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Dopant source choice for formation of p -type ZnO: Li acceptor

Applied physics letters, 2006-02, Vol.88 (6), p.062107-062107-3

2006

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Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Effect of electric-field on the perpendicular magnetic anisotropy and strain properties in CoFeB/MgO magnetic tunnel junctions

Applied physics letters, 2014-08, Vol.105 (5)

2014

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Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

Applied physics letters, 2015-02, Vol.106 (8)

2015

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Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure

Applied physics letters, 2010-08, Vol.97 (6), p.062103-062103-3

2010

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Control of p - and n -type conductivities in Li-doped ZnO thin films

Applied physics letters, 2006-09, Vol.89 (11), p.112113-112113-3

2006

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Identification of acceptor states in Li-doped p -type ZnO thin films

Applied physics letters, 2006-07, Vol.89 (4), p.042106-042106-3

2006

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Theoretical study of polarization-doped GaN-based light-emitting diodes

Applied physics letters, 2011-03, Vol.98 (10), p.101110-101110-3

2011

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Improving lateral resolution of electrostatic force microscopy by multifrequency method under ambient conditions

Applied physics letters, 2009-06, Vol.94 (22), p.223109-223109-3

2009

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Room-temperature photoluminescence from ZnO∕ZnMgO multiple quantum wells grown on Si(111) substrates

Applied physics letters, 2007-07, Vol.91 (2)

2007

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Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation

Applied physics letters, 2002-08, Vol.81 (7), p.1344-1346

2002

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Experimental verification on the origin of plateau-like current–voltage characteristics of resonant tunneling diodes

Applied physics letters, 2004-03, Vol.84 (11), p.1961-1963

2004

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Effects of external magnetic field on the morphology and magnetic property of BiFeO3 particles prepared by hydrothermal synthesis

Applied physics letters, 2013-02, Vol.102 (8)

2013

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Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition

Applied physics letters, 2011-06, Vol.98 (24), p.241111-241111-3

2011

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ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers

Applied physics letters, 2007-09, Vol.91 (11)

2007

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Significant influence of film thickness on the percolation threshold of multiwall carbon nanotube/low density polyethylene composite films

Applied physics letters, 2009-01, Vol.94 (1), p.012904-012904-3

2009

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p -type behavior in nominally undoped ZnO thin films by oxygen plasma growth

Applied physics letters, 2006-06, Vol.88 (26), p.262103-262103-3

2006

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Comment on “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy” [Appl. Phys. Lett. 87, 252102 (2005)]

Applied physics letters, 2007-03, Vol.90 (11)

2007

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Perovskite LaBaCo2O5+δ (LBCO) single-crystal thin films for pressure sensing applications

Applied physics letters, 2018-04, Vol.112 (17)

2018

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Electrical characterization of ZnO-based homojunctions

Applied physics letters, 2006-07, Vol.89 (5), p.053501-053501-3

2006

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Deep-ultraviolet emission from an InGaAs semiconductor laser

Applied physics letters, 2004-04, Vol.84 (16), p.3007-3009

2004

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Plasma confinement by hemispherical cavity in laser-induced breakdown spectroscopy

Applied physics letters, 2011-03, Vol.98 (13), p.131501-131501-3

2011

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On the effect of impurities in metallic glass formation

Applied physics letters, 2010-04, Vol.96 (14), p.141901-141901-3

2010

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Zero-dimensional field emitter based on ZnO quantum dots

Applied physics letters, 2010-10, Vol.97 (14), p.143102-143102-3

2010

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Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Applied physics letters, 1998-12, Vol.73 (25), p.3706-3708

1998

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Dopant source choice for formation of p -type ZnO: Li acceptor

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

Effect of electric-field on the perpendicular magnetic anisotropy and strain properties in CoFeB/MgO magnetic tunnel junctions

Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure

Control of p - and n -type conductivities in Li-doped ZnO thin films

Identification of acceptor states in Li-doped p -type ZnO thin films

Theoretical study of polarization-doped GaN-based light-emitting diodes

Improving lateral resolution of electrostatic force microscopy by multifrequency method under ambient conditions

Room-temperature photoluminescence from ZnO∕ZnMgO multiple quantum wells grown on Si(111) substrates

Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation

Experimental verification on the origin of plateau-like current–voltage characteristics of resonant tunneling diodes

Effects of external magnetic field on the morphology and magnetic property of BiFeO3 particles prepared by hydrothermal synthesis

Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition

ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers

Significant influence of film thickness on the percolation threshold of multiwall carbon nanotube/low density polyethylene composite films

p -type behavior in nominally undoped ZnO thin films by oxygen plasma growth

Comment on “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy” [Appl. Phys. Lett. 87, 252102 (2005)]

Perovskite LaBaCo2O5+δ (LBCO) single-crystal thin films for pressure sensing applications

Electrical characterization of ZnO-based homojunctions

Deep-ultraviolet emission from an InGaAs semiconductor laser

Plasma confinement by hemispherical cavity in laser-induced breakdown spectroscopy

On the effect of impurities in metallic glass formation

Zero-dimensional field emitter based on ZnO quantum dots

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

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