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Etch characteristics of CoFeB thin films and magnetic tunnel junction stacks in a H2O/CH3OH plasma

Korean Journal of Chemical Engineering, 2014, 31(12), 177, pp.2274-2279

2014

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Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

Applied physics letters, 2021-12, Vol.119 (24)

2021

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A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Materials, 2020-07, Vol.13 (13), p.2968

2020

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Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors

Applied physics letters, 2019-10, Vol.115 (18)

2019

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High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-10, Vol.8 (37), p.1333-1339

2020

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Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Materials, 2020-07, Vol.13 (15), p.3387

2020

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A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5), p.n/a

2021

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Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2‑Based Metal-Ferroelectric-Metal Capacitors

ACS applied electronic materials, 2022-04, Vol.4 (4), p.1405-1414

2022

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SELDI-TOF MS를 활용한 혈당강하 수수 종자의 펩타이드 프로파일링 및 특이 발현 펩타이드 선발

한국작물학회지, 2014, 59(3), , pp.252-262

2014

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국내 수수 종자의 용해도별 단백질 함량 변이

한국작물학회지, 2014, 59(3), , pp.245-251

2014

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수수종자의 펩타이드 분석을 위한 SELDI-TOF MS 최적화 연구

한국작물학회지, 2013, 58(1), , pp.50-56

2013

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Inductive couple plasma reactive ion etching characteristics of TiO2 thin films

Thin solid films, 2015-07, Vol.587, p.20-27

2015

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Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane

ACS applied materials & interfaces, 2018-04, Vol.10 (16), p.14116-14123

2018

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Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

ACS applied materials & interfaces, 2018-12, Vol.10 (51), p.44825-44833

2018

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Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant

Applied physics letters, 2022-11, Vol.121 (22)

2022

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High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2022-03, Vol.40 (2)

2022

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Dry etching of palladium thin films in high density plasmas of CH3OH/Ar, C2H5OH/Ar, CH4/Ar, and CH4/O2/Ar gas mixtures

Thin solid films, 2017-08, Vol.636, p.325-332

2017

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Investigation on etching characteristics of Pd thin films using CH3COOH/Ar gas

Thin solid films, 2017-09, Vol.637, p.37-42

2017

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Investigation on etching characteristics of Pd thin films using CH 3 COOH/Ar gas

Thin solid films, 2017-09, Vol.637, p.37-42

2017

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Effect of O2 on etch characteristics of Co2MnSi thin films in CH4/O2/Ar gas mixture

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-05, Vol.33 (3)

2015

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Etch characteristics of Ru thin films using O2/Ar, CH4/Ar, and O2/CH4/Ar plasmas

Thin solid films, 2016-09, Vol.615, p.311-317

2016

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Ozone based high-temperature atomic layer deposition of SiO2 thin films

Japanese Journal of Applied Physics, 2020-06, Vol.59, p.1

2020

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High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

Thin solid films, 2015-07, Vol.587, p.28-33

2015

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Dry etching of Co2MnSi magnetic thin films using a CH3OH/Ar based inductively coupled plasma

Vacuum, 2015-01, Vol.111, p.19-24

2015

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The Effect of Appearance Design Stage on Social Presence When Interacting with Digital Humans in VR

Journal of Digital Contents Society, 2020-06, Vol.21 (6), p.1113-1122

2020

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Etch characteristics of CoFeB thin films and magnetic tunnel junction stacks in a H2O/CH3OH plasma

Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition

Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2‑Based Metal-Ferroelectric-Metal Capacitors

SELDI-TOF MS를 활용한 혈당강하 수수 종자의 펩타이드 프로파일링 및 특이 발현 펩타이드 선발

국내 수수 종자의 용해도별 단백질 함량 변이

수수종자의 펩타이드 분석을 위한 SELDI-TOF MS 최적화 연구

Inductive couple plasma reactive ion etching characteristics of TiO2 thin films

Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant

High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

Dry etching of palladium thin films in high density plasmas of CH3OH/Ar, C2H5OH/Ar, CH4/Ar, and CH4/O2/Ar gas mixtures

Investigation on etching characteristics of Pd thin films using CH3COOH/Ar gas

Investigation on etching characteristics of Pd thin films using CH 3 COOH/Ar gas

Effect of O2 on etch characteristics of Co2MnSi thin films in CH4/O2/Ar gas mixture

Etch characteristics of Ru thin films using O2/Ar, CH4/Ar, and O2/CH4/Ar plasmas

Ozone based high-temperature atomic layer deposition of SiO2 thin films

High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

Dry etching of Co2MnSi magnetic thin films using a CH3OH/Ar based inductively coupled plasma

The Effect of Appearance Design Stage on Social Presence When Interacting with Digital Humans in VR

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