures with short technological process

Technical physics letters, 2015-03, Vol.41 (3), p.213-216

2015

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The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

A Light-Emitting Diode Based on AlInGaN Heterostructures Grown on SiC/Si Substrates and Its Fabrication Technology

Heat-Flux Measurement by Sensors Based on Anisotropic Thermoelements in a Gas-Dynamics Experiment Shock Tubes

Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range

Thin-Film LED based on AlInGaN Layers Grown on Hybrid SiC/Si Substrates

Insulating GaN Epilayers Co-Doped with Iron and Carbon

A TEM Study of AlN–AlGaN–GaN Multilayer Buffer Structures on Silicon Substrates

High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

Study of the Effect of Electron Cooling: Overview of the Current State

Double Probe Measuring Technique in an Electrode Discharge with Varying Parameters

Change in the Space Potential in Glow Discharge Plasma during the Motion of the Shock Wave

The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas

Metamaterial for efficient second harmonic generation

Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel

A Method of Nonstationary Heat Flux Calculation Using the Signal of a Sensor Based on Anisotropic Bismuth Single-Crystal Thermoelements

The influence of thermophysical substrate properties of an anisotropic thermoelement on thermopower in the nonstationary thermal regime

Charged Particle Distribution near the Shock Front in a Glow Discharge

Interaction of shock wave with free glow discharge

An experimental study of the effect of humidity on the distribution of charged particles in a glow-discharge plasma

Synthesis of an LED structure on the and (0001) faces of mesa stripes grown by selective-area epitaxy

Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source

Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions

The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy

MOVPE of III-N LED structures with short technological process

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