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Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm

IEEE journal of quantum electronics, 2021-04, Vol.57 (2), p.1-6

2021

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IEEE_Xplore

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3073-3078

2022

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IEEE_Xplore

Simulation of AlGaN/GaN MISFET With 3.6-GW/cm2 High FOM by SIPOS Field Plates Electric Field Modulation

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.429-434

2023

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IEEE_Xplore

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1120-1126

2022

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IEEE_Xplore

On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3623-3629

2022

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IEEE_Xplore

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.631-636

2022

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IEEE_Xplore

GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art fT × LG Value

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.968-972

2022

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IEEE_Xplore

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

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On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2765-2770

2020

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IEEE_Xplore

T-ZnO/AlGaN/GaN HEMT Uric Acid Sensor-Sensitivity Analysis and Effect of Surface Wettability for Improved Performance

IEEE sensors journal, 2022-06, Vol.22 (12), p.1-1

2022

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IEEE_Xplore

Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

IEEE transactions on nanotechnology, 2020, Vol.19, p.405-409

2020

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IEEE_Xplore

Antigen-Antibody Interaction-Based GaN HEMT Biosensor for C3G Detection

IEEE sensors journal, 2022-04, Vol.22 (7), p.6256-6262

2022

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IEEE_Xplore

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

physica status solidi (b), 2020-12, Vol.257 (12), p.n/a

2020

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Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2544-2550

2019

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IEEE_Xplore

The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

IEEE sensors journal, 2020-08, Vol.20 (16), p.8947-8955

2020

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IEEE_Xplore

Comparative Study on Charge Trapping Induced } Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5343-5349

2018

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IEEE_Xplore

0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

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Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.71-74

2016

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IEEE_Xplore

A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

Journal of the Korean Physical Society, 2019, 74(4), , pp.349-357

2019

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Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4800-4806

2018

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IEEE_Xplore

AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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IEEE_Xplore

Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

IEEE journal of quantum electronics, 2017-02, Vol.53 (1), p.1-6

2017

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IEEE_Xplore

Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.876-882

2019

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IEEE_Xplore

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3848-3854

2018

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Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

Simulation of AlGaN/GaN MISFET With 3.6-GW/cm2 High FOM by SIPOS Field Plates Electric Field Modulation

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art fT × LG Value

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

T-ZnO/AlGaN/GaN HEMT Uric Acid Sensor-Sensitivity Analysis and Effect of Surface Wettability for Improved Performance

Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

Antigen-Antibody Interaction-Based GaN HEMT Biosensor for C3G Detection

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

Comparative Study on Charge Trapping Induced } Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer

Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

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