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Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure

2017-03

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Large electrocaloric effect over a wide temperature range in BaTiO 3 -modified lead-free ceramics

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-01, Vol.7 (5), p.1353-1358

2019

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Synapse behavior characterization and physical mechanism of a TiN/SiOx/p-Si tunneling memristor device

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-01, Vol.7 (6), p.1561-1567

2019

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Synapse behavior characterization and physical mechanism of a TiN/SiO x /p-Si tunneling memristor device

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-02, Vol.7 (6), p.1561-1567

2019

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An electronic synapse memristor device with conductance linearity using quantized conduction for neuroinspired computing

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019, Vol.7 (5), p.1298-1306

2019

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Large electrocaloric effect over a wide temperature range in BaTiO3-modified lead-free ceramics

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-01, Vol.7 (5), p.1353-1358

2019

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Memristors based on multilayer graphene electrodes for implementing a low-power neuromorphic electronic synapse

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-04, Vol.8 (14), p.4926-4933

2020

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Liquid phase exfoliation of bismuth nanosheets for flexible all-solid-state supercapacitors with high energy density

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-09, Vol.8 (35), p.12314-12322

2020

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Surface passivation by congeneric quantum dots for high-performance and stable CsPbBr3-based photodetectors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-08, Vol.9 (31), p.10089-10100

2021

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Memristors mimicking the regulation of synaptic plasticity and the refractory period in the phenomenological model

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-04, Vol.8 (15), p.5183-519

2020

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Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO 2 /p-Si tunneling junction structure

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (9), p.2259-2267

2017

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Surface passivation by congeneric quantum dots for high-performance and stable CsPbBr 3 -based photodetectors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-08, Vol.9 (31), p.10089-10100

2021

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Surface passivation by congeneric quantum dots for high-performance and stable CsPbBr-based photodetectors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-08, Vol.9 (31), p.189-11

2021

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Highly improved performance in Zr 0.5 Hf 0.5 O 2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (42), p.11046-11052

2017

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Ultrahigh ferroelectric response in Fe modified 0.95(Na sub(1/2)Bi sub(1/2))TiO sub(3)-0.05BaTiO sub(3) single crystals

Journal of materials chemistry. C, Materials for optical and electronic devices, 2014-11, Vol.2 (47), p.10124-10128

2014

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Ultrahigh ferroelectric response in Fe modified 0.95(Na 1/2 Bi 1/2 )TiO 3 -0.05BaTiO 3 single crystals

Journal of materials chemistry. C, Materials for optical and electronic devices, 2014, Vol.2 (47), p.10124-10128

2014

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Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure

Large electrocaloric effect over a wide temperature range in BaTiO 3 -modified lead-free ceramics

Synapse behavior characterization and physical mechanism of a TiN/SiOx/p-Si tunneling memristor device

Synapse behavior characterization and physical mechanism of a TiN/SiO x /p-Si tunneling memristor device

An electronic synapse memristor device with conductance linearity using quantized conduction for neuroinspired computing

Large electrocaloric effect over a wide temperature range in BaTiO3-modified lead-free ceramics

Memristors based on multilayer graphene electrodes for implementing a low-power neuromorphic electronic synapse

Liquid phase exfoliation of bismuth nanosheets for flexible all-solid-state supercapacitors with high energy density

Surface passivation by congeneric quantum dots for high-performance and stable CsPbBr3-based photodetectors

Memristors mimicking the regulation of synaptic plasticity and the refractory period in the phenomenological model

Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO 2 /p-Si tunneling junction structure

Surface passivation by congeneric quantum dots for high-performance and stable CsPbBr 3 -based photodetectors

Surface passivation by congeneric quantum dots for high-performance and stable CsPbBr-based photodetectors

Highly improved performance in Zr 0.5 Hf 0.5 O 2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory

Ultrahigh ferroelectric response in Fe modified 0.95(Na sub(1/2)Bi sub(1/2))TiO sub(3)-0.05BaTiO sub(3) single crystals

Ultrahigh ferroelectric response in Fe modified 0.95(Na 1/2 Bi 1/2 )TiO 3 -0.05BaTiO 3 single crystals

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