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Improvement of properties of an ambipolar organic field-effect transistor by using a singlet biradicaloid film

Japanese Journal of Applied Physics, 2016-01, Vol.55 (1), p.11601

2016

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Influence of High-Power Ultrasonic Irradiation on Primary Nucleation Process during Solidification

Japanese Journal of Applied Physics, 2007-07, Vol.46 (7S), p.4939

2007

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Synthesis of Pt-Entrapped Titanate Nanotubes

Japanese Journal of Applied Physics, 2005-01, Vol.44 (5L), p.L690

2005

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Acoustic-Cavitation-Based Production of Foamed Metallic Material

Japanese Journal of Applied Physics, 2006-05, Vol.45 (5S), p.4793

2006

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Visualization of Acoustically Induced Cavitation Bubbles and Microjets with the Aid of a High-Speed Camera

Japanese Journal of Applied Physics, 2005-06, Vol.44 (6S), p.4647

2005

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Electrical properties of planar RF discharges including the second harmonic frequency

Japanese Journal of Applied Physics, 1994, Vol.33 (7B), p.4365-4368

1994

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Measurement of the electron energy distribution in asymmetric radio-frequency plasmas with a self-compensating Langmuir probe

Japanese Journal of Applied Physics, 1997-07, Vol.36 (7B), p.4601-4604

1997

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Resist etching with parallel-plate RF plasmas enhanced by a cusp magnetic field

Japanese Journal of Applied Physics, 1997-07, Vol.36 (7B), p.4879-4885

1997

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Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1S)

2018

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Impacts of oxidants in atomic layer deposition method on Al 2 O 3 /GaN interface properties

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1S), p.1

2018

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Impacts of oxidants in atomic layer deposition method on Al^sub 2^O^sub 3^/GaN interface properties

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1), p.01AD04

2018

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Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current-voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates

Japanese Journal of Applied Physics, 2015-02, Vol.54 (2)

2015

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Development of the calibration method for a fast steering antenna for investigating the mode conversion window used in EBW heating in the LHD plasma

Japanese Journal of Applied Physics, 2019-10, Vol.58 (10), p.106001

2019

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Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al 2 O 3 /AlGaN/GaN high-electron-mobility transistors on Si substrates

Japanese Journal of Applied Physics, 2015-02, Vol.54 (2), p.20301

2015

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Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current-voltage characteristics of Al sub(2)O sub(3)/AlGaN/GaN high-electron-mobility transistors on Si substrates

Japanese Journal of Applied Physics, 2015-02, Vol.54 (2), p.020301-1-020301-4

2015

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Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DF03-04DF03-4

2011

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Switching mechanism of an all-optical switch using pulsed gating

Japanese Journal of Applied Physics, 2015-01, Vol.54 (1), p.12201-1-012201-7

2015

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Effect of Hydrogen on Vacancy Formation in Sputtered Cu Films Studied by Positron Annihilation Spectroscopy

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.046501-046501-4

2013

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Effect of Magnetic Field on Permeability of Electroplated Permalloy for Microdevices

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DB17-04DB17-3

2010

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Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Nonlinear Behavior of Decrease in Reflectivity of Multilayer Mirrors for Extreme Ultraviolet Lithography Optics by High-Flux Extreme Ultraviolet Irradiation in Various Vacuum Environments

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6), p.06GB05-06GB05-6

2011

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Nonlinear Behavior of Decrease in Reflectivity of Multilayer Mirrors for Extreme Ultraviolet Lithography Optics by High-Flux Extreme Ultraviolet Irradiation in Various Vacuum Environments

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6S), p.6

2011

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Beam Test of Multi-Bunch Energy Compensation System in the Accelerator Test Facility at KEK

Japanese Journal of Applied Physics, 2004-08, Vol.43 (8R), p.5617

2004

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Design of Reflecting Mirrors for Electron Cyclotron Wave Launching System in GAMMA 10

Japanese Journal of Applied Physics, 2005-09, Vol.44 (9R), p.6791

2005

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Surface Phonons, Electronic Structure and Chemical Reactivity of Diamond (100)(2 ×1) Surface

Japanese Journal of Applied Physics, 1999-12, Vol.38 (12R), p.6659

1999

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Improvement of properties of an ambipolar organic field-effect transistor by using a singlet biradicaloid film

Influence of High-Power Ultrasonic Irradiation on Primary Nucleation Process during Solidification

Synthesis of Pt-Entrapped Titanate Nanotubes

Acoustic-Cavitation-Based Production of Foamed Metallic Material

Visualization of Acoustically Induced Cavitation Bubbles and Microjets with the Aid of a High-Speed Camera

Electrical properties of planar RF discharges including the second harmonic frequency

Measurement of the electron energy distribution in asymmetric radio-frequency plasmas with a self-compensating Langmuir probe

Resist etching with parallel-plate RF plasmas enhanced by a cusp magnetic field

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

Impacts of oxidants in atomic layer deposition method on Al 2 O 3 /GaN interface properties

Impacts of oxidants in atomic layer deposition method on Al^sub 2^O^sub 3^/GaN interface properties

Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current-voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates

Development of the calibration method for a fast steering antenna for investigating the mode conversion window used in EBW heating in the LHD plasma

Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al 2 O 3 /AlGaN/GaN high-electron-mobility transistors on Si substrates

Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current-voltage characteristics of Al sub(2)O sub(3)/AlGaN/GaN high-electron-mobility transistors on Si substrates

Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors

Switching mechanism of an all-optical switch using pulsed gating

Effect of Hydrogen on Vacancy Formation in Sputtered Cu Films Studied by Positron Annihilation Spectroscopy

Effect of Magnetic Field on Permeability of Electroplated Permalloy for Microdevices

Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Nonlinear Behavior of Decrease in Reflectivity of Multilayer Mirrors for Extreme Ultraviolet Lithography Optics by High-Flux Extreme Ultraviolet Irradiation in Various Vacuum Environments

Nonlinear Behavior of Decrease in Reflectivity of Multilayer Mirrors for Extreme Ultraviolet Lithography Optics by High-Flux Extreme Ultraviolet Irradiation in Various Vacuum Environments

Beam Test of Multi-Bunch Energy Compensation System in the Accelerator Test Facility at KEK

Design of Reflecting Mirrors for Electron Cyclotron Wave Launching System in GAMMA 10

Surface Phonons, Electronic Structure and Chemical Reactivity of Diamond (100)(2 ×1) Surface

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