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ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers

Applied physics letters, 2007-09, Vol.91 (11)

2007

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Comment on "Photoluminescence study of Sb-doped p -type ZnO filmsby molecular-beam epitaxy" [ Appl. Phys. Lett. 87 , 252102 ( 2005 ) ]

Applied physics letters, 2007-03, Vol.90 (11), p.116102-116102-2

2007

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Erratum: “Rational synthesis and tunable optical properties of quasialigned Zn1-x Mgx nanorods” [Appl. Phys. Lett. 91, 193108 (2007)]

Applied physics letters, 2008-01, Vol.92 (1)

2008

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Erratum: "Rational synthesis and tunable optical properties of quasialigned Zn 1 - x Mg x nanorods" [ Appl. Phys. Lett. 91 , 193108 ( 2007 ) ]

Applied physics letters, 2008-01, Vol.92 (1), p.019902-019902-1

2008

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Rational synthesis and tunable optical properties of quasialigned Zn 1 − x Mg x O nanorods

Applied physics letters, 2007-11, Vol.91 (19), p.193108-193108-3

2007

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Erratum: "ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition" [ Appl. Phys. Lett. 88 , 173506 ( 2006 )]

Applied physics letters, 2009-04, Vol.94 (16), p.169901-169901-1

2009

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Room-temperature photoluminescence from Zn O ∕ Zn Mg O multiple quantum wells grown on Si(111) substrates

Applied physics letters, 2007-07, Vol.91 (2), p.022103-022103-3

2007

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ZnMgO quantum dots grown by low-pressure metal organic chemicalvapor deposition

Applied physics letters, 2007-01, Vol.90 (1), p.012111-012111-3

2007

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Erratum: “Identification of acceptor states in Li -doped p -type ZnO thin films” [Appl. Phys. Lett. 89, 042106 (2006)]

Applied physics letters, 2006-09, Vol.89 (12), p.129901-129901-1

2006

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ZnO light-emitting diodes fabricated on Si substrateswith homobuffer layers

Applied physics letters, 2007-09, Vol.91 (11), p.113503-113503-3

2007

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Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films

Applied physics letters, 2008-01, Vol.92 (1)

2008

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Magnetoelectric CoFe2O4–Pb(Zr,Ti)O3 composite thin films derived by a sol-gel process

Applied physics letters, 2005-03, Vol.86 (12)

2005

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Publisher's Note: “Hall voltage reversal and structural phase transition in VO2 thin films” [Appl. Phys Lett. 116, 082106 (2020)]

Applied physics letters, 2020-03, Vol.116 (13)

2020

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Defect states and charge trapping characteristics of HfO{sub 2} films for high performance nonvolatile memory applications

Applied physics letters, 2014-10, Vol.105 (17)

2014

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Resistive switching and conductance quantization in Ag/SiO{sub 2}/indium tin oxide resistive memories

Applied physics letters, 2014-08, Vol.105 (6)

2014

Volltextzugriff (PDF)

Magnetoelectric resonance-bandwidth broadening of Terfenol-D/epoxy-Pb(Zr,Ti)O3 bilayers in parallel and series connections

Applied physics letters, 2005-01, Vol.86 (3)

2005

Volltextzugriff (PDF)

Mn-doped thiolated Au 25 nanoclusters: Atomic configuration, magnetic properties, and a possible high-performance spin filter

Applied physics letters, 2011-04, Vol.98 (14), p.143103-143103-3

2011

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Electron trap memory characteristics of LiNbO 3 film/AlGaN/GaN heterostructure

Applied physics letters, 2010-01, Vol.96 (3), p.032103-032103-3

2010

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Room temperature GaN/AlGaN self-mixing terahertz detector enhancedby resonant antennas

Applied physics letters, 2011-06, Vol.98 (25), p.252103-252103-3

2011

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Tuning the training effect in exchange biased Ni O ∕ Ni bilayers

Applied physics letters, 2008-06, Vol.92 (24), p.243113-243113-3

2008

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Nonlinear transport properties and Joule heating effect in chargeordered LuFe 2 O 4

Applied physics letters, 2011-03, Vol.98 (10), p.102102-102102-3

2011

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Effect of different laser polarization direction on high order harmonic generation of N2 and H2

Applied physics letters, 2006-11, Vol.89 (21)

2006

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Suppression of the current leakage in charge ordered Lu 2 Fe 2 Fe 1 − x Mn x O 7 ( 0 < x ≤ 0.86 )

Applied physics letters, 2009-08, Vol.95 (7), p.072901-072901-3

2009

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Room temperature ferromagnetism and ferroelectricity in cobalt-doped Li Nb O 3 film

Applied physics letters, 2008-07, Vol.92 (26), p.262901-262901-3

2008

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Room temperature ferromagnetism and ferroelectricity in cobalt-doped LiNbO{sub 3} film

Applied physics letters, 2008-06, Vol.92 (26)

2008

Volltextzugriff (PDF)

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ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers

Comment on "Photoluminescence study of Sb-doped p -type ZnO filmsby molecular-beam epitaxy" [ Appl. Phys. Lett. 87 , 252102 ( 2005 ) ]

Erratum: “Rational synthesis and tunable optical properties of quasialigned Zn1-x Mgx nanorods” [Appl. Phys. Lett. 91, 193108 (2007)]

Erratum: "Rational synthesis and tunable optical properties of quasialigned Zn 1 - x Mg x nanorods" [ Appl. Phys. Lett. 91 , 193108 ( 2007 ) ]

Rational synthesis and tunable optical properties of quasialigned Zn 1 − x Mg x O nanorods

Erratum: "ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition" [ Appl. Phys. Lett. 88 , 173506 ( 2006 )]

Room-temperature photoluminescence from Zn O ∕ Zn Mg O multiple quantum wells grown on Si(111) substrates

ZnMgO quantum dots grown by low-pressure metal organic chemicalvapor deposition

Erratum: “Identification of acceptor states in Li -doped p -type ZnO thin films” [Appl. Phys. Lett. 89, 042106 (2006)]

ZnO light-emitting diodes fabricated on Si substrateswith homobuffer layers

Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films

Magnetoelectric CoFe2O4–Pb(Zr,Ti)O3 composite thin films derived by a sol-gel process

Publisher's Note: “Hall voltage reversal and structural phase transition in VO2 thin films” [Appl. Phys Lett. 116, 082106 (2020)]

Defect states and charge trapping characteristics of HfO{sub 2} films for high performance nonvolatile memory applications

Resistive switching and conductance quantization in Ag/SiO{sub 2}/indium tin oxide resistive memories

Magnetoelectric resonance-bandwidth broadening of Terfenol-D/epoxy-Pb(Zr,Ti)O3 bilayers in parallel and series connections

Mn-doped thiolated Au 25 nanoclusters: Atomic configuration, magnetic properties, and a possible high-performance spin filter

Electron trap memory characteristics of LiNbO 3 film/AlGaN/GaN heterostructure

Room temperature GaN/AlGaN self-mixing terahertz detector enhancedby resonant antennas

Tuning the training effect in exchange biased Ni O ∕ Ni bilayers

Nonlinear transport properties and Joule heating effect in chargeordered LuFe 2 O 4

Effect of different laser polarization direction on high order harmonic generation of N2 and H2

Suppression of the current leakage in charge ordered Lu 2 Fe 2 Fe 1 − x Mn x O 7 ( 0 < x ≤ 0.86 )

Room temperature ferromagnetism and ferroelectricity in cobalt-doped Li Nb O 3 film

Room temperature ferromagnetism and ferroelectricity in cobalt-doped LiNbO{sub 3} film

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