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Acoustic chaos and sonic infrared imaging

Applied physics letters, 2002-10, Vol.81 (17), p.3188-3190

2002

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Anisotropic spin-driven ferroelectricity and magnetoelectric effect in a Y-type hexaferrite

Applied physics letters, 2021-04, Vol.118 (14)

2021

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Anomalous voltage dependence of tunnel magnetoresistance in (Zn, Co)O-based junction with double barrier

Applied physics letters, 2007-10, Vol.91 (17)

2007

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Anomalous voltage dependence of tunnel magnetoresistancein (Zn, Co)O-based junction with double barrier

Applied physics letters, 2007-10, Vol.91 (17), p.172109-172109-3

2007

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Bias-dependent interface roughening and its effect on electric bistability of organic devices

Applied physics letters, 2014-01, Vol.104 (1)

2014

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Bias-field-free high frequency microwave emission of spin-transfer nano-oscillator with magnetizations all in-plane

Applied physics letters, 2021-01, Vol.118 (1)

2021

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Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory

Applied physics letters, 2014-05, Vol.104 (18)

2014

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Bipolar resistive switching behavior with high ON/OFF ratio of Co:BaTiO3 films by acceptor doping

Applied physics letters, 2013-04, Vol.102 (15)

2013

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Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

Applied physics letters, 2010-08, Vol.97 (8), p.083502-083502-3

2010

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Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy

Applied physics letters, 2011-12, Vol.99 (24), p.243113-243113-3

2011

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Carbon nanotube-graphene junctions studied by impedance spectra

Applied physics letters, 2015-02, Vol.106 (5)

2015

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Collective effects of interface roughness and alloy disorder in InxGa1−xN/GaN multiple quantum wells

Applied physics letters, 1998-09, Vol.73 (12), p.1724-1726

1998

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Comment on “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy” [Appl. Phys. Lett. 87, 252102 (2005)]

Applied physics letters, 2007-03, Vol.90 (11)

2007

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Comment on "Photoluminescence study of Sb-doped p -type ZnO filmsby molecular-beam epitaxy" [ Appl. Phys. Lett. 87 , 252102 ( 2005 ) ]

Applied physics letters, 2007-03, Vol.90 (11), p.116102-116102-2

2007

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Comparison of simultaneous multiple wavelength lasing in various neodymium host crystals at transitions from 4 F 3/2–4 I 11/2 and 4 F 3/2–4 I 13/2

Applied physics letters, 1990-05, Vol.56 (20), p.1937-1938

1990

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Comparison of simultaneous multiple waxelength lasing in various neodymium host crystals at transitions from 4F3/2-/11 and 4F3/2-4/13/2

Applied physics letters, 1990, Vol.56 (20), p.1937-1938

1990

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Conductance quantization in oxygen-anion-migration-based resistive switching memory devices

Applied physics letters, 2013-07, Vol.103 (4)

2013

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Continuous controllable amorphization ratio of nanoscale phase change memory cells

Applied physics letters, 2014-06, Vol.104 (22)

2014

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Control of p - and n -type conductivities in Li-doped ZnO thin films

Applied physics letters, 2006-09, Vol.89 (11), p.112113-112113-3

2006

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Controlled growth of Zn-polar ZnO epitaxial film by nitridation of sapphire substrate

Applied physics letters, 2005-03, Vol.86 (11)

2005

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Controlled growth of Zn-polar ZnO epitaxial film by nitridationof sapphire substrate

Applied physics letters, 2005-03, Vol.86 (11), p.112111-112111-3

2005

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Critical current density and resistivity of MgB2 films

Applied physics letters, 2003-07, Vol.83 (1), p.102-104

2003

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Curvature effects on electronic properties of small radius nanotube

Applied physics letters, 2007-07, Vol.91 (3), p.033102-033102-3

2007

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Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers

Applied physics letters, 2011-03, Vol.98 (10), p.102509-102509-3

2011

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Deep-ultraviolet emission from an InGaAs semiconductor laser

Applied physics letters, 2004-04, Vol.84 (16), p.3007-3009

2004

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Acoustic chaos and sonic infrared imaging

Anisotropic spin-driven ferroelectricity and magnetoelectric effect in a Y-type hexaferrite

Anomalous voltage dependence of tunnel magnetoresistance in (Zn, Co)O-based junction with double barrier

Anomalous voltage dependence of tunnel magnetoresistancein (Zn, Co)O-based junction with double barrier

Bias-dependent interface roughening and its effect on electric bistability of organic devices

Bias-field-free high frequency microwave emission of spin-transfer nano-oscillator with magnetizations all in-plane

Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory

Bipolar resistive switching behavior with high ON/OFF ratio of Co:BaTiO3 films by acceptor doping

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy

Carbon nanotube-graphene junctions studied by impedance spectra

Collective effects of interface roughness and alloy disorder in InxGa1−xN/GaN multiple quantum wells

Comment on “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy” [Appl. Phys. Lett. 87, 252102 (2005)]

Comment on "Photoluminescence study of Sb-doped p -type ZnO filmsby molecular-beam epitaxy" [ Appl. Phys. Lett. 87 , 252102 ( 2005 ) ]

Comparison of simultaneous multiple wavelength lasing in various neodymium host crystals at transitions from 4 F 3/2–4 I 11/2 and 4 F 3/2–4 I 13/2

Comparison of simultaneous multiple waxelength lasing in various neodymium host crystals at transitions from 4F3/2-/11 and 4F3/2-4/13/2

Conductance quantization in oxygen-anion-migration-based resistive switching memory devices

Continuous controllable amorphization ratio of nanoscale phase change memory cells

Control of p - and n -type conductivities in Li-doped ZnO thin films

Controlled growth of Zn-polar ZnO epitaxial film by nitridation of sapphire substrate

Controlled growth of Zn-polar ZnO epitaxial film by nitridationof sapphire substrate

Critical current density and resistivity of MgB2 films

Curvature effects on electronic properties of small radius nanotube

Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers

Deep-ultraviolet emission from an InGaAs semiconductor laser

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