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Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors

Journal of crystal growth, 2013-09, Vol.379, p.46-56

2013

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Oxygen concentration dependence of as-grown defect formation in nitrogen-doped Czochralski silicon single crystals

Journal of crystal growth, 2021-09, Vol.570, p.126236, Article 126236

2021

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Measurement and evaluation of the defects in Cd1−xZnxTe materials by observing their etch pits in real time

Journal of crystal growth, 2019-01, Vol.506, p.1-7

2019

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Two-dimensional distribution of vacancy concentration at cross points for the ingot length and the temperature gradients to largely reduce point defects and the growth of a dislocation-free NOC ingot for evaluation of its quality

Journal of crystal growth, 2022-08, Vol.592, p.126721, Article 126721

2022

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Luminescence and Raman spectroscopic properties of cubic boron nitride grown by drop-casting technique

Journal of crystal growth, 2022-09, Vol.593, p.126781, Article 126781

2022

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Complexation in germanium in accordance with Vlasov's model for solids

Journal of crystal growth, 2020-12, Vol.552, p.125928, Article 125928

2020

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Characterization of the carrot defect in 4H-SiC epitaxial layers

Journal of crystal growth, 2010-05, Vol.312 (11), p.1828-1837

2010

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Laser floating zone growth of SrVO3 single crystals

Journal of crystal growth, 2022-04, Vol.583, p.126518, Article 126518

2022

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Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals

Journal of crystal growth, 2019-06, Vol.516, p.51-56

2019

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Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography

Journal of crystal growth, 2018-10, Vol.499, p.24-29

2018

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Impact of grain boundary structures on trapping iron

Journal of crystal growth, 2017-06, Vol.468, p.448-451

2017

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Voids in silicon as a sink for interstitial iron: a density functional study

Journal of crystal growth, 2017-06, Vol.468, p.101-103

2017

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The effects of surface treatments of the substrates on high-quality GaN crystal growth

Journal of crystal growth, 2013-06, Vol.372, p.73-77

2013

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Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique

Journal of crystal growth, 2017-06, Vol.468, p.889-893

2017

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Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation

Journal of crystal growth, 2017-06, Vol.468, p.536-540

2017

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Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon

Journal of crystal growth, 2017-06, Vol.468, p.424-432

2017

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Characterization of defects in Tb3Ga5O12 single crystals grown by the Czochralski method

Journal of crystal growth, 2024-05, Vol.634, p.127687, Article 127687

2024

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Wet etching of GaN, AlN, and SiC: a review

Materials science & engineering. R, Reports : a review journal, 2005-01, Vol.48 (1), p.1-46

2005

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Optical and electrical properties of dislocations in plastically deformed GaN

Journal of crystal growth, 2014-10, Vol.403, p.72-76

2014

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Effect of the N-doping concentration on the formation of the wide carrot defect in 4H-SiC homoepitaxial layer grown by trichlorosilane (TCS) as silicon precursor

Materials science in semiconductor processing, 2025-01, Vol.185, p.108962, Article 108962

2025

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Mass transfer and formation of micro-inclusions in Ti-sapphire grown by the HDC method

Journal of crystal growth, 2024-10, Vol.643, p.127820, Article 127820

2024

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Effects of solidification defects on nanoscale mechanical properties of rapid directionally solidified Al-Cu Alloy: A large scale molecular dynamics study

Journal of crystal growth, 2019-12, Vol.527, p.125255, Article 125255

2019

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Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops

Journal of crystal growth, 2016-11, Vol.453, p.173-179

2016

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Analysis of the formation of interweaved strips in cast quasi-single crystal silicon ingots

Journal of crystal growth, 2023-11, Vol.622, p.127401, Article 127401

2023

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Collective formation of misfit dislocations at the critical thickness for equilibrium nanowire heterostructures

Journal of crystal growth, 2023-11, Vol.622, p.127400, Article 127400

2023

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Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors

Oxygen concentration dependence of as-grown defect formation in nitrogen-doped Czochralski silicon single crystals

Measurement and evaluation of the defects in Cd1−xZnxTe materials by observing their etch pits in real time

Two-dimensional distribution of vacancy concentration at cross points for the ingot length and the temperature gradients to largely reduce point defects and the growth of a dislocation-free NOC ingot for evaluation of its quality

Luminescence and Raman spectroscopic properties of cubic boron nitride grown by drop-casting technique

Complexation in germanium in accordance with Vlasov's model for solids

Characterization of the carrot defect in 4H-SiC epitaxial layers

Laser floating zone growth of SrVO3 single crystals

Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals

Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography

Impact of grain boundary structures on trapping iron

Voids in silicon as a sink for interstitial iron: a density functional study

The effects of surface treatments of the substrates on high-quality GaN crystal growth

Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique

Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation

Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon

Characterization of defects in Tb3Ga5O12 single crystals grown by the Czochralski method

Wet etching of GaN, AlN, and SiC: a review

Optical and electrical properties of dislocations in plastically deformed GaN

Effect of the N-doping concentration on the formation of the wide carrot defect in 4H-SiC homoepitaxial layer grown by trichlorosilane (TCS) as silicon precursor

Mass transfer and formation of micro-inclusions in Ti-sapphire grown by the HDC method

Effects of solidification defects on nanoscale mechanical properties of rapid directionally solidified Al-Cu Alloy: A large scale molecular dynamics study

Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops

Analysis of the formation of interweaved strips in cast quasi-single crystal silicon ingots

Collective formation of misfit dislocations at the critical thickness for equilibrium nanowire heterostructures

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