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Radiopulse generation in dispersive nonlinear transmission lines with GaAs S-diodes

Journal of physics. Conference series, 2021-11, Vol.2094 (2), p.22065

2021

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The influence of the deep level type on a switching time delay of GaAs avalanche S-diodes

Journal of physics. Conference series, 2018-12, Vol.1124 (7), p.71013

2018

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Resonant tunneling of charge carriers in InGaN/GaN superlattice

Journal of physics. Conference series, 2017-06, Vol.864 (1), p.12052

2017

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Comparative analysis of efficiency droop in InGaN/GaN light- emitting diodes for electrical and optical pumping conditions

Journal of physics. Conference series, 2014-01, Vol.541 (1), p.12055-4

2014

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Study of electric field distribution in AlGalnP light-emitting diode by Kelvin probe force microscopy

Journal of physics. Conference series, 2014-10, Vol.541 (1), p.12057

2014

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Study of electric field distribution in AlGaInP light-emitting diode by Kelvin probe force microscopy

Journal of physics. Conference series, 2014, Vol.541, p.1-4

2014

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Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells

Journal of physics. Conference series, 2014-01, Vol.541 (1), p.12083-4

2014

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Photoelectrical characteristics of TiO 2 ‐N‐SI heterostructures

Microwave and optical technology letters, 2016-05, Vol.58 (5), p.1113-1116

2016

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Photoelectrical characteristics of Ga 2 O 3 -GaAs structures

Journal of physics. Conference series, 2014-10, Vol.541, p.12029

2014

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ChemInform Abstract: Gallium Nitride as a Material for Spintronics

ChemInform, 2013-11, Vol.44 (47), p.no-no

2013

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Application of laser module with driver based on avalanche S-diode for light-emitting diode structure characterization

2015 International Siberian Conference on Control and Communications (SIBCON), 2015, p.1-4

2015

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The optical properties of 9 MeV electron irradiated GaSe crystals

2015 International Siberian Conference on Control and Communications (SIBCON), 2015, p.1-3

2015

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Switching delay of avalanche S-diodes in circuit with optical drive

2011 International Siberian Conference on Control and Communications (SIBCON), 2011, p.265-266

2011

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S-diode with optical control

2009 International Siberian Conference on Control and Communications, 2009, p.170-173

2009

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Transformation of current-voltage characteristics of GaAs π-ν-n-structures under modification of π-layer resistance

2009 International Siberian Conference on Control and Communications, 2009, p.180-184

2009

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Subnanosecond Optoelectronic Switch

2007 Siberian Conference on Control and Communications, 2007, p.228-230

2007

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Evaluating the Switching Efficiency of Avalanche S-Diodes in a High-Current Mode

IEEE transactions on electron devices, 2024-10, Vol.71 (10), p.5831-5837

2024

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Microplasma Breakdown in GaAs‐Based Avalanche S‐Diodes Doped with Deep Fe Acceptors

physica status solidi (b), 2023-04, Vol.260 (4), p.n/a

2023

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The physical mechanism underpinning superfast switching of GaAs S-diode

Solid state communications, 2023-05, Vol.365, p.115111, Article 115111

2023

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Avalanche Delay and Dynamic Triggering in GaAs-Based S-Diodes Doped With Deep Level Impurity

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.57-65

2021

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Suppression of Dynamic Current Leakage in Avalanche S-Diode Switching Circuits

IEEE electron device letters, 2022-01, Vol.43 (1), p.100-103

2022

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Low-temperature transport of charge carriers in InGaN/GaN multiple quantum well light-emitting diodes

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.930-934

2015

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Subnanosecond switching of standard thyristors triggered in impact-ionization wave mode by a high-voltage PCSS driver

Journal of physics. Conference series, 2021-11, Vol.2064 (1), p.12120

2021

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Electron Irradiation Degradation of AlGaInP/GaAs Light‐Emitting Diodes

Physica status solidi. A, Applications and materials science, 2018-04, Vol.215 (8), p.n/a

2018

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The Mechanism of Superfast Switching of Avalanche -Diodes Based on GaAs Doped With Cr and Fe

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3339-3344

2018

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Radiopulse generation in dispersive nonlinear transmission lines with GaAs S-diodes

The influence of the deep level type on a switching time delay of GaAs avalanche S-diodes

Resonant tunneling of charge carriers in InGaN/GaN superlattice

Comparative analysis of efficiency droop in InGaN/GaN light- emitting diodes for electrical and optical pumping conditions

Study of electric field distribution in AlGalnP light-emitting diode by Kelvin probe force microscopy

Study of electric field distribution in AlGaInP light-emitting diode by Kelvin probe force microscopy

Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells

Photoelectrical characteristics of TiO 2 ‐N‐SI heterostructures

Photoelectrical characteristics of Ga 2 O 3 -GaAs structures

ChemInform Abstract: Gallium Nitride as a Material for Spintronics

Application of laser module with driver based on avalanche S-diode for light-emitting diode structure characterization

The optical properties of 9 MeV electron irradiated GaSe crystals

Switching delay of avalanche S-diodes in circuit with optical drive

S-diode with optical control

Transformation of current-voltage characteristics of GaAs π-ν-n-structures under modification of π-layer resistance

Subnanosecond Optoelectronic Switch

Evaluating the Switching Efficiency of Avalanche S-Diodes in a High-Current Mode

Microplasma Breakdown in GaAs‐Based Avalanche S‐Diodes Doped with Deep Fe Acceptors

The physical mechanism underpinning superfast switching of GaAs S-diode

Avalanche Delay and Dynamic Triggering in GaAs-Based S-Diodes Doped With Deep Level Impurity

Suppression of Dynamic Current Leakage in Avalanche S-Diode Switching Circuits

Low-temperature transport of charge carriers in InGaN/GaN multiple quantum well light-emitting diodes

Subnanosecond switching of standard thyristors triggered in impact-ionization wave mode by a high-voltage PCSS driver

Electron Irradiation Degradation of AlGaInP/GaAs Light‐Emitting Diodes

The Mechanism of Superfast Switching of Avalanche -Diodes Based on GaAs Doped With Cr and Fe

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