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Metal–insulator–metal waveguides with lateral electrical pumping

Optical and quantum electronics, 2021-04, Vol.53 (4), Article 171

Hill, Martin T.

2021

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High confinement electrically pumped metal‐insulator‐metal waveguide structures

Microwave and optical technology letters, 2021-01, Vol.63 (1), p.152-159

2021

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Metal-Insulator-Metal Waveguides With Self Aligned and Electrically Contacted Thin Semiconductor Cores Exhibiting High Optical Confinement and Low Loss

Journal of lightwave technology, 2013-08, Vol.31 (15), p.2540-2549

Hill, M. T.

2013

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Nonlinear polarization rotation in semiconductor optical amplifiers: theory and application to all-optical flip-flop memories

IEEE journal of quantum electronics, 2003-01, Vol.39 (1), p.141-148

2003

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Nanolasers Beat the Diffraction Limit

IEEE photonics journal, 2010-04, Vol.2 (2), p.235-237

Hill, Martin T.

2010

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All-optical flip-flop based on coupled laser diodes

IEEE journal of quantum electronics, 2001-03, Vol.37 (3), p.405-413

2001

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Fast optical flip-flop by use of Mach-Zehnder interferometers

Microwave and optical technology letters, 2001-12, Vol.31 (6), p.411-415

2001

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Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run

Journal of lightwave technology, 2003-01, Vol.21 (1), p.211-217

2003

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Short-pulse generation in interferometers employing semiconductor optical amplifiers

IEEE journal of quantum electronics, 2003-07, Vol.39 (7), p.886-896

2003

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All-optical flip-flop based on coupled laser diodes

Microwave and optical technology letters, 2000-05, Vol.25 (3), p.157-159

Hill, Martin T.

2000

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Stable white light emission from an externally modified organic light-emitting device

Displays, 2010-12, Vol.31 (4), p.181-185

2010

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Distributed amplifiers with composite left/right-handed transmission lines

Microwave and optical technology letters, 2006-03, Vol.48 (3), p.609-613

2006

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Optimizing imbalance and loss in 2 x 2 3-dB multimode interference couplers via access waveguide width

Journal of lightwave technology, 2003-10, Vol.21 (10), p.2305-2313

2003

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Lasing and spontaneous emission in gap-plasmon mode Bragg grating waveguides

CLEO: 2011 - Laser Science to Photonic Applications, 2011, p.1-2

2011

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InAs-InP (1.55- \mum Region) Quantum-Dot Microring Lasers

IEEE photonics technology letters, 2008-03, Vol.20 (6), p.446-448

2008

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Ring-laser optical flip-flop memory with single active element

IEEE journal of selected topics in quantum electronics, 2004-09, Vol.10 (5), p.1093-1100

2004

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Ultrafast All-Optical Wavelength Routing of Data Packets Utilizing an SOA-Based Wavelength Converter and a Monolithically Integrated Optical Flip-Flop

IEEE journal of selected topics in quantum electronics, 2008-05, Vol.14 (3), p.801-807

2008

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Integrated two-state AWG-based multiwavelength laser

IEEE photonics technology letters, 2005-05, Vol.17 (5), p.956-958

2005

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A FEM-based nonlinear MAP estimator in electrical impedance tomography

Proceedings of International Conference on Image Processing, 1997, Vol.2, p.684-687 vol.2

1997

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Generic fractal behaviour of ballistic devices

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601), 2002, p.293-298

2002

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Two-dimensional indium gallium arsenide avalanche photodiode arrays for high sensitivity, high speed imaging

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2002, Vol.2, p.758-759 vol.2

2002

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Nano Lasers in Photonic VLSI

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.474-475

2007

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Finite element analysis of printing wiring board due to the solder masking process warpage

Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93), 1993, p.563-569

1993

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GaN devices for microwave applications [FET/HEMT]

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2002, p.111-118

2002

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The gate-length dependent performance of AlGaN/GaN HFETs with silicon nitride passivation

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534), 2000, p.76-81

2000

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Metal–insulator–metal waveguides with lateral electrical pumping

High confinement electrically pumped metal‐insulator‐metal waveguide structures

Metal-Insulator-Metal Waveguides With Self Aligned and Electrically Contacted Thin Semiconductor Cores Exhibiting High Optical Confinement and Low Loss

Nonlinear polarization rotation in semiconductor optical amplifiers: theory and application to all-optical flip-flop memories

Nanolasers Beat the Diffraction Limit

All-optical flip-flop based on coupled laser diodes

Fast optical flip-flop by use of Mach-Zehnder interferometers

Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run

Short-pulse generation in interferometers employing semiconductor optical amplifiers

All-optical flip-flop based on coupled laser diodes

Stable white light emission from an externally modified organic light-emitting device

Distributed amplifiers with composite left/right-handed transmission lines

Optimizing imbalance and loss in 2 x 2 3-dB multimode interference couplers via access waveguide width

Lasing and spontaneous emission in gap-plasmon mode Bragg grating waveguides

InAs-InP (1.55- \mum Region) Quantum-Dot Microring Lasers

Ring-laser optical flip-flop memory with single active element

Ultrafast All-Optical Wavelength Routing of Data Packets Utilizing an SOA-Based Wavelength Converter and a Monolithically Integrated Optical Flip-Flop

Integrated two-state AWG-based multiwavelength laser

A FEM-based nonlinear MAP estimator in electrical impedance tomography

Generic fractal behaviour of ballistic devices

Two-dimensional indium gallium arsenide avalanche photodiode arrays for high sensitivity, high speed imaging

Nano Lasers in Photonic VLSI

Finite element analysis of printing wiring board due to the solder masking process warpage

GaN devices for microwave applications [FET/HEMT]

The gate-length dependent performance of AlGaN/GaN HFETs with silicon nitride passivation

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