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0.15 μm gate length MHEMT technology for 77GHz automotive radar applications

2004

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0.15 /spl mu/m gate length InAlAs/InGaAs power metamorphic HEMT on GaAs substrate with extremely low noise characteristics

International Conference onIndium Phosphide and Related Materials, 2003, 2003, p.114-117

2003

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0.15 /spl mu/m gate length MHEMT technology for 77 GHz automotive radar applications

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.24-27

2004

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0.8 mu m CMOS analog front-end processor for 4X speed CD-ROM

IEEE transactions on consumer electronics, 1996-08, Vol.42 (3), p.826-831

1996

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0.8 mum CMOS analog front-end processor for 4x speed CD-ROM

IEEE transactions on consumer electronics, 1996-08, Vol.42 (3), p.826-831

1996

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0.8 /spl mu/m CMOS analog front-end processor for 4/spl times/ speed CD-ROM

IEEE transactions on consumer electronics, 1996-08, Vol.42 (3), p.826-831

1996

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A 1.2 V 8 Gb 8-Channel 128 GB/s High-Bandwidth Memory (HBM) Stacked DRAM With Effective I/O Test Circuits

IEEE journal of solid-state circuits, 2015-01, Vol.50 (1), p.191-203

2015

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A 1.2V 64Gb 341GB/S HBM2 stacked DRAM with spiral point-to-point TSV structure and improved bank group data control

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.208-210

2018

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A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor

IEEE journal of solid-state circuits, 2003-04, Vol.38 (4), p.631-640

2003

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(1-x)(PbMgNbO sub(3)-PbZrTiO sub(3)) -x(BaTiO sub(3)) Piezoelectric Ceramics

Ferroelectrics, 2013-01, Vol.451 (1), p.1-8

2013

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(1-x)(PbMgNbO3-PbZrTiO3)-x(BaTiO3) Piezoelectric Ceramics

Ferroelectrics, 2013-01, Vol.451 (1), p.1-8

2013

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1-치환-2-(n-octyl)-3,3-diisopropylpseudothiourea 유도체의 살충활성에 미치는 1-치환 imino group의 영향

농약과학회지, 1997, Vol.1, p.1-6

1997

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IL‐10‐induced modulation of macrophage polarization suppresses outer‐blood‐retinal barrier disruption in the streptozotocin‐induced early diabetic retinopathy mouse model

The FASEB journal, 2024-05, Vol.38 (9), p.e23638-n/a

2024

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101: Clinical Outcome of Acute Prostatitis, a Multicenter Study

The Journal of urology, 2005-04, Vol.173 (4), p.28-28

2005

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1080. Changing Epidemiology and Long-Term Outcome of Bloodstream Infection Due to Enterococcus for Patients with Acute Leukemia: Impacts and Limitations on Strategy of Restricting Antibiotics

Open forum infectious diseases, 2020-12, Vol.7 (Supplement_1), p.S568-S569

2020

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A 12-bit 10GS/s 16-Channel Time-Interleaved ADC with a Digital Processing Timing-Skew Background Calibration in 5nm FinFET

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.172-173

2022

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124 : Microtubule Stability is Associated with the Functional Activity of Mitochondria for the Mouse Preimplantation Embryo Development

Fertility & reproduction, 2023-12, Vol.5 (4), p.317-317

2023

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A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

IEEE journal of solid-state circuits, 2016-01, Vol.51 (1), p.204-212

2016

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13.2 A 32Gb 8.0Gb/s/pin DDR5 SDRAM with a Symmetric-Mosaic Architecture in a 5th-Generation 10nm DRAM Process

2024 IEEE International Solid-State Circuits Conference (ISSCC), 2024, Vol.67, p.234-236

2024

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142

Cytokine (Philadelphia, Pa.), 2014-11, Vol.70 (1), p.62

2014

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142: Therapeutic peptides from IK cytokine ameliorate rheumatoid arthritis through the suppression of macrophage activation as well as TH and TH7 cell differentiation

Cytokine (Philadelphia, Pa.), 2014-11, Vol.70 (1), p.62-62

2014

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154 kV급 고온초전도 케이블 및 단말의 전기절연 설계

한국초전도.저온논문지, 2007, 9(1), , pp.61-66

2007

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154kV급 고온초전도 전력케이블의 전기절연 설계

한국초전도.저온논문지, 2006, 8(1), , pp.29-33

2006

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A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking

IEEE journal of solid-state circuits, 2019-01, Vol.54 (1), p.197-209

2019

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A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme

IEEE journal of solid-state circuits, 2021-01, Vol.56 (1), p.199-211

2021

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0.15 μm gate length MHEMT technology for 77GHz automotive radar applications

0.15 /spl mu/m gate length InAlAs/InGaAs power metamorphic HEMT on GaAs substrate with extremely low noise characteristics

0.15 /spl mu/m gate length MHEMT technology for 77 GHz automotive radar applications

0.8 mu m CMOS analog front-end processor for 4X speed CD-ROM

0.8 mum CMOS analog front-end processor for 4x speed CD-ROM

0.8 /spl mu/m CMOS analog front-end processor for 4/spl times/ speed CD-ROM

A 1.2 V 8 Gb 8-Channel 128 GB/s High-Bandwidth Memory (HBM) Stacked DRAM With Effective I/O Test Circuits

A 1.2V 64Gb 341GB/S HBM2 stacked DRAM with spiral point-to-point TSV structure and improved bank group data control

A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor

(1-x)(PbMgNbO sub(3)-PbZrTiO sub(3)) -x(BaTiO sub(3)) Piezoelectric Ceramics

(1-x)(PbMgNbO3-PbZrTiO3)-x(BaTiO3) Piezoelectric Ceramics

1-치환-2-(n-octyl)-3,3-diisopropylpseudothiourea 유도체의 살충활성에 미치는 1-치환 imino group의 영향

IL‐10‐induced modulation of macrophage polarization suppresses outer‐blood‐retinal barrier disruption in the streptozotocin‐induced early diabetic retinopathy mouse model

101: Clinical Outcome of Acute Prostatitis, a Multicenter Study

1080. Changing Epidemiology and Long-Term Outcome of Bloodstream Infection Due to Enterococcus for Patients with Acute Leukemia: Impacts and Limitations on Strategy of Restricting Antibiotics

A 12-bit 10GS/s 16-Channel Time-Interleaved ADC with a Digital Processing Timing-Skew Background Calibration in 5nm FinFET

124 : Microtubule Stability is Associated with the Functional Activity of Mitochondria for the Mouse Preimplantation Embryo Development

A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

13.2 A 32Gb 8.0Gb/s/pin DDR5 SDRAM with a Symmetric-Mosaic Architecture in a 5th-Generation 10nm DRAM Process

142

142: Therapeutic peptides from IK cytokine ameliorate rheumatoid arthritis through the suppression of macrophage activation as well as TH and TH7 cell differentiation

154 kV급 고온초전도 케이블 및 단말의 전기절연 설계

154kV급 고온초전도 전력케이블의 전기절연 설계

A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking

A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme

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