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Plasma confinement by hemispherical cavity in laser-induced breakdown spectroscopy

Applied physics letters, 2011-03, Vol.98 (13), p.131501-131501-3

2011

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On the effect of impurities in metallic glass formation

Applied physics letters, 2010-04, Vol.96 (14), p.141901-141901-3

2010

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Zero-dimensional field emitter based on ZnO quantum dots

Applied physics letters, 2010-10, Vol.97 (14), p.143102-143102-3

2010

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Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Applied physics letters, 1998-12, Vol.73 (25), p.3706-3708

1998

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Zero-field spin splitting in In0.52Al0.48As/InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurements

Applied physics letters, 2002-04, Vol.80 (17), p.3132-3134

2002

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Rational synthesis and tunable optical properties of quasialigned Zn1−xMgxO nanorods

Applied physics letters, 2007-11, Vol.91 (19)

2007

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Comment on "Photoluminescence study of Sb-doped p -type ZnO filmsby molecular-beam epitaxy" [ Appl. Phys. Lett. 87 , 252102 ( 2005 ) ]

Applied physics letters, 2007-03, Vol.90 (11), p.116102-116102-2

2007

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Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice

Applied physics letters, 1997-05, Vol.70 (18), p.2440-2442

1997

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Donor/acceptor doping and electrical tailoring in ZnO quantum dots

Applied physics letters, 2007-09, Vol.91 (11), p.112110-112110-3

2007

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ZnMgO quantum dots grown by low-pressure metal organic chemical vapor deposition

Applied physics letters, 2007-01, Vol.90 (1)

2007

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Origins of both insulator–metal transition and colossal magnetoresistance in doped manganese perovskites

Applied physics letters, 2000-12, Vol.77 (26), p.4398-4400

2000

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Erratum: “Rational synthesis and tunable optical properties of quasialigned Zn1-x Mgx nanorods” [Appl. Phys. Lett. 91, 193108 (2007)]

Applied physics letters, 2008-01, Vol.92 (1)

2008

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Erratum: "Rational synthesis and tunable optical properties of quasialigned Zn 1 - x Mg x nanorods" [ Appl. Phys. Lett. 91 , 193108 ( 2007 ) ]

Applied physics letters, 2008-01, Vol.92 (1), p.019902-019902-1

2008

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Rational synthesis and tunable optical properties of quasialigned Zn 1 − x Mg x O nanorods

Applied physics letters, 2007-11, Vol.91 (19), p.193108-193108-3

2007

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Longitudinal optic phonon–plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

Applied physics letters, 2001-08, Vol.79 (9), p.1375-1377

2001

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Single crystalline ZnMgO pleated nanosheets and quasinanotubes

Applied physics letters, 2007-07, Vol.91 (1), p.013105-013105-3

2007

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Erratum: "ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition" [ Appl. Phys. Lett. 88 , 173506 ( 2006 )]

Applied physics letters, 2009-04, Vol.94 (16), p.169901-169901-1

2009

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Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

Applied physics letters, 2001-09, Vol.79 (12), p.1909-1911

2001

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Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures

Applied physics letters, 1999-09, Vol.75 (12), p.1733-1735

1999

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Room-temperature photoluminescence from Zn O ∕ Zn Mg O multiple quantum wells grown on Si(111) substrates

Applied physics letters, 2007-07, Vol.91 (2), p.022103-022103-3

2007

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ZnMgO quantum dots grown by low-pressure metal organic chemicalvapor deposition

Applied physics letters, 2007-01, Vol.90 (1), p.012111-012111-3

2007

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Erratum: “Identification of acceptor states in Li -doped p -type ZnO thin films” [Appl. Phys. Lett. 89, 042106 (2006)]

Applied physics letters, 2006-09, Vol.89 (12), p.129901-129901-1

2006

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ZnO light-emitting diodes fabricated on Si substrateswith homobuffer layers

Applied physics letters, 2007-09, Vol.91 (11), p.113503-113503-3

2007

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Quantum cables as transport spectroscope for quasi-one-dimensional density of states of cylindrical quantum wires

Applied physics letters, 2000-09, Vol.77 (13), p.2015-2017

2000

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XeCl excimer laser excited by longitudinal discharge

Applied physics letters, 1983-08, Vol.43 (4), p.347-349

1983

Volltextzugriff (PDF)

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Plasma confinement by hemispherical cavity in laser-induced breakdown spectroscopy

On the effect of impurities in metallic glass formation

Zero-dimensional field emitter based on ZnO quantum dots

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Zero-field spin splitting in In0.52Al0.48As/InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurements

Rational synthesis and tunable optical properties of quasialigned Zn1−xMgxO nanorods

Comment on "Photoluminescence study of Sb-doped p -type ZnO filmsby molecular-beam epitaxy" [ Appl. Phys. Lett. 87 , 252102 ( 2005 ) ]

Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice

Donor/acceptor doping and electrical tailoring in ZnO quantum dots

ZnMgO quantum dots grown by low-pressure metal organic chemical vapor deposition

Origins of both insulator–metal transition and colossal magnetoresistance in doped manganese perovskites

Erratum: “Rational synthesis and tunable optical properties of quasialigned Zn1-x Mgx nanorods” [Appl. Phys. Lett. 91, 193108 (2007)]

Erratum: "Rational synthesis and tunable optical properties of quasialigned Zn 1 - x Mg x nanorods" [ Appl. Phys. Lett. 91 , 193108 ( 2007 ) ]

Rational synthesis and tunable optical properties of quasialigned Zn 1 − x Mg x O nanorods

Longitudinal optic phonon–plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

Single crystalline ZnMgO pleated nanosheets and quasinanotubes

Erratum: "ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition" [ Appl. Phys. Lett. 88 , 173506 ( 2006 )]

Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures

Room-temperature photoluminescence from Zn O ∕ Zn Mg O multiple quantum wells grown on Si(111) substrates

ZnMgO quantum dots grown by low-pressure metal organic chemicalvapor deposition

Erratum: “Identification of acceptor states in Li -doped p -type ZnO thin films” [Appl. Phys. Lett. 89, 042106 (2006)]

ZnO light-emitting diodes fabricated on Si substrateswith homobuffer layers

Quantum cables as transport spectroscope for quasi-one-dimensional density of states of cylindrical quantum wires

XeCl excimer laser excited by longitudinal discharge

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