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A 0.0043-mm 2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R- RC Network

IEEE transactions on very large scale integration (VLSI) systems, 2023-08, Vol.31 (8), p.1248-1252

2023

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A 0.0043-mm2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R-RC Network

IEEE transactions on very large scale integration (VLSI) systems, 2023-08, Vol.31 (8), p.1248-1252

2023

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A 0.016mm 2 Active Area 4GHz Fully Ring-Oscillator-Based Cascaded Fractional-N PLL With Burst-Mode Sampling

IEEE transactions on circuits and systems. II, Express briefs, 2023-10, Vol.70 (10), p.3792-3796

2023

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A 0.016mm2 Active Area 4GHz Fully Ring-Oscillator-based Cascaded Fractional-N PLL with Burst-Mode Sampling

IEEE transactions on circuits and systems. II, Express briefs, 2023-10, Vol.70 (10), p.1-1

2023

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A 0.1-to-4.3-GHz Variable-Gain Balun LNA With Dual-Path Noise-Canceling Technique

IEEE transactions on microwave theory and techniques, 2024-08, p.1-9

2024

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0.15 /spl mu/m PHEMT 80 Gb/s selector

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004, 2004, Vol.3, p.2246-2248 vol.3

2004

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0.2-4.0 THz broadband terahertz detector based on antenna-coupled AlGaN/GaN HEMTs arrayed in a bow-tie pattern

Optics express, 2023-03, Vol.31 (6), p.10720-10731

2023

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0.3～3.5GHz混合连续类功率放大器的设计

电子与信息学报, 2021, Vol.43 (4), p.1106-1111

2021

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0.3 VT/1.1 kV AlGaN/GaN lateral power diode with MIS-gated hybrid anode on silicon substrate

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016, p.1041-1043

2016

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0.32 THz dual circularly polarized reflectarray

2020 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2020, p.1-2

2020

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A 0.35 V 376 Mb/s Configurable Long Integer Multiplier for Subthreshold Encryption

IEEE transactions on circuits and systems. II, Express briefs, 2018-10, Vol.65 (10), p.1430-1434

2018

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A 0.45-V, 14.6-nW CMOS Subthreshold Voltage Reference With No Resistors and No BJTs

IEEE transactions on circuits and systems. II, Express briefs, 2015-07, Vol.62 (7), p.621-625

2015

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A 0.45 V, 15.6 nW MOSFET-only sub-threshold voltage reference with no amplifiers

2015 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2015, p.1-4

2015

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A 0.5 V, 40nW voltage reference for WBAN devices

2016 IEEE Biomedical Circuits and Systems Conference (BioCAS), 2016, p.504-507

2016

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A 0.61-μW Fully Integrated Keyword-Spotting ASIC With Real-Point Serial FFT-Based MFCC and Temporal Depthwise Separable CNN

IEEE journal of solid-state circuits, 2024-03, Vol.59 (3), p.867-877

2024

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0.78BiTi 0.1 Fe 0.8 Mg 0.1 O 3 -0.22CaTiO 3 Nanoscale-Thick Thin Films for Doping-Enhanced Electric Applications

ACS applied nano materials, 2023-05, Vol.6 (9), p.7562-7571

2023

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0.78BiTi0.1Fe0.8Mg0.1O3‑0.22CaTiO3 Nanoscale-Thick Thin Films for Doping-Enhanced Electric Applications

ACS applied nano materials, 2023-05, Vol.6 (9), p.7562-7571

2023

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A 0.8 V low-power CMOS PTAT voltage reference

Proceedings of 2005 IEEE International Workshop on VLSI Design and Video Technology, 2005, 2005, p.1-5

2005

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0.9-A/mm, 2.6-V Flash-Like Normally-Off Al 2 O 3 /AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

IEEE electron device letters, 2018-03, Vol.39 (3), p.397-400

2018

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0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

IEEE electron device letters, 2018-03, Vol.39 (3), p.397-400

2018

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A 0.9 V 2.72 µW 200 kS/s SAR ADC with ladder-based time-domain comparator

IEICE Electronics Express, 2017, Vol.14 (5), p.20170003-20170003

2017

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A [001]‐Oriented Hittorf's Phosphorus Nanorods/Polymeric Carbon Nitride Heterostructure for Boosting Wide‐Spectrum‐Responsive Photocatalytic Hydrogen Evolution from Pure Water

Angewandte Chemie, 2020-01, Vol.132 (2), p.878-883

2020

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A [001]‐Oriented Hittorf's Phosphorus Nanorods/Polymeric Carbon Nitride Heterostructure for Boosting Wide‐Spectrum‐Responsive Photocatalytic Hydrogen Evolution from Pure Water

Angewandte Chemie International Edition, 2020-01, Vol.59 (2), p.868-873

International ed. in English, 2020

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007 - Association of accelerometer-measured physical activity patterns with cardiovascular diseases and mortality in people with osteoarthritis: a prospective cohort study

Osteoarthritis and cartilage, 2024-04, Vol.32, p.S10-S11

2024

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0145 The Acute Effects of Intermittent Light Exposure in The Evening on Alertness and Subsequent Sleep Architecture

Sleep (New York, N.Y.), 2018-04, Vol.41 (suppl_1), p.A56-A57

2018

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A 0.0043-mm 2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R- RC Network

A 0.0043-mm2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R-RC Network

A 0.016mm 2 Active Area 4GHz Fully Ring-Oscillator-Based Cascaded Fractional-N PLL With Burst-Mode Sampling

A 0.016mm2 Active Area 4GHz Fully Ring-Oscillator-based Cascaded Fractional-N PLL with Burst-Mode Sampling

A 0.1-to-4.3-GHz Variable-Gain Balun LNA With Dual-Path Noise-Canceling Technique

0.15 /spl mu/m PHEMT 80 Gb/s selector

0.2-4.0 THz broadband terahertz detector based on antenna-coupled AlGaN/GaN HEMTs arrayed in a bow-tie pattern

0.3～3.5GHz混合连续类功率放大器的设计

0.3 VT/1.1 kV AlGaN/GaN lateral power diode with MIS-gated hybrid anode on silicon substrate

0.32 THz dual circularly polarized reflectarray

A 0.35 V 376 Mb/s Configurable Long Integer Multiplier for Subthreshold Encryption

A 0.45-V, 14.6-nW CMOS Subthreshold Voltage Reference With No Resistors and No BJTs

A 0.45 V, 15.6 nW MOSFET-only sub-threshold voltage reference with no amplifiers

A 0.5 V, 40nW voltage reference for WBAN devices

A 0.61-μW Fully Integrated Keyword-Spotting ASIC With Real-Point Serial FFT-Based MFCC and Temporal Depthwise Separable CNN

0.78BiTi 0.1 Fe 0.8 Mg 0.1 O 3 -0.22CaTiO 3 Nanoscale-Thick Thin Films for Doping-Enhanced Electric Applications

0.78BiTi0.1Fe0.8Mg0.1O3‑0.22CaTiO3 Nanoscale-Thick Thin Films for Doping-Enhanced Electric Applications

A 0.8 V low-power CMOS PTAT voltage reference

0.9-A/mm, 2.6-V Flash-Like Normally-Off Al 2 O 3 /AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

A 0.9 V 2.72 µW 200 kS/s SAR ADC with ladder-based time-domain comparator

A [001]‐Oriented Hittorf's Phosphorus Nanorods/Polymeric Carbon Nitride Heterostructure for Boosting Wide‐Spectrum‐Responsive Photocatalytic Hydrogen Evolution from Pure Water

A [001]‐Oriented Hittorf's Phosphorus Nanorods/Polymeric Carbon Nitride Heterostructure for Boosting Wide‐Spectrum‐Responsive Photocatalytic Hydrogen Evolution from Pure Water

007 - Association of accelerometer-measured physical activity patterns with cardiovascular diseases and mortality in people with osteoarthritis: a prospective cohort study

0145 The Acute Effects of Intermittent Light Exposure in The Evening on Alertness and Subsequent Sleep Architecture

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