UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

Optics express, 2014-01, Vol.22 (1), p.399-410

2014

Volltextzugriff (PDF)

Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Journal of applied physics, 2013-01, Vol.113 (1)

2013

Volltextzugriff (PDF)

Tensile-strained germanium microdisks

Applied physics letters, 2013-06, Vol.102 (22)

2013

Volltextzugriff (PDF)

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

Applied physics letters, 2014-07, Vol.105 (1)

2014

Volltextzugriff (PDF)

Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy

Journal of applied physics, 2013-08, Vol.114 (8)

2013

Volltextzugriff (PDF)

Tensile-strained germanium microdisks with circular Bragg reflectors

Applied physics letters, 2016-02, Vol.108 (9)

2016

Volltextzugriff (PDF)

Control of tensile strain in germanium waveguides through silicon nitride layers

Applied physics letters, 2012-05, Vol.100 (20), p.201104-201104-4

2012

Volltextzugriff (PDF)

The efficiency of carbon adsorption as a diffusion barrier in Ge/Si heterostructures

Physica scripta, 2019-08, Vol.94 (8), p.85803

2019

Volltextzugriff (PDF)

Tensile-strained germanium microdisk electroluminescence

Optics express, 2015-03, Vol.23 (5), p.6722-6730

2015

Volltextzugriff (PDF)

Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

Thin solid films, 2014-04, Vol.557, p.70-75

2014

Volltextzugriff (PDF)

Porosity: Process, Technologies and Applications

Hcine Ghrib, Taher

2018

Volltextzugriff (PDF)

Light emission from strained germanium

Nature photonics, 2013-03, Vol.7 (3), p.162-162

2013

Volltextzugriff (PDF)

Schottky electroluminescent diodes with n-doped germanium

Applied physics letters, 2014-06, Vol.104 (24)

2014

Volltextzugriff (PDF)

Effective thermal resistance of a photonic crystal microcavity

Optics letters, 2014-02, Vol.39 (3), p.458

2014

Volltextzugriff (PDF)

New Tribological Ways

2011

Volltextzugriff (PDF)

Phosboucraa desalination plant for the phosphate industry — optimization of process unit and RO performance

Desalination and water treatment, 2010-06, Vol.18 (1-3), p.151-156

2010

Volltextzugriff (PDF)

Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD

International journal of photoenergy, 2012-01, Vol.2012 (2012), p.1-5

2012

Volltextzugriff (PDF)

Recent advances in germanium emission [Invited]

Photonics research (Washington, DC), 2013-10, Vol.1 (3), p.102

2013

Volltextzugriff (PDF)

Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers

Journal of applied physics, 2013-05, Vol.113 (18)

2013

Volltextzugriff (PDF)

(Invited) Direct Band Gap Germanium

ECS transactions, 2016, Vol.75 (8), p.177-184

2016

Volltextzugriff (PDF)

Making germanium, an indirect band gap semiconductor, suitable for light-emitting devices

Advances in natural sciences. Nanoscience and nanotechnology, 2015-03, Vol.6 (1), p.15013-5

2015

Volltextzugriff (PDF)

Highly-Doped, Highly-Strained Germanium and Schottky Electroluminescent Diodes

ECS transactions, 2014, Vol.64 (6), p.359-364

2014

Volltextzugriff (PDF)

(Invited) Strain Engineering for Optical Gain in Germanium

ECS transactions, 2013, Vol.50 (9), p.363-370

2013

Volltextzugriff (PDF)

Direct band gap germanium in high Q-factor cavities

2016 IEEE 13th International Conference on Group IV Photonics (GFP), 2016, p.38-39

2016

Volltextzugriff (PDF)

Pronounced enhancement of the photoluminescence intensity in tensile-strained and heavily n-doped (4×1019 at.cm−3) Ge/Si epilayers

11th International Conference on Group IV Photonics (GFP), 2014, p.225-226

2014

Volltextzugriff (PDF)

1 – 25 von 238

Suche als RSS-Feed

Aktive Filter

KollektionSpringerLINK Contemporary (Konsortium Baden-Württemberg)

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(189)
Mit Volltextzugriff
(192)

Publikationsform

Sprache

Englisch
(219)
Französisch
(21)

Erscheinungsjahr

n.n

Thema

Science & Technology
(152)
Technology
(95)
Physical Sciences
(80)
Engineering
(55)
Physics
(54)
Materials Science
(49)
Materials Science, Multidisciplinary
(35)
Physics, Applied
(26)
Chemistry
(25)
Engineering, Civil
(23)
Chemistry, Physical
(20)
Physics, Condensed Matter
(20)
Life Sciences & Biomedicine
(17)
Engineering, Mechanical
(16)
Exact Sciences And Technology
(16)
Photoluminescence
(16)
Optical Properties
(14)
Optics
(14)
Cables
(12)
Thin Films
(12)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Tensile-strained germanium microdisks

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy

Tensile-strained germanium microdisks with circular Bragg reflectors

Control of tensile strain in germanium waveguides through silicon nitride layers

The efficiency of carbon adsorption as a diffusion barrier in Ge/Si heterostructures

Tensile-strained germanium microdisk electroluminescence

Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

Porosity: Process, Technologies and Applications

Light emission from strained germanium

Schottky electroluminescent diodes with n-doped germanium

Effective thermal resistance of a photonic crystal microcavity

New Tribological Ways

Phosboucraa desalination plant for the phosphate industry — optimization of process unit and RO performance

Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD

Recent advances in germanium emission [Invited]

Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers

(Invited) Direct Band Gap Germanium

Making germanium, an indirect band gap semiconductor, suitable for light-emitting devices

Highly-Doped, Highly-Strained Germanium and Schottky Electroluminescent Diodes

(Invited) Strain Engineering for Optical Gain in Germanium

Direct band gap germanium in high Q-factor cavities

Pronounced enhancement of the photoluminescence intensity in tensile-strained and heavily n-doped (4×1019 at.cm−3) Ge/Si epilayers

Aktive Filter

Suchergebnisse filtern