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Effect of growing nanoparticle on the magnetic field induced filaments in a radio-frequency Ar/C 2 H 2 discharge plasma

Japanese Journal of Applied Physics, 2020-05, Vol.59 (SH), p.SHHC07

2020

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A nano-mechanical device using a Ag 2 S–C 60 system

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SD), p.SDDF02

2019

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Fourfold symmetric anisotropic magnetoresistance in half-metallic Co 2 MnSi Heusler alloy thin films

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6), p.63001

2018

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Material science and device physics in SiC technology for high-voltage power devices

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4), p.40103-1-040103-27

Kimoto, Tsunenobu

2015

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High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

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Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100209-1-100209-10

2014

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Third-generation organic electroluminescence materials

Japanese Journal of Applied Physics, 2014-06, Vol.53 (6), p.60101-1-060101-11

Adachi, Chihaya

2014

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Current status of Ga2O3 power devices

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

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Detailed Study of Magnetic Behaviour in Single Crystalline Eu 3 Rh 4 Sn 13

Japanese Journal of Applied Physics, 2014, Vol.3

2014

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Assembly of van der Waals heterostructures: exfoliation, searching, and stacking of 2D materials

Japanese Journal of Applied Physics, 2020-01, Vol.59 (1), p.10101

2020

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Impact of different dopants on the switching properties of ferroelectric hafniumoxide

Japanese Journal of Applied Physics, 2014-08, Vol.53 (8S1), p.8-1-08LE02-5

2014

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Recent progress of GaN power devices for automotive applications

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100210-1-100210-10

Kachi, Tetsu

2014

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Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy

Japanese Journal of Applied Physics, 2015-11, Vol.54 (11)

2015

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Solution plasma: A new reaction field for nanomaterials synthesis

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1), p.102

2018

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Physics-informed neural networks for solving the Boltzmann equation of the electron velocity distribution function in weakly ionized plasmas

Japanese Journal of Applied Physics, 2022-08, Vol.61 (8), p.86002

2022

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Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6

Japanese Journal of Applied Physics, 2016-03, Vol.55 (3)

2016

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Phase transformation behavior of ultrathin Hf0.5Zr0.5O2 films investigated through wide range annealing experiments

Japanese Journal of Applied Physics, 2019-03, Vol.58 (SB)

2019

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Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12), p.1202

2016

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Germanium CMOS potential from material and process perspectives: Be more positive about germanium

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1), p.10101

2018

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Recent progress of Na-flux method for GaN crystal growth

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC0803

2019

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Grain size effect on piezoelectric properties of BaTiO3 ceramics

Japanese Journal of Applied Physics, 2018-09, Vol.57 (9)

2018

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Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

Japanese Journal of Applied Physics, 2019-11, Vol.58 (SL), p.SL0801

2019

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CVD growth of monolayer MoS2: Role of growth zone configuration and precursors ratio

Japanese Journal of Applied Physics, 2017-06, Vol.56 (6S1)

2017

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A possible origin of the large leakage current in ferroelectric Al1−xScxN films

Japanese Journal of Applied Physics, 2021-03, Vol.60 (3)

2021

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Crystallographic and optical properties and band structures of CuInSe2, CuIn3Se5, and CuIn5Se8 phases in Cu-poor Cu2Se-In2Se3 pseudo-binary system

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S)

2016

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Effect of growing nanoparticle on the magnetic field induced filaments in a radio-frequency Ar/C 2 H 2 discharge plasma

A nano-mechanical device using a Ag 2 S–C 60 system

Fourfold symmetric anisotropic magnetoresistance in half-metallic Co 2 MnSi Heusler alloy thin films

Material science and device physics in SiC technology for high-voltage power devices

High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Third-generation organic electroluminescence materials

Current status of Ga2O3 power devices

Detailed Study of Magnetic Behaviour in Single Crystalline Eu 3 Rh 4 Sn 13

Assembly of van der Waals heterostructures: exfoliation, searching, and stacking of 2D materials

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

Recent progress of GaN power devices for automotive applications

Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy

Solution plasma: A new reaction field for nanomaterials synthesis

Physics-informed neural networks for solving the Boltzmann equation of the electron velocity distribution function in weakly ionized plasmas

Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6

Phase transformation behavior of ultrathin Hf0.5Zr0.5O2 films investigated through wide range annealing experiments

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

Germanium CMOS potential from material and process perspectives: Be more positive about germanium

Recent progress of Na-flux method for GaN crystal growth

Grain size effect on piezoelectric properties of BaTiO3 ceramics

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

CVD growth of monolayer MoS2: Role of growth zone configuration and precursors ratio

A possible origin of the large leakage current in ferroelectric Al1−xScxN films

Crystallographic and optical properties and band structures of CuInSe2, CuIn3Se5, and CuIn5Se8 phases in Cu-poor Cu2Se-In2Se3 pseudo-binary system

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